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CaS : Bi 형광체의 Photoluminescence 특성
황해선,김성철,최홍수 동의대학교 기초과학연구소 1991 基礎科學硏究論文集 Vol.1 No.1
CaS:Bi Phosphors have been prepared using sulfurizing flux method and the result of measuring photoluminescence is presented single peak of 450 nm-wavelength with extensively strong intensity when flux(Na₂CO₃) is mixed 30 mol% and activator(Bi) is doped 0.1 mol% in host(CaS). And when activator is doped 0.01 mol% and 1 mol% there are appeared new peaks of one(580 nm) and two(520 and 640 nm) originated from Na and Bi-Na centers, respectively.
CaS : Ce와 Ca_1-χSr_χS : Ce 형광체의 Photoluminescence 특성
황해선,이우교,김영욱 동의대학교 기초과학연구소 1995 基礎科學硏究論文集 Vol.5 No.1
CaS:Ce and Ca_1-χSr_χS:Ce phosphors have been prepared using the sulfurizing flux method and the result of measuring photoluminescence is presented two peaks with extensively strong intensity, when flux (Na₂CO₃) is mixed 30 mol% and activator doped 0.1 mol% in the host (CaS). The two peaks of CaS:Ce phosphor are appeared at 513㎚ and 576㎚ wavelengthes when liminescenct transition in Ce^3+ is given as 5d(²D)→4f(²f_5/2) and 5d(²D)→4f(²f_7/2) and that of Ca_1-χSr_χS:Ce phosphor are shifted toward short wavelength as much as 30㎚ when χ is changed from 0 to 1, but the shape of wavelength is not varied.
A Study of Elastic Properties of Cr-doped KTiOPO₄Single Crystals by Brillouin Scattering
HWANG, Hae-Sun,KIM, Sung-Chul,KIM, Jung-Hwan,Yu, Yun-Sik,JIN, Byung Moon,LEE, Jong In,KIM, In Soo,LEE, Suk-Mock 동의대학교 기초과학연구소 1999 基礎科學硏究論文集 Vol.9 No.1
Pure and Cr-doped single crystals KTP which are grown by the TSSG method are large and good quality ones. Brillouin scattering experiment is carried out to study the elastic properties of the grown crystal. We obtain all of none elastic constants of the KPT crystal from one cubic sample, through which piezoelectric effect is considered. As a result the obtained elastic constants are some what different from the others' results. In this work we use the back scattering method for determining elastic constants of our samples.
박재돈,황해선 동의대학교 기초과학연구소 1997 基礎科學硏究論文集 Vol.7 No.1
기판의 온도를 여러가지로 달리하여 전자선 증착법으로 양질의 다결정 CdS 박막을 제작하여 광학상수(굴절률 n_f, 및 소광결수 k)는 400~3000 nm 파장영역에서 투과빛띠를 측정하여 결정하였다. 박막의 두께변화와 기판온도 변화에 따른 광학적 띠간격의 변화를 조사하였다. 박막의 두께가 증가하면 띠간격은 감소하고, 박막이 얇을 때 띠간격은 두께의 제곱에 반비례하며 이는 양자크기효과와 연관되어 있다. CdS 박막의 굴절률은 두께가 증가할수록 증가하며 굴절률의 분산경향은 Sellmeier의 분산식에 의한 단일 진동자 모형을 따른다.
김성철,황해선,정중현,도시홍,김종일,김중환 동의대학교 기초과학연구소 1998 基礎科學硏究論文集 Vol.8 No.1
Bismuth germanate crystals well known as scintillator were grown by Czochralski method. In order to understand a mechanism of radiation resistance in Eu-doped BGO, we measured radiation induced-absorption spectra, excitation spectra, emission spectra and luminescence lifetimes of BGO crystals. We found that the charge transfer state of Eu^3+ ion is to play a key role to enhance the radiation resistance in BGO crystal. The ^5D_0 emission of Eu^3+ ions that is not suitable for the radiation detectors due to a long decay time was found to be increased with increasing europium concentration. In the BGO crystal doped with 0.1 mole%, the density of radiation induced color centers was reduced about twenty times and the light output of ^5D_0 was negligible by comparing to that of BGO.
니켈 실리사이드의 상에 따른 전자구조가 Auger 스펙트럼에 미치는 효과
김성철,박재돈,황해선,김건호,이정주,김인호,서동주,황도원,최치규,이정용 동의대학교 기초과학연구소 1992 基礎科學硏究論文集 Vol.2 No.1
Nickel silicides were grown on Si(111) substrate by annealing Ni(400Å)/Si(111) samples at temperatures ranging from RT to 750℃ in ultra high vacuum. The Auger spectra taken from samples during annealing showed that the critical temperature for Ni diffusion in Si(111) substrates was ∼157℃, but no phases of nickel silicide were detected at this temperature range. The observed phases were identified as Ni₂Si(∼250℃), NiSi(∼450℃), and NiSi₂(∼750℃) by both analyzing the line shape of Auger spectra and calculating the atomic concentration of Ni and Si using modified Auger sensitivity factors. The fine structures observed at the Ni MMM and Si L_2.3VV spectra could be understood as reflecting the partial density of states of Ni d and Si p orbitals and were closely related with the chemical environments produced by the charge transfer from Ni to Si atoms.
니켈 실리사이드의 상에 따른 전자구조가 Auger 스펙트럼에 미치는 효과
김성철,박재돈,황해선,김건호,이정주,김인호,서동주,황도원,최치규,이정용 慶尙大學校 기초과학연구소 1992 基礎科學硏究所報 Vol.8 No.-
단결정 Si(111)면에 고진공에서 Ni를 400Å 증착하고 이를 초고진공내에서 실온으로부터 750℃까지 열처리하여 실리사이드를 형성시켰다. 열처리중 표면 원소에 대한 Auger 스펙트럼을 조사하여 Ni의 확산 임계온도가 ∼157℃임을 알았고 이 온도에서는 실리사이드의 phase가 고정되지 않음을 보았다. 초기 phase인 Ni_2Si는 ∼250℃에서 NiSi는 ∼450℃에서, 그리고 NiSi_2는 ∼750℃에서 형성되었고 그 stoichiometry는 보정된 Auger 감도인자를 써서 구할 수 있었다. Ni MMM 및 Si L_2.3VV 스펙트럼의 line shape에서 나타난 미시구조는 가전자대의 구조와 Ni로부터 Si로 이동한 전하량에 의존함을 보았다. Nickel silicides were grown on Si(111) substrate by annealing Ni(400Å)/Si(111) samples at temperatures ranging from RT to 750℃ in ultra high vacuum. The Auger spectra taken from samples during annealing showed that the critical temperature for Ni diffusion in Si(111) substrates was ∼157℃, but no phases of nickel silicide were detected at this temperature range. The observed phases were identified as Ni_2Si(∼250℃), NiSi(∼450℃)and NiSi_2(∼750℃) by both analyzing the line shape of Auger spectra and calculating the atomic concentration of Ni and Si using modified Auger sensitivity factors. The fine structures observed at the Ni MMM and Si L_2.3VV spectra could be understood as reflecting the partial density of states of Ni d and Si p orbitals and were closely related with the chemical environments produced by the charge transfer from Ni to Si atoms.
Al₂O₃物性(Ⅰ) : 粉末法에 依한 α-Al₂O₃의 構造解析 The structure analysis of α-Al₂O₃ by powder method
白南柱,朴載昊,陳光守,黃海善 부산대학교 1972 論文集 Vol.13 No.1
The molecular structure of α-Al₂O₃ is well known being already analyzed by the power method of X-Ray. The diffraction angles of X-Ray beam are measured by the intensity distribution of diffraction beam of X-Ray. The structure of α-Al₂O₃ was Supposed to be a rhombohedron and the Miller-index was determined by a axial transformation from rhombohedral system to hexagonal system. As a result of this study, the lattice constant and axial angle were 5.1252±0.0017 Å and 55°17′ respectively, and the chemical unit per unit cell is two.