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HVPE 방법에 의해 r-plane 사파이어 기판 위의 선택 성장된 GaN/AlGaN 이종 접합구조의 특성
홍상현,전헌수,한영훈,김은주,이아름,김경화,황선령,하홍주,안형수,양민,Hong, S.H.,Jeon, H.S.,Han, Y.H.,Kim, E.J.,Lee, A.R.,Kim, K.H.,Hwang, S.L.,Ha, H.,Ahn, H.S.,Yang, M. 한국결정성장학회 2009 한국결정성장학회지 Vol.19 No.1
본 논문에서는 혼합소스(mixed-source) HVPE(hydride vapor phase epitaxy)방법으로 선택성장(SAC: selective area growth) GaN/AlGaN 이종접합구조의 발광다이오드를 r-plane 사파이어 기판 위에 제작하였다. SAG-GaN/AlGaN DH(double heterostructure)는 고온 GaN 버퍼층, Te 도핑된 AlGaN n-클래딩층. Gan 활성층. Mg 도핑된 AlGaN p-클래딩층. Mg 도핑된 GaN p-캡층으로 구성되어있다. GaN/AlGaN 이종접합구조의 발광다이오드의 특성을 알아보기 위해 SEM을 통한 구조적 분석과 전류-전압 측정(I-V: current-voltage measurement), 전류-광출력(EL: electroluminescence) 측정을 통하여 전기적, 광학적 특성을 평가하였다. In this paper, a selective area growth (SAG) of a GaN/AlGaN double heterostructure (DH) has been performed on r-plane sapphire substrate by using the mixed-source hydride vapor phase epitaxy (HVPE) with multi-sliding boat system. The SAG-GaN/AlGaN DH consists of GaN buffer layer, Te-doped AlGaN n-cladding layer, GaN active layer, Mg-doped AlGaN p-cladding layer, and Mg-doped GaN p-capping layer. The electroluminescence (EL) characteristics show an emission peak of wavelength, 439 nm with a full width at half maximum (FWHM) of approximately 0.64 eV at 20 mA. The I-V measurements show that the turn-on voltage of the SAG-GaN/AlGaN DH is 3.4 V at room temperature. We found that the mixed-source HVPE method with a multi-sliding boat system was one of promising growth methods for III-Nitride LEDs.
J. A. Hwang(황진아),D. S. Kim(김동수) Korean Society for Precision Engineering 2021 한국정밀공학회 학술발표대회 논문집 Vol.2021 No.11월
In₂O₃ nanoparticles decorated with Au, Pt and Pd catalysts were synthesized by thermal decomposition. Their gas sensing properties to CO gas and morphologies were investigated with a gas sensing equipment, X-ray diffractometer (XRD), SEM and transmission electron microscopy (TEM). Previously prepared In(NO₃)₃ aqueous solution is heated to 100℃ and then HMTA (Hexamethylenetetramine) is added into this solution and reacted for 2hours. After that, the solution was cooled down to room temperature, centrifuged, washed with ethanol and dried at 100℃, which led to intermediate phase In(OH)₃. It was dispersed in Deionized water in Ice bath, in which HAuCl₄ (H₂Cl6Pt Cl₂Pd) and NaBH₄ was added, and then maintained there for 2 hours. Just as HAuCl₄ (H₂Cl6Pt Cl₂Pd) and NaBH₄ was added, the color of the solution changed brown immediately. Final products were centrifuged, washed with ethanol, dried at 100℃ and calcinated at 300℃ for 2h in order to obtain Au/In₂O₃, Pt/In₂O₃ and Pd/In₂O₃ nanoparticles. Au decorated In₂O₃ nanoparticles are almost spherical shapes of ~15 nm in diameter and showed the best sensing properties on CO gas out of three catalysts.