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Shim, Jae Yeob,Baek, Kyu-Ha,Park, Kun-Sik,Shin, Hong-Sik,No, Kwang-Soo,Lee, Kijun,Do, Lee-Mi American Scientific Publishers 2010 Journal of nanoscience and nanotechnology Vol.10 No.5
<P>The sub-50 nm templates are successfully fabricated using hydrogen silsesquioxane (HSQ) and silicon nitride on silicon substrate. The HSQ template is directly patterned by e-beam direct writing. The cured HSQ pattern is used for the template of nanoimprint process. The silicon nitride template is reactively ion etched by ZEP resist mask pattern which is prepared by e-beam direct writing using ZEP resist. The line widths of HSQ templates and ZEP patterns after developments are between 22-30 nm and 24-30 nm, respectively. The line width of silicon nitride templates without performing descum is same as that of the ZEP pattern but shows a rough surface. When plasma descum was performed before RIE, the line width of silicon nitride templates increased from 27 nm to 35 nm and has a clean surface. The HSQ template fabrication results in this study will be promise for sub-nm imprint process.</P>
Jae Yeob Shim,Byeong Ok Lim,Dong Hoon Shin,Hae Cheon Kim,Hyung Sup Yoon,Jin Hee Lee,Jin Koo Rhee,Ju Yeon Hong,Kyoung Ik Cho,Sung Chan Kim 한국물리학회 2004 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.44 No.1
The noise performance of 0.15 m GaAs power metamorphic high electron mobility transistor (MHEMT) devices with a double-doped In0:52Al0:48As/In0:53Ga0:47As structure has been investigated together with the DC and microwave characteristics. The 0.15 100 m2 MHEMT device shows a high gate-to-drain breakdown voltage of ..8.3 V, an extrinsic transconductance of 740 mS/mm, and a threshold voltage of ..0.97 V. The obtained cut-o frequency and maximum frequency of oscillation are 133 GHz and 235 GHz, respectively. A very low minimum noise gure of 1.11 dB and an associated gain of 9.51 dB at 30 GHz are obtained for the power MHEMT with an In content of 53 % in the InGaAs channel. This excellent noise characteristic is attributed to a drastic reduction in the gate resistance by the T-shaped gate with a wide head and to the improved device performance.
도핑되지 않은 다결정 다이아몬드 박막의 전계방출기구 조사
심재엽(Jae Yeob Shim),지응준(Eung Joon Chi),송기문(Kie Moon Song),백홍구(Hong Koo Baik) 한국진공학회(ASCT) 1999 Applied Science and Convergence Technology Vol.8 No.4(1)
도핑되지 않은 다이아몬드 박막의 전계방출기구를 조사하기 위하여 양의 기판전압과 메탄농도를 변화시켜 구조적 특성이 다른 다이아몬드 박막을 제조하였다. 메탄농도와 양의 기판전압을 증가시킴에 따라 다이아몬드 박막내에 존재하는 비다이아몬드 성분은 증가하였다. 기판전압을 증가시킴에 따라 비다이아몬드 성분이 증가하는 것은 기판온도의 증가와 CH_n 라디칼(radical)의 과잉 생성때문이라고 생각된다. 도핑되지 않은 다결정 다이아몬드 박막의 전계방출특성은 비다이아몬드 성분의 양이 증가함에 따라 현저하게 향상되었다. 비다이아몬드 성분이 적은 경우에는 다이아몬드 표면을 통하여 전자가 방출되며 비다이아몬드 성분이 많은 경우는 모서리 뿐만아니라 내부를 통하여 전자가 방출됨을 알 수 있었다. 본 연구로부터 비다이아몬드 성분의 양에 따른 두가지의 전계방출기구가 제시되었다. In order to investigate field emission mechanism of undoped polycrystalline diamond films, diamond films with different structural properties were deposited by varying positive substrate bias and/or CH₄ concentration. When increasing the CH₄ concentration and positive substrate bias voltage, nondiamond carbon content in diamond films increased. Increase of nondiamond carbon content with increasing substrate voltage is ascribed to increase of substrate and excess generation of CH_n radicals. Field emission properties of undoped polycrystalline diamond films were significantly enhanced with increasing nondiamond carbon content. For diamond films with a small amount of nondiamond carbon, electrons are emitted through diamond surface while for the films with a large amount of nondiamond carbon, electron emission occurs through diamond bulk as well as surface. From this study, depending on nondiamond carbon content two field emission mechanisms were suggested.
Carbonylation of 1-Bromo-2,6-bis(bromomethyl)benzene Catalyzed by Cobalt Carbonyl
Sang Chul Shim,Shin Ae Chae,Dong Yeob Lee,Young Zoo Youn,Jae Goo Shim,Chil Hoon Doh Korean Chemical Society 1993 Bulletin of the Korean Chemical Society Vol.14 No.4
Dialkyl 1-bromobenzene-2,6-diacetates were easily prepared by the carbonylation of the moiety of benzylic bromide in 1-bromo-2,6-bis(bromomethyl)benzene with alcohol in the presence of NaOAc< ${\cdot}$3H$_2$O and a catalytic amount of Co$_2$(CO)$_8$under the atmospheric pressure of carbon monoxide at room temperature in excellent yield. Alkyl 2,6-bis(alkoxymethyl)benzoates were obtained by the carbonylation of the moiety of aryl bromide in 1-bromo-2,6-bis(alkoxymethyl)-benzene, which derived from 1-bromo-2,6-bis(bromomethyl)benzene, alcohol, NaOR, and CH$_3$I under the same conditions. Alkyl 2,6-bis(carboxymethyl)benzoate was also obtained in a trace amount for 24 hrs at room temperature.
Jin Hee Lee,,Jae Yeob Shim,,Hyung Sup Yoon,Hae Cheon Kim 한국물리학회 2003 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.42 No.III
In this paper, we report the SiN assisted lithography process using a succinic-based solution for fabricating InGaAs/InAlAs/GaAs metamorphic HEMTs (MHEMT). We developed the 0.15 $\mu$m patterning technology by SiN etch back process using 0.2 $\mu$m E-beam lithography pattern. The 0.15 $\mu$m MHEMT devices were fabricated using the SiN assisted gate formation process. The wet recessed 0.15 $\mu$m $\times$ 100 $\mu$m MHEMT devices show DC output characteristics having a high gate-to-drain breakdown voltage of $-$7.6 V, an extrinsic transconductance of 1000 mS/mm, and a threshold voltage of $-$0.75 V. The f$_T$~and f$_{max}$ obtained for the MHEMT device were 140 GHz and 230 GHz, respectively.
Gate Recess Process for 80-nm T-Shaped Gate Metamorphic HEMTs on GaAs Substrates
Hyung Sup Yoon,Jae Yeob Shim,Dong Min Kang,Ju Yeon Hong,Kyung Ho Lee 한국물리학회 2007 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.50 No.3
A gate recess process was developed to control the gate recess depth and the short lateral etching width for device fabrication, and a metamorphic HEMT (MHEMT) device with an 80-nm T-shaped gate was demonstrated using this gate recess process. A reduced lateral recess width of 53-nm was obtained on the etch side of a T-shaped gate for the gate recess process. The DC and the microwave characteristics of 80-nm MHEMT devices with In$_{0.53}$Ga$_{0.47}$As channels was investigated. The 80 nm $\times$ 100 $\mu$m MHEMT device showed a high gate-to-drain breakdown voltage of $-$7.5 V, an extrinsic transconductance of 900 mS/mm, and a threshold voltage of $-$0.6 V. The obtained cut-off frequency and maximum frequency of oscillation were 230 GHz and 300 GHz, respectively. This excellent device performance is attributed to the reduced gate length and lateral recess width for this device fabrication process.
HFCVD법으로 증착된 다이아몬드 박막의 이온주입 효과
백홍구,심재엽,송기문 건국대학교 자연과학연구소 1999 建國自然科學硏究誌 Vol.10 No.1
다이아몬드 에미터는 디바이스 안정성이나 내구성에서 탁월한 성능을 가지므로 합성 다이아몬드 박막에 대한 관심이 크다. 이온주입의 효과가 고온 휠라멘트 화학기상증착법(HFCVD)법으로 성장된 다이아몬드 박막의 다이아몬드 품질에 미치는 영향을 연구하였다. 여기서는 붕소와 인의 이온을 고 에너지로 주입시켜, 이온 주입 전후의 다이아몬드의 구조적 변화를 분석하였다. Raman 스펙트럼 측정에 의하면 붕소 이온 주입된 시료는 많은 흑연 성분을 포함한 미약한 다이아몬드의 특성을 보이고 있으나, 인 이온 주입된 시료는 다이아몬드 구조를 나타내지 않는다. Auger 스펙트럼을 분석하면 붕소와 인 이온을 주입한 시료 모두가 표면에 심한 이온주입 훼손이 생겨 다이아몬드 특성을 잃은 것을 알 수 있다. There has been much interest in synthetic thin film diamond as the emitter materials because the diamond emitter can carry a crucial performance for the device stability and durability. Diamond films grown by hot filament chemical vapor deposition (HFCVD) have been studied to investigate the effect of ion implantation on diamond qualities. Here the diamond films were implanted with boron and phosphorus ions and analyzed their structural changes by implantations. From Raman spectra, the boron ion implanted samples still show a weakened diamond peak with high graphite component while the phosphorus ion implanted sample loses diamond structure. On tile other hand. their AES spectra at surface do not exhibit an obvious diamond shoulder, indicating the surface of ion implanted samples damaged by high fore implantation.