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방산업체 연구개발 투자와 경영성과에 관한 연구 -협력 네트워크를 통한 조절효과를 중심으로-
조한철(Han-Chul Cho) 한국산학기술학회 2023 한국산학기술학회논문지 Vol.24 No.10
방위산업은 국가 발전의 양대 축인 ‘안보’와 ‘경제’를 견인하는 중요한 역할을 수행한다. 최근 우크라이나 전쟁 사례에서 보듯 양질의 무기체계가 적재적소에 보급되어 전투를 수행토록 지원하는 것은 무엇보다 중요하며 방위산업이 뒷받침되지 않으면 전쟁에서 승리하기 어렵다. 방위산업이 지속적으로 유지되기 위해서는 매출 확대를 통한 성장성이 담보되어야 하며 이를 위해 기술 경쟁력 확보가 관건이 될 것이다. 그러나 국내 방산기업은 대부분 중소 규모로서 대규모의 연구개발 투자가 어려운 실정이다. 따라서 기업 간 협력을 통해 기술개발과 관련된 지식, 정보 및 자원을 공유토록 함으로써 연구개발 투자에 대한 효과를 높일 수 있는 대책이 마련되어야 할 것이다. 실증분석 결과, 방산업체 간 협력 수준이 기업의 성장지표인 경영성과 확대에 조절적 효과가 있는 것으로 나타났다. 이를 바탕으로 정부의 방위산업 육성 정책이 방산기업 간 협력 강화에 중점을 두고 추진되어야 함을 제시하고자 한다. The defense industry plays an important role in driving two pillars of national development: security and economy. As seen in the case of the recent war in Ukraine, it is most important to supply high-quality weapon systems in the right place at the right time to support the fight, and it is difficult to win a war without the support of the defense industry. For the defense industry to be maintained continuously, growth must be secured through sales expansion, and securing technological competitiveness is the key to this. However, most domestic defense companies are small and medium-sized, making it difficult to invest in large-scale research and development (R&D). Therefore, it is necessary to prepare measures to increase the effectiveness of R&D investment by sharing knowledge, information, and resources related to technology development through cooperation between companies. As a result of an empirical analysis, it was found that the level of cooperation between defense companies has a moderating effect on the expansion of business performance, which is a company-growth index. Based on this, the governments defense-industry promotion policy should be promoted with an emphasis on strengthening cooperation among defense companies.
Post-CMP Cleaning에서 PVA 브러시 오염이 세정 효율에 미치는 영향
조한철,유민종,김석주,정해도,Cho, Han-Chul,Yuh, Min-Jong,Kim, Suk-Joo,Jeong, Hae-Do 한국전기전자재료학회 2009 전기전자재료학회논문지 Vol.22 No.2
PVA (polyvinyl alcohol) brush cleaning method is a typical cleaning method for semiconductor cleaning process especially post-CMP cleaning. PVA brush contacts with the wafer surface and abrasive particle, generating the contact rotational torque of the brush, which is the removal mechanism. The brush rotational torque can overcome theoretically the adhesion force generated between the abrasive particle and wafer by zeta potential. However, after CMP (chemical mechanical polishing) process, many particles remained on the wafer because the brush was contaminated in previous post-CMP cleaning step. The abrasive particle on the brush redeposits to the wafer. The level of the brush contamination increased according to the cleaning run time. After cleaning the brush, the level of wafer contamination dramatically decreased. Therefore, the brush cleanliness effect on the cleaning performance and it is important for the brush to be maintained clearly.
스윙 암 컨디셔너의 기구학적 해석을 통한 CMP 패드 프로파일 변화에 관한 연구
오지헌,이상직,이호준,조한철,이현섭,김형재,정해도,Oh, Ji-Heon,Lee, Sang-Jik,Lee, Ho-Jun,Cho, Han-Chul,Lee, Hyun-Seop,Kim, Hyoung-Jae,Jeong, Hae-Do 한국전기전자재료학회 2008 전기전자재료학회논문지 Vol.21 No.11
There are many factors to affect polishing performance normally in chemical mechanical polishing (CMP) process. One of the factors is a pad profile. A pad profile has not been considered as a significant factor. However, a pad profile is easily changed by conditioning process in CMP, and then changed pad profile affects polishing performance. Therefore, understanding how the pad profile is changed by conditioning process is very important. In this paper, through the simulation based on kinematic analysis, the variation of the pad profile was described in accordance with difference condition of conditioning process. A swing-arm type conditioner was applied in this simulation. A swing-arm type conditioner plays a role of generating asperities on pad surface. The conditions of conditioing process to get uniform removal were also investigated by comparing the simulation with the experiment.
김영민(Young-min Kim),조한철(Han-chul Cho),정해도(Haedo Jeong) 대한기계학회 2008 대한기계학회 춘추학술대회 Vol.2008 No.11
Cleaning is required following CMP (chemical mechanical planarization) to remove particles. The minimization of particle residue is required with each successive technology generation, and te cleaning of wafers becomes more complicated. In copper damascene process for interconnection structure, it utilizes 2-step CMP consists of Cu CMP and barrier CMP. Such a 2-steps CMP process leaves a lot of abrasive particles on the wafer surface, cleaning is required to remove abrasive particles. In this study, the buffing is performed various conditions as a cleaning process. The buffing process combined mechanical cleaning by friction between a wafer and a buffing pad and chemical cleaning by buffing solution consists of tetramethyl ammonium hydroxide(TMAH)/benzotriazole(BTA)
구리 CMP 후 연마입자 제거에 화학 기계적 세정의 효과
김영민(Young-min Kim),조한철(Han-chul Cho),정해도(Haedo Jeong) 대한기계학회 2009 大韓機械學會論文集A Vol.33 No.10
Cleaning is required following CMP (chemical mechanical planarization) to remove particles. The minimization of particle residue is required with each successive technology generation, and the cleaning of wafers becomes more complicated. In copper damascene process for interconnection structure, it utilizes 2-step CMP consists of Cu and barrier CMP. Such a 2-steps CMP process leaves a lot of abrasive particles on the wafer surface, cleaning is required to remove abrasive particles. In this study, the chemical mechanical cleaning(CMC) is performed various conditions as a cleaning process. The CMC process combined mechanical cleaning by friction between a wafer and a pad and chemical cleaning by CMC solution consists of tetramethyl ammonium hydroxide (TMAH) / benzotriazole (BTA). This paper studies the removal of abrasive on the Cu wafer and the cleaning efficiency of CMC process.
신운기,박선준,이현섭,정문기,이영균,이호준,김영민,조한철,주석배,정해도,Shin, Woon-Ki,Park, Sun-Joon,Lee, Hyun-Seop,Jeong, Moon-Ki,Lee, Young-Kyun,Lee, Ho-Jun,Kim, Young-Min,Cho, Han-Chul,Joo, Suk-Bae,Jeong, Hae-Do 한국전기전자재료학회 2011 전기전자재료학회논문지 Vol.24 No.1
Copper (Cu) had been attractive material due to its superior properties comparing to other metals such as aluminum or tungsten and considered as the best metal which can replace them as an interconnect metal in integrated circuits. CMP (Chemical Mechanical Polishing) technology enabled the production of excellent local and global planarization of microelectronic materials, which allow high resolution of photolithography process. Cu CMP is a complex removal process performed by chemical reaction and mechanical abrasion, which can make defects of its own such as a scratch, particle and dishing. The abrasive particles remain on the Cu surface, and become contaminations to make device yield and performance deteriorate. To remove the particle, buffing cleaning method used in post-CMP cleaning and buffing is the one of the most effective physical cleaning process. AE(Acoustic Emission) sensor was used to detect dynamic friction during the buffing process. When polishing is started, the sensor starts to be loaded and produces an electrical charge that is directly proportional to the applied force. Cleaning efficiency of Cu surface were measured by FE-SEM and AFM during the buffing process. The experimental result showed that particles removed with buffing process, it is possible to detect the particle removal efficiency through obtained signal by the AE sensor.