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이온빔 스퍼터링에 의한 ATO 박막의 실온 증착 및 열처리에 따른 특성변화
구창영,김경중,김광호,이희영 한국세라믹학회 2000 한국세라믹학회지 Vol.37 No.11
산화분위기에서의 반응성 이온빔 스퍼터링법으로 Sn과 Sb 금속 타겟을 사용하여 실온에서 ATO 박막을 증착하였다. Sb 첨가량, 박막의 두께 및 열처리가 ATO 박막의 전기적 특성과 광학적 특성에 미치는 효과를 연구하고자 하였다. 제조된 ATO 박막의 두께는 약 1500$\AA$과 1000$\AA$으로 조절하였으며, Sb 농도는 10.8wt% 또는 14.9wt%임이 XPS 분석에 의하여 확인되었다. 증착한 박막의 열처리는 40$0^{\circ}C$~$600^{\circ}C$의 온도범위에서 산소 또는 forming gas(10% H$_2$-90% Ar) 분위기에서 30분간 수행하였다. 이렇게 제조된 ATO 박막은 Sb의 첨가량, 두께 및 열처리 조건에 따라 다양한 전기 비저항 값과 가시광선 대역에서의 광투과도를 나타내었다.
Magnetoelectric Properties of Tb0.3Dy0.7Fe1.92/Pb(ZrxTi1−x)O3 Bilayer Thin Films
황성옥,구창영,이재열,이희영,류정호,김종우 한국물리학회 2013 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.63 No.12
Magnetoelectric Tb0.3Dy0.7Fe1.92(Terfenol-D)/PbZrxTi1−xO3(PZT) bilayer thin films were depositedon (111)-oriented Pt/Ti/SiO2/Si< 100 > substrates. The PZT layers with different compositions(x = 0.3 and 0.52) were grown on the substrates by using the sol-gel method. Terfenol-Dlayers were deposited on the PZT-film-coated substrate by ion beam sputtering at room temperaturewith a dot-type patterned metal shadow mask. The structural characteristics and the ferroelectric,ferromagnetic and magnetoelectric(ME) properties of the Terfenol-D/PZT bilayer thinfilms were investigated. In our results, the maximum remnant polarization, 2Pr were 60 µC/cm2for Terfenol-D/PZT(30/70) (Zr/Ti ratio = 30/70). The magnetization and the ME voltage coef-ficients were identical regardless of the Zr/Ti composition of PZT. The ME voltage coefficients ofthe films were over 400 mV/cm·Oe, which were about 4 times higher than the values reported forother bilayer structures.
윤동진,황성옥,구창영,이재열,이희영,류정호 한국물리학회 2013 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.62 No.7
Magnetic and electrical properties of CuFe<SUB>2</SUB>O<SUB>4</SUB>/BaTiO<SUB>3</SUB> thin films grown on highly textured Pt(111)/TiO<SUB>2</SUB>/SiO<SUB>2</SUB>/Si(100) substrates were studied. Sintered BaTiO<SUB>3</SUB> and CuFe<SUB>2</SUB>O<SUB>4</SUB> pellets prepared by the conventional mixed oxide process were used as targets during deposition by ion-beam sputtering and pulsed laser deposition technique. The film structure is of bilayer type, where BaTiO<SUB>3</SUB> layer lies underneath of CuFe<SUB>2</SUB>O<SUB>4</SUB> layer. CuFe<SUB>2</SUB>O<SUB>4</SUB>/BaTiO<SUB>3</SUB> film stack was then annealed at temperature between 700 筌퇒 and 750 筌퇒, followed by either FC (fast-cooling) or SC (slow-cooling) treatment. Ferroelectric and electrical properties were measured using ferroelectric test system, digital multimeter, and impedance analyzer. Magnetic hysteresis (M-H) behavior at room temperature was measured using vibration sample magnetometer (VSM) with maximum saturation magnetization (<I>M<SUB>s</SUB></I>) and coercivity (<I>H<SUB>c</SUB></I>) values of 700 emu/cm<SUP>3</SUP> and 325 Oe, respectively.
우동찬,이희영,구창영,마홍찬 한국전기전자재료학회 2012 Transactions on Electrical and Electronic Material Vol.13 No.5
Antimony doped tin oxide (ATO) thin films on glass substrate were prepared by the chemical solution deposition (CSD) method, using sol-gel solution synthesized by non-alkoxide precursors and the sol-gel route. The crystallinity and electrical properties of ATO thin films were investigated as a function of the annealing condition (both annealing environments and temperatures), and antimony (Sb) doping concentration. Electrical resistivity, carrier concentration, Hall mobility and optical transmittance of ATO thin films were improved by Sb doping up to 5~8 mol%and annealing in a low vacuum atmosphere, compared to the undoped tin oxide counterpart. 5 mol% Sb doped ATO film annealed at 550℃ in a low vacuum atmosphere showed the highest electrical properties, with electrical resistivity of about 8~10 × 10-3 Ω·cm, and optical transmittance of ~85% in the visible range. Our research demonstrates the feasibility of low-cost solution-processed transparent conductive oxide thin films, by controlling the appropriate doping concentration and annealing conditions.
Effects of Heterostructure Electrodes on the Reliability of Ferroelectric PZT Thin Films
Seung-HyunKim,Hyun-JungWoo,구창영,양정승,Su-MinHa,박동연,Dong-SuLee,하조웅 한국세라믹학회 2002 한국세라믹학회지 Vol.39 No.4
The effect of the Pt electrode and the Pt-IrO2 hybrid electrode on the performance of ferroelectric device was investigated. The modified Pt thin films with non-columnar structure significantly reduced the oxidation of TiN diffusion barrier layer, which rendered it possible to incorporate the simple stacked structure of Pt/TiN/poly-Si plug. When a Pt-IrO2 hybrid electrode is applied, PZT thin film properties are influenced by the thickness and the partial coverage of the electrode layers. The optimized Pt-IrO2 hybrid electrode significantly enhanced the fatigue properties with minimal leakage current.
김진우,임지호,김승현,구창영,류정호,정대용 한양대학교 세라믹연구소 2018 Journal of Ceramic Processing Research Vol.19 No.3
In this study, we attempted to achieve a high energy density capacitor using nanocrystalline Bi1.5Zn1.0Nb1.5O7 (BZN) thick film,which is paraelectric material having a linear polarization-electric field behavior. Dense BZN thick films with thickness of6~10 μm were deposited on the flexible metal substrates by Aerosol deposition. BZN thick films were annealed at variousannealing conditions (400, 500 and 600 oC for 2 h) and their energy storage properties were characterized. The BZN filmsannealed at 400 oC showed the highest discharged energy density (8.87 J/cm3) at 1400 kV/cm. The relative permittivity, whichis measured with low electric field, was stable up to 250 oC, and the discharged energy density, which is measured with highelectric field, was stable up to 125 oC.
You Jeong Eum,황성옥,구창영,이재열,이희영,류정호,박정민 한국물리학회 2014 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.65 No.3
CoFe2O4(CoFO)/Pt/Pb(Zr0.52Ti0.48)O3 (PZT) multilayer films were grown on Pt/Ti/SiO2/Sisubstrates. A thin Pt layer was inserted between the ferrimagnetic and the ferroelectric layersin order to suppress diffusion at high temperatures and thereby to prevent possible interfacialreactions. The effect of annealing on the film’s microstructure and multiferroic properties was theninvestigated using thin film stacks heat-treated at temperatures ranging from 550 to 650 C. Themagnetoelectric coefficients were calculated from the magnetoelectric voltages measured using amagnetoelectric measurement system. The effect of annealing temperature on the magnetoelectriccoupling in the CoFO/Pt/PZT multilayer thin film is discussed in detail.
Magnetoelectric Properties of Magnetic/Ferroelectric Multilayer Thin Films
황성옥,You Jeong Eum,구창영,이희영,박정민,류정호 한국물리학회 2014 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.65 No.2
Magnetic/ferroelectric multilayer thin films using PbZr0.52Ti0.48O3 (PZT) and two different magneticmaterials, i.e., Terfenol-D and CuFe2O4 (CuFO) layers, were fabricated, and their magnetoelectric(ME) coupling behavior was investigated. The PZT layer was first coated ontoPt/Ti/SiO2/Si substrate by sol-gel spin coating method. Pt layer, which served as an electrode anda diffusion barrier, was grown on the PZT layer by using the ion-beam sputtering method. The MEvoltage coefficients were calculated from the ME voltage data measured utilizing a magnetoelectrictest system. The Terfenol-D/Pt/PZT films were found to show a higher in-plane ME voltage coefficientthan that the CuFO/Pt/PZT films due primarily to the higher magnetostriction coefficientof Terfenol-D.
RF 마그네트론 스퍼터를 사용하여 증착한 IZTO 박막의 Zn/Sn 비율에 따른 효과
김기환,마리야느 푸트리,구창영,이정아,김정주,이희영,Kim, Ki Hwan,Putri, Maryane,Koo, Chang Young,Lee, Jung-A,Kim, Jeong-Joo,Lee, Hee Young 한국전기전자재료학회 2013 전기전자재료학회논문지 Vol.26 No.8
Indium Zinc Tin Oxide (IZTO) thin films were developed as an alternative to Indium Tin Oxide (ITO) thin films. ITO material which has been acknowledged with its low resistivity and optical transparency of 85-90% has been used as major transparent conducting oxide (TCO) materials. However, due to the limited source, high price, and instability problems at high temperature of indium, many researches has been focused on indium-saving TCO materials. Mason Group of Northwestern University was reported to expand the solubility limit up to 40% by co-doping with 1:1 ratio of $Zn^{+2}$ and $Sn^{+4}$ ions. In this study, the properties of IZTO thin films corresponding to Zn/Sn different ratio were investigated. In addition, the effect of substrate temperature variable to the structural, optical and electrical properties of IZTO thin films was investigated.