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졸-겔법에 의해 제조된 Al-Doped ZnO 박막의 후열처리 온도에 따른 전기 및 광학적 특성
고석배,최문순,고형덕,이충선,태원필,서수정,김용성,Ko, Seok-Bae,Choi, Moon-Sun,Ko, Hyungduk,Lee, Chung-Sun,Tai, Weon-Pil,Suh, Su-Jeong,Kim, Young-Sung 한국세라믹학회 2004 한국세라믹학회지 Vol.41 No.10
비등점이 낮은 용매인 isopropanol에 용질농도 0.7mol/$\iota$ Zn acetate를 용해시키고 dopant로 Al chloride를 첨가하여 균일하고 안정한 sol을 합성하였다. 졸-겔법에 의한 Al-doped ZnO(AZO) 박막의 제조시 $500\~700^{\circ}C$의 범위에서 후열처리 온도를 제어하여 박막의 전기 및 광학적 특성을 조사하였다. 후열처리 온도가 증가할수록 (002) 면으로의 c-축 결정배향성은 증가하였고, 박막 표면은 균일한 나노입자의 미세구조를 형성하였다. 광 투과도는 $650^{\circ}C$ 이하의 후열처리 온도에서 $86\%$이상이었으나, $700^{\circ}C$에서는 감소하였다. 박막의 전기 비저항 값은 $650^{\circ}C$ 이하에서 열처리 온도가 증가함에 따라 73에서 22$\Omega$-cm로 감소하였으나 $700^{\circ}C$에서 580$\Omega$-cm로 급격히 증가하였다. 후열처리 온도 $700^{\circ}C$에서 AZO 박막의 전기 및 광학적 특성의 열화는 XPS 분석결과, 박막 표면에 석출된 $Al_2O_3$ 상에 기인하였다. AZO 박막의 전기 및 광학적 특성 향상을 위한 최적의 후열처리 온도는 $600^{\circ}C$였다. Isopropanol of low boiling point was used as a solvent to prepare Al-doped ZnO(AZO) thin films. A homogeneous and stable sol was made from Zn acetate a solute whose mole concentration was 0.7mol/$\iota$ and Al chloride as a dopant. Al-doped ZnO thin films were prepared by sol-gel method as a function of post-heating temperature from 500 to $700^{\circ}C$ and the optical and electrical properties were investigated. The c-axis orientation along (002) plane was enhanced with the increasing of post-heating temperature and the surface morphology of the films showed a homogeneous and nano-sized microstructure. The optical transmittance of the films post-heated below $650^{\circ}C$ was over $86\%$, but decreased at $700^{\circ}C$. The electrical resistivity of the thin films decreased from 73 to 22 $\Omega$-cm as the post-heating temperature increased up to $650^{\circ}C$, but increased greatly to 580 $\Omega$-cm at $700^{\circ}C$. XPS analysis indicated that the deterioration of electrical and optical properties was attributed to the precipitation of $Al_2O_3$ phase on the surface of AZO thin film. This result suggests that the optimum post-heating temperature to improve electrical and optical properties is $600^{\circ}C$.
이호년,최문순 대한금속·재료학회 2013 ELECTRONIC MATERIALS LETTERS Vol.9 No.-
Dual-function photovoltaic organic light-emitting diodes (PVOEDs) have been investigated in this work. The PVOLEDs emit light when forward biased and generate electricity when backward biased. This dual function is based on the half-gap junction composed of 5,6,11,12-tetraphenylnaphthacene (rubrene) and C60. The device structure was optimized through experiments using various organic materials for the electron-transporting layer (ETL) and electron-injection layer (EIL). Through this work, 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP), C60 and LiF were selected as the ETL, electron-accepting layer and EIL, respectively. Using this device structure, we obtained a current efficiency of 0.27 cd/A for the light-emitting mode and a powerconversion efficiency of 1.95% for the photovoltaic mode.