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악골 낭종의 적출술 후 골재생에 대한 파노라마 촬영과 컴퓨터 단층촬영의 비교 분석
김택성(Taek-Sung Kim),이재훈(Jae-Hoon Lee) 대한구강악안면외과학회 2010 대한구강악안면외과학회지 Vol.36 No.2
Introduction: A cyst is a closed pathologic sac containing fluid or semi-solid material in central region. The most common conventional treatment for a cyst is enucleation. It was reported that spontaneous bone healing could be accomplished without bone grafting. We are trying to evaluate bone reconstruction ability by analyzing panorama radiograph and computed tomography (CT) scan with retrograde studying after cyst enucleation. In this way we are estimating critical size defect for spontaneous healing without bone graft. Materials and Methods: The study comprised of 45 patients who were diagnosed as cysts and implemented enucleation treatment without bone graft. After radiograph photo taking ante and post surgery for 6, 12, 18, 24 months, the healing surface and volumetric changes were calculated. Results: 1. Spontaneous bone healing was accomplished clinically satisfying 12 months later after surgery. But analyzing CT scan, defect volume changes indicate 79.24% which imply incomplete bone healing of defect area. 2. Comparing volume changes of defect area of CT scan, there are statistical significance between under 5,000 mm3 and over 5,000 mm3. The defect volume of 5,000 mm3 shows 2.79×1.91 cm in panoramic view. Conclusion: Bone defects, which are determined by a healed section using a panoramic view, compared to CT scans which do not show up. Also we can estimate the critical size of defects for complete healing.
인쇄 / 소결 방법에 의한 CdS 광전도 셀 제작과 특성
정태수,김택성,정철훈,이훈,신영진,홍광준,유평렬 ( Tae Soo Jeong,Taek Sung Kim,Cheol Hoon Jeong,Hoon Lee,Yeong Jin Shin,Kwang Joon Hong,Pyeong Yeol Yu ) 한국센서학회 1998 센서학회지 Vol.7 No.5
We fabricated a photoconductive cell made of polycrystalline CdS thick film which has high photo-sensitivity using a print/sintering method. The resultant grain size is about 4 ㎛. When CuCl₂ of 0.06 to 0.12 mg is added, the sensitivity and the ratio of photocurrent to dark current are 0.8 and 10³, respectively. The response wavelength is 511 nm. The rise and decay response times are 50 and 20 ms, respectively. In addition, the maximum power dissipation is beyond 80 mW. We noticed that the addition of CuCl₂ between 0.06 and 0.12 mg to 1g of CdS results in a reliable formation of photoconductive sensor.
HWE 방법에 의한 ZnSe/ZnSe(bulk) 박막 성장
신영진,정태수,신현길,김택성,정철훈,이훈,신영신,Shin, Yeong-Jin,Jeong, Tae-Soo,Shin, Hyun-Keel,Kim, Taek-Sung,Jeong, Cheol-Hoon,lee, Hoon,Shin, Yeong-Shin 한국진공학회 1993 Applied Science and Convergence Technology Vol.2 No.1
Hot-Wall Epitaxy(HWE) 방법으로 ZnSe/ZnSe(bulk) 박막을 성장하였다. 이 때 사용되어진 ZnSe 기판은 승화법으로 증발부분의 온도를 $1160^{\circ}C$ 성장부분의 온도를 $1130^{\circ}C$로 하여 약 2주 동안 직경 20mm, 높이 18mm인 원추형의 ZnSe 단결정을 얻었다. 양질의 ZnSe 박막을 얻기 위한 조건은 증발부분의 온도는 $610^{\circ}C$, 기판의 온도는 49$0^{\circ}C$이었다. ZnSe(bulk) 기판위에 성장한 ZnSe 박막의 광발광에서는 강한 D-A pair emission과 Cu 불순물에 의한 녹색과 적색 발광이 관측되었고 SA 발광은 관측되지 않았다.
Hot-Wall Evaporation Technique으로 성장된 CdS 박막의 광전도 셀 특성
신영진,정태수,신현길,김택성,정철훈,이훈,신영신,유기수,Shin, Yeong-Jin,Jeong, Tae-Soo,Shin, Hyun-Keel,Kim, Taek-Sung,Jeong, Cheol-Hoon,lee, Hoon,Shin, Yeong-Shin,Rheu, Kee-Soo 한국진공학회 1993 Applied Science and Convergence Technology Vol.2 No.1
Hot-wall evaporation technique으로 세라믹 기판 위에 CdS 박막을 성장하였다. 이 때 증발원과 기판의 온도는 각각 570, 40$0^{\circ}C$이고 두께는 3$mu extrm{m}$이었다. 공기 중에서 열처리하여 감도(${\gamma}$), 광전류와 암전류의 비(pc/dc), 최대허용소비전력(MAPD), spectral response 및 응답시간 등을 측정하였다. $550^{\circ}C$, 30분간 열처리한 경우 가장 좋은 광전도 특성을 얻었으며 ${\gamma}$=0.89, pc/cd~104, MAPD: 492mW, rise time이 100ms, decay time이 260ms이었다.
조도 센서를 이용한 단일 광원 대응 실내 위치 추정 기술
김택성, 황영수, 우상희 忠北大學校 農業科學硏究所 2017 農業科學硏究 Vol.33 No.1
In this paper, we tried to acquire the spatial information of unmanned mobile objects from the changes of measured values of illuminance sensor attached to unmanned moving objects in the indoor environment restricted by place and time. Therefore, the correlation of illuminance sensor according to single light source according to the position of unmanned mobile object is deduced. From this correlation, indoor positioning technique of unmanned mobile object is developed. As a result, the correlation between the illuminance sensor and the illumination position increased as the illuminance became closer to the light source. The correlation between data of illumination sensor and location of unmanned vehicles was increased as the distance from the light source was increased. There was less relationship between direction of sensor and distance from the light. The relationship between the distance from the light source and the data of illumination sensor was shown as a sixth polynomial equation. The illumination sensor under single light source might be used for indoor location information of unmanned vehicles. The additional experiment of finding position need to be verified to the in multiple source using illumination sensor.
유평렬,김택성 順天大學校 1991 論文集 Vol.10 No.1
수송물질로 요오드를 사용하여 기상 수송방법으로 ZnSe 단결저을 성장 하였다. 성장부분과 시료부분의 온도는 각각 815℃와 1065℃로 하였다. Van-der Pauw방법으로 측정된 전하농도와 Hall 운동도는 실온에서 각각 ?? ??,??/v-s order 정도 이었다. 성장된 sample의 PL방출 스펙트럼은 실온에서 520nm의 peak를 이루었으며 Lambe-Klick모델에 따르는 green 발광으로 분석 되었다. Crytal growth of zinc selenide by vapour phase transport method was carried out using iodine as a transporting agent in a sealed ampoule kept oat temperatures of 815℃ and 1065℃ for the growth part and source part, respectively. The electron carrier concentration and Hall mobility were measured of using Van der Pauw method at room temperature and their values are about ∼?? ?? and about ∼??/v-s, respectively. Photoluminescence emission spectra of the grown sample were peaked at 520nm at room temperature.
ZnSe 단결정에 대한 열자극 발광과 열자극 전류의 동시측정
전경남,유승철,고석룡,신용규,김택성,이춘호 全北大學校 基礎科學硏究所 1994 基礎科學 Vol.17 No.-
두 종류의 ZnSe 분말을 사용하여 sublimation 방법으로 성장한 ZnSe 단결정(as grown)에 대하여 TSC와 TSL을 동시 측정하였으며, PL과 DLTS를 측정하였다. PL 측정으로 I_1, I_2와 DAP 발광을 관측하였으며 DLTS에 의한 깊은준위를 관측하였다. TSL과 TSC의 동시 측정으로부터 얻은 그로우 곡선을 점근 해법으로 분해하여 세개의 준위를 얻었으며 그들의 활성화에너지값은 0.22 eV, 0.30 eV, 0.39 eV이었다. PL spectrum과 열자극 완화과정의 동시 측정 결과로부터 0.22 eV 근방에 impurity에 의한 주게준위와 native defect에 의한 받게준위가 각각 전도대의 아래와 가전자대의 위에 존재하는 것으로 판명되었다. DLTS 측정과 동시측정 결과로부터 0.30 eV와 0.39 eV의 준위는 V_se vacancy와 관련되는 주게 준위임을 알았다. Simultaneous measurements of TSL were carried out on ZnSe single crystals grown by high pressure Bridgman technique and the PL and DLTS signals were observed. Photoluminescence spectrum at 10 K on the ZnSe crystal reveals I_1 and I_2 lines, as well as DAP emission line. DLTS spectrum on the ZnSe crystal show electron trap at 0.33 eV. Two TSC and TSL peaks were observed near 215 K and 230 K, which are identified as having originated from two donor trap levels at 0.30 eV and 0.39 eV, respectively, below the bottom of the conduction band. We also observed single TSL and TSC peaks at 150 K which were identified as having originated from a donor and acceptor trap levels at about 0.22 eV below the conduction band and over the top of the valence band, respectively.