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        • KCI등재

          한국의 4M DRAM 공동연구개발 사례연구(상(上))

          주대영,Joo, Dae-Young 한국반도체디스플레이기술학회 2019 반도체디스플레이기술학회지 Vol.18 No.1

          4M D램 공동연구 개발사업(1986.10~89.03)은 당시 미 일의 강력한 기술보호주의를 극복하기 위한 자구책으로 시작되었다. 국내 반도체업계는 선진국의 높은 기술장벽 및 기술보호주의를 극복하고, 강력한 경쟁력확보 및 기술축적을 위해 정부에 건의하였다. 이에 정부는 적극적인 자금지원을 통해 4M D램 개발 및 주변기술 개발을 목표로 초고집적반도체기술공동개발사업을 수행하게 되었다. 본 공동R&D사업은 ETRI의 주관으로 당시 금성반도체, 삼성전자, 현대전자산업 등의 반도체 업체와 학계가 참여하였고, 1986년 10월부터 1989년 3월까지 3단계에 걸쳐 수행되었다. 공동연구의 목적은 설계, 공정, 조립, 검사 등 4M D램 제조와 관련되는 기본기술개발과 함께 $0.8{\mu}m$ 선폭의 4M D램을 개발하는 것이며, 이를 위해 단계별 목표를 설정하고 관민연의 혼연일치로 추진되었다. 1차년에는 중요 핵심기술개발, 2차년에는 $0.8{\mu}m$ 4M D램 Working-die개발, 3차년에는 수율 20%의 $0.8{\mu}m$ 4M D램 양산시 제품을 목표대로 완료하였다. 각 연구단계별로 주요 핵심기술에 대한 연구평가가 실시되었으며, 관련기술에 대한 중복투자 방지를 위해 2차년도부터 분담연구가 수행되었고, 상호 기술공유를 위한 기술교류회가 활발히 이루어졌다. 또한 R&D수행을 통해 4M D램 Working-die를 2차년도 중반에 개발완료하였으며, 3차년도에는 4M D램의 20% 수율확보와 공정기술의 최적화 및 DB 구축을 수행했다. 공동R&D 방식에서도 기업간 경쟁체제 도입에 입각하여 동기유발 형태로 진행되었다. 정부는 자금적 지원으로 기업간의 경쟁 심리를 자극하는 전략을 추진했다. 선두기업인 삼성에게는 선행적 개발 지위에 비례하여 더 많은 지원을 부여하는 대신에, 삼성의 기술성과를 다른 기업에게로 확산시킴으로써 반도체 3사 전체의 기술능력을 향상시키는 전략을 추진했다. 본 사업이 성공적으로 수행되어 반도체 제품의 세계시장 점유율제고, 국제수지 개선, 반도체 핵심기술 조기확보뿐만 아니라 16M D램급 이상 차세대 반도체기술 개발의 교도보가 되었다.

        • KCI등재

          플라즈마 디스플레이의 기술과 현황

          강정원,김영섭 한국반도체디스플레이기술학회 2004 반도체디스플레이기술학회지 Vol.3 No.4

          21세기에 접어들면서 Digital시험방송의 시작과 다양한 Contents의 유입으로 평판디스플레이 (Flat Panel Display)에 관한 관심과 수요가 증가하고 있다. 이 중 PDP는 90년대 후반부터 양산 및 개발을 시작하여 현재는 40 inch에서 60 inch 화면 크기의 제품을 시장에서 구입할 수 있으며, 03년도에는 80 inch 크기의 Proto-type Model을 공개한 바 있다. PDP는 40 inch 이상의 대면적 구현이 용이하다는 점, CRT와 동등 수준의 화상 구현이 가능하다는 점, 제조공법이 간단하고 제조원가가 저렴하다는 점 등을 특징으로 시장을 확대하고 있으나, 좀 더 대중적인 디스플레이가 되기 위해서는 고휘도 및 고효율화, 화질개선 그리고 저가격화 등과 같은 과제를 해결하여야 한다. 본 논문에서는 PDP의 개발역사 및 시장현황, 구조 및 구동 방법 그리고 해결과제 및 전망에 대해서 포괄적으로 살펴보기로 한다.

        • KCI등재

          HF 습식 식각을 이용한 극자외선 노광 기술용 SiN<sub>x</sub>

          김지은,김정환,홍성철,조한구,안진호,Kim, Ji Eun,Kim, Jung Hwan,Hong, Seongchul,Cho, HanKu,Ahn, Jinho 한국반도체디스플레이기술학회 2015 반도체디스플레이기술학회지 Vol.14 No.3

          In order to protect the patterned mask from contamination during lithography process, pellicle has become a critical component for Extreme Ultraviolet (EUV) lithography technology. According to EUV pellicle requirements, the pellicle should have high EUV transmittance and robust mechanical property. In this study, silicon nitride, which is well-known for its remarkable mechanical property, was used as a pellicle membrane material to achieve high EUV transmittance. Since long silicon wet etching process time aggravates notching effect causing stress concentration on the edge or corner of etched structure, the remaining membrane is prone to fracture at the end of etch process. To overcome this notching effect and attain high transmittance, we began preparing a rather thick (200 nm) $SiN_x$ membrane which can be stably manufactured and was thinned into 43 nm thickness with HF wet etching process. The measured EUV transmittance shows similar values to the simulated result. Therefore, the result shows possibilities of HF thinning processes for $SiN_x$ EUV pellicle fabrication.

        • KCI등재

          직류 마그네트론 스퍼터링 공정 중 타겟 오염에 따른 박막 및 계면 형성 특성

          이진영,허민,이재옥,강우석 한국반도체디스플레이기술학회 2019 반도체디스플레이기술학회지 Vol.18 No.1

          Reactive sputtering is widely used because of its high deposition rate and high step coverage. The deposition layer is often affected by target poisoning because the target conditions are changed, as well, by reactive gases during the initial stage of sputtering process. The reactive gas affects the deposition rate and process stability (target poisoning), and it also leads unintended oxide interlayer formation. Although the target poisoning mechanism has been well known, little attention has been paid on understanding the interlayer formation during the reactive sputtering. In this research, we studied the interlayer formation during the reactive sputtering. A DC magnetron sputtering process is carried out to deposit an aluminum oxide film on a silicon wafer. From the real-time process monitoring and material analysis, the target poisoning phenomena changes the reactive gas balance at the initial stage, and affects the interlayer formation during the reactive sputtering process.

        • KCI등재

          자외선 경화형 고경도 PET 필름의 제조 및 특성

          김현준 한국반도체디스플레이기술학회 2014 반도체디스플레이기술학회지 Vol.13 No.1

          UV curable transparent hard coating materials have been developed to improve the mechanical and optical properties of PET substrate. The coating materials were synthesized using various urethane acrylate oligomers, monomers, photo initiators, and leveling agents. The materials were coated on PET substrates and UV cured. The hard coated PET films were shown to have the good scratch resistance and transparency. When the urethane acrylate oligomer with more functional groups was introduced into the coating solution, the mechanical and optical properties were improved. However the higher concentration of 9-functional oligomer resulted in the decrease of workability. The addition of trimethylolpropane ethoxylate(EO/OH)9 triacrylate(TMPETA) to coating solution improved the workability and properties. As a result, the UV cured film from the formulation of urethane acrylate oligomer with 9-functional groups, TMPETA as a monomer, IRACURE 754 as a photo initiator and BYK-340 as a leveling agent showed the best mechanical and optical properties in this study.

        • KCI등재

          머신 러닝 회귀 방안을 이용한 인공지지체 기공 크기 예측모델 성능에 관한 연구

          이송연,허용정,Lee, Song-Yeon,Huh, Yong Jeong 한국반도체디스플레이기술학회 2020 반도체디스플레이기술학회지 Vol.19 No.1

          In this paper, We need to change all print factors when which print scaffold with 400 ㎛ pore using FDM 3d printer. Therefore the print quantity is 10 billion times, So we are difficult to print on workplace. To solve the problem, we used the prediction model based machine learning regression. We preprocessed and learned the securing print condition data, and we produced different kinds of prediction models. We predicted the pore size of scaffolds not securing with new print condition data using prediction models. We have derived the print conditions that satisfy the pore size of 400 ㎛ among the predicted print conditions of pore size. We printed the scaffolds 5 times on the condition. We measured the pore size of the printed scaffold and compared the average pore size with the predicted pore size. We confirmed that error was less than 1%, and we were identify the model with the highest pore size prediction performance of scaffold.

        • KCI등재

          스마트 설비관리시스템 구축 및 효과분석

          심현식 한국반도체디스플레이기술학회 2017 반도체디스플레이기술학회지 Vol.16 No.3

          EES System support to maximize equipment efficiency by providing real-time information of main equipment which has a significant effect on product quality and productivity, and to prevent equipment failure by detecting equipment abnormality in advance. Smart Equipment Engineering System(S-EES) integrates the activities performed at Equipment that are the core of production activities and manages them by system so as to maximize the efficiency of Equipment and raise the quality level of products to one level. In other words, when the product is put into the equipment, the recipe is downloaded through the RMS, the recipe is set to the optimal condition through R2R(process control), and the system detects and controls the abnormality of the equipment during operation through the FDC function in real time it means. In this way, we are working with the suitable recipe that matches the lot of product, detecting the abnormality of the equipment during operation, preventing the product from being defective, and establishing a system to maximize the efficiency through real-time equipment management. In this study, we review the present status and problems of equipment management in actual production lines, collect the requirements of the manufacturing line for the PCB line, design and develop the system, The measurement model was studied.

        • KCI등재

          SRAF를 적용한 극자외선 노광기술용 위상 변위 마스크의 반사도에 따른 이미징 특성 연구

          장용주,김정식,홍성철,조한구,안진호 한국반도체디스플레이기술학회 2015 반도체디스플레이기술학회지 Vol.14 No.3

          In photolithography process, resolution enhancement techniques such as optical proximity correction (OPC) and phase shift mask (PSM) have been applied to improve resolution. Especially, sub-resolution assist feature (SRAF) is one of the most important OPC to enhance image quality including depth of focus (DOF). However, imaging performance of the mask could be varied with the diffraction order amplitude changed by inserting SRAF. Therefore, in this study, we investigated the imaging properties and process margin of attenuated PSM with SRAF. Reflectivities of attenuated PSMs at 13.5 nm were 3, 6, 9% and simulation was performed by PROLITHTM. As a result, aerial image properties and DOF as well as diffraction efficiency were improved by increasing the reflectivity of attenuated PSM. Additionally, printed critical dimension variations depending on SRAF width and space error were also reduced for attenuated PSM with high reflectivity. However, SRAF could be printed when reflectivity of attenuated PSM is high enough. In conclusion, optimization of reflectivity of attenuated PSM and SRAF to prevent side-lobe from being printed is needed to be considered.

        • KCI등재후보

          자외선 피코초 레이저를 이용한 Low-k 웨이퍼 인그레이빙 특성에 관한 연구

          문성욱,배한성,홍윤석,남기중,곽노흥,Moon, Seong-Wook,Bae, Han-Seong,Hong, Yun-Suk,Nam, Gi-Jung,Kwak, No-Heung 한국반도체디스플레이기술학회 2007 반도체디스플레이기술학회지 Vol.6 No.1

          Low-k wafer engraving process has been investigated by using UV pico-second laser with high repetition rate. Wavelength and repetition rate of laser used in this study are 355 nm and 80 MHz, respectively. Main parameters of low-k wafer engraving processes are laser power, work speed, assist gas flow, and protective coating to eliminate debris. Results show that engraving qualities of low-k layer by using a laser with UV pico-second pulse width and high repetition rate had better kerf edge and higher work speed, compared to one by conventional laser with nano-second pulse width and low repletion rate in the range of kHz. Assist gas and protective coating to eliminate debris gave effects on the quality of engraving edge. Total engraving width and depth are obtained less than $20\;{\mu}m$ and $10\;{\mu}m$ at more than 500 mm/sec work speed, respectively. We believe that engraving method by using UV pico-second laser with high repetition rate is useful one to give high work speed in laser material process.

        • KCI등재

          표면결함식각 및 반사방지막 열처리에 따른 태양전지의 효율 개선

          조찬섭,김봉환,오정화,이병렬 한국반도체디스플레이기술학회 2014 반도체디스플레이기술학회지 Vol.13 No.2

          In this study general solar cell production process was complemented, with research on improvement of solar cell efficiency through surface structure and thermal annealing process. Firstly, to form the pyramid structure, the saw damage removal (SDR) processed surface was undergone texturing process with reactive ion etching (RIE). Then, for the formation of smooth pyramid structure to facilitate uniform doping and electrode formation, the surface was etched with HND(HF : HNO3 : D.I. water=5 :100 : 100) solution. Notably, due to uniform doping the leakage current decreased greatly. Also, for the enhancement and maintenance of minority carrier lifetime, antireflection coating thermal annealing was done. To maintain this increased lifetime, front electrode was formed through Au plating process without high temperature firing process. Through these changes in two processes, the leakage current effect could be decreased and furthermore, the conversion efficiency could be increased. Therefore, compared to the general solar cell with a conversion efficiency of 15.89 %, production of high efficiency solar cell with a conversion efficiency of 17.24 % was made possible

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