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서동범,박정호,곽영호,김도균,정재윤,이진희,장혜영,김한범,홍기정 대한소아응급의학회 2021 대한소아응급의학회지 Vol.8 No.2
Purpose: In Korea, the Broselow tape (BT) is widely used to estimate weight in resuscitation. Validation of BT in Korean children is essential because the tool was developed based on children’s weight and height in the United States. The validation was previously performed in a small-scale dataset. The authors aimed to validate BT using the 2005 Korean nationwide anthropometric survey data. Methods: From the population used for the survey, we sampled children aged 0-12 years. The weights estimated by BT were compared with measured weights of the children using Bland-Altman analysis with results recorded as percentage differences. We measured the accuracy of BT, defined as within a 10% error of the measured weight, and the concordance of the color-coded zones derived from the estimated and measured weights. The accuracy and concordance were further assessed according to the age groups and body mass index-for-age Z-score (< -2, underweight; > 2, overweight or obese). Results: A total of 108,128 children were enrolled. The mean age was 55.2 ± 37.5 months. The bias was –5.4% (P < 0.001), and the limits of agreement were –28.3% and 17.6%, respectively. The accuracy and concordance of BT were 64.4% and 67.2%, respectively. Differences of no more than 1 color-coded zone between estimated and measured weights accounted for 89.8% and 84.1% of the under- and overweight (or obese) children, respectively. Conclusion: BT accurately estimates weight in approximately two-thirds of Korean children. In addition, adjustment of 1 color-coded zone may be considered in children with extreme weight.
Si 도핑이 InAs 자기조립 양자점 적외선 소자 특성에 미치는 효과
서동범,황제환,오보람,김준오,이상준,김의태,Seo, Dong-Bum,Hwang, Je-hwan,Oh, Boram,Kim, Jun Oh,Lee, Sang Jun,Kim, Eui-Tae 한국재료학회 2019 한국재료학회지 Vol.29 No.9
We investigate the characteristics of self-assembled quantum dot infrared photodetectors(QDIPs) based on doping level. Two kinds of QDIP samples are prepared using molecular beam epitaxy : $n^+-i(QD)-n^+$ QDIP with undoped quantum dot(QD) active region and $n^+-n^-(QD)-n^+$ QDIP containing Si direct doped QDs. InAs QDIPs were grown on semi-insulating GaAs (100) wafers by molecular-beam epitaxy. Both top and bottom contact GaAs layer are Si doped at $2{\times}10^{18}/cm^3$. The QD layers are grown by two-monolayer of InAs deposition and capped by InGaAs layer. For the $n^+-n^-(QD)-n^+$ structure, Si dopant is directly doped in InAs QD at $2{\times}10^{17}/cm^3$. Undoped and doped QDIPs show a photoresponse peak at about $8.3{\mu}m$, ranging from $6{\sim}10{\mu}m$ at 10 K. The intensity of the doped QDIP photoresponse is higher than that of the undoped QDIP on same temperature. Undoped QDIP yields a photoresponse of up to 50 K, whereas doped QDIP has a response of up to 30 K only. This result suggests that the doping level of QDs should be appropriately determined by compromising between photoresponsivity and operating temperature.
InAs 양자점 형성 방법이 양자점 적외선 소자 특성에 미치는 효과
서동범,황제환,오보람,노삼규,김준오,이상준,김의태,Seo, Dong-Bum,Hwang, Je-hwan,Oh, Boram,Noh, Sam Kyu,Kim, Jun Oh,Lee, Sang Jun,Kim, Eui-Tae 한국재료학회 2018 한국재료학회지 Vol.28 No.11
We report the properties of infrared photodetectors based on two kinds of quantum dots(QDs): i) 2.0 ML InAs QDs by the Stranski-Krastanov growth mode(SK QDs) and ii) sub-monolayer QDs by $4{\times}[0.3ML/1nm\;In_{0.15}Ga_{0.85}As]$ deposition(SML QDs). The QD infrared photodetector(QDIP) structure of $n^+-n^-(QDs)-n^+$ is epitaxially grown on GaAs (100) wafers using molecular-beam epitaxy. Both the bottom and top contact GaAs layers are Si doped at $2{\times}10^{18}/cm^3$. The QD layers are grown with Si doping of $2{\times}10^{17}/cm^3$ and capped by an $In_{0.15}Ga_{0.85}As$ layer at $495^{\circ}C$. The photoluminescence peak(1.24 eV) of the SML QDIP is blue-shifted with respect to that (1.04 eV) of SK QDIPs, suggesting that the electron ground state of SML QDIP is higher than that of the SK QDIP. As a result, the photoresponse regime(${\sim}9-14{\mu}m$) of the SML QDIP is longer than that (${\sim}6-12{\mu}m$) of the SK QDIP. The dark current of the SML QDIP is two orders of magnitude smaller value than that of the SK QDIP because of the inserted $Al_{0.08}Ga_{0.92}As$ layer.