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Short Channel MOSFET 의 Ⅰ-Ⅴ 특성 해석
박광민 순천향대학교 1988 논문집 Vol.11 No.4
In this paper, including the carrier drift velocity effect and the short channel effect, the I-V characteristics of short channel MOSFET's is analyzed. Introducing the concept of correction factor, errors between simulated results and experimental data existed in previous papers are sufficiently reduced with the precise analysis of the field dependence of mobility. In the saturation region, using the geometrical model structure, the current increasement in this region is also analyzed, and the fitting parameter adopted in former papers is no longer needed. Simulated results with this analysis are in good agreement with experimental data for 1㎛-channel length device.
Electronic Probe와 Manual Probe에 의한 치은 열구 및 치주낭 측정의 재현성에 관한 비교연구
박광민,이재현 단국대학교 치의학연구소 1990 논문집 Vol.2 No.-
The purpose of this study was to compare reproducibility of double pockety depth measurements using electronic probe and manual probe. 11 human subjects with adult periodontitis were selected for the study. Two examiners measured 213 selected interproximal pockets using electronic probe and manual probe in twice at interval of one week after completion of preliminary treatment. The result were as follow; 1. In both examiners, except second measurements of examiner B, the mean of pocket depth measurements using manual probe was significantly higher than that using electronic probe (p<0.05). 2. The proportions of intra-examiner agreement for pocket depth measurements using electonic probe was significantly higher than that using manual probe in both examiners (p<0.01). 3. The proportions of inter-examiner agreement for pocket depth measurements using electronic probe was significantly higher than that using manual probe (p<0.05). 4. The proportions of intra-examiner agreement for pocket depth measurements using electonic probe and manual probe was significantly higher than that of inter-examiner agreement for pocket depth measurement in both examiners (p<0.05).
Short-Channel EIGFET의 Threshold 전압 모델에 관한 연구
박광민,김홍배,곽계달,Park, Gwang-Min,Kim, Hong-Bae,Gwak, Gye-Dal 대한전자공학회 1985 전자공학회지 Vol.22 No.4
본 논문에서는, drain 전압과 substrate bias에 종속적인 관계를 갖는 short-channel enhancement-mode IGFET의 threshold전압에 대한 보다 개선된 모델을 제시한다. 특히, 최근에 발표된 몇몇 모델들에 비해. short-channel effect에 의한 correction factor를 정확히 해석함으로써 오차를 충분히 줄일 수 있었으며, 본 모델을 이용하여 계산한 이론값은 약 1μm 정도의 채널 길이를 갖는 device에 대해서도 실험값과 잘 일치한다. In this paper, a more improved threshold voltage model dependent on drain voltage and substrate bias for short - channel enhancement - mode IGFET is presented. Especially, compared with the several recently published models, the error is sufficiently reduced with the precise analysis on the correction factor for short-channel effect and the calculated values using this model are also agreed well with the experimental data about 1$\mu$m - channel length device.
박광민 순천향대학교 부설 산업기술연구소 2001 순천향 산업기술연구소논문집 Vol.7 No.1
In this paper, a new 1.5V microwave peak detector is presented. Analyzing the designed peak detector circuit, the detection characteristic relationships are derived. And the designed peak detector can be integrated easily on the same chip as a module of large communication systems. The simulation results with SPICE for 2㎓ operating pulse signals and sinusoidal signals on the 1.5V supply voltage show the good detection characteristics for input signal levels of 50㎷ ~ 500㎷, and show very small power dissipation of 0.332㎽. Therefore, it may be used as a functional block for various signal processing systems.