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송인성(In Sung Song),김정룡(Chung Yong Kim),이영상(Yung Sang Lee),백승운(Seung Woon Paik),김해련(Hae Ryun Kim),유병철(Pyung Chul Yu),이효석(Hyo Suck Lee),최규완(Kyu Wan Choi) 대한소화기학회 1985 대한소화기학회지 Vol.17 No.1
N/A A case of congenital pyloric duplication, in 30 year old man, was diagnosed by fiberoptic gastroscopy, UGIS, and histologic examination of pathologic specimen. This case had incomplete diverticular form of pyloric duplication, but had epithelial lining of the gastric mucosa and proper smooth muscle, and was associated with ectopic pancreatic tissue on adjacent gastric wall. The relevant literatures on the subject were reviewed.
HVPE 방법에 의한 금속 화합물 탄소체 기판 위의 GaN 성장
김지영,이강석,박민아,신민정,이삼녕,양민,안형수,유영문,김석환,이효석,강희신,전헌수,Kim, Ji Young,Lee, Gang Seok,Park, Min Ah,Shin, Min Jeong,Yi, Sam Nyung,Yang, Min,Ahn, Hyung Soo,Yu, Young Moon,Kim, Suck-Whan,Lee, Hyo Suk,Kang, Hee Shi 한국결정성장학회 2013 韓國結晶成長學會誌 Vol.23 No.5
GaN는 대표적인 III-V족 질화물반도체로 주로 값싸고 다루기 쉬운 사파이어 기판 위에 성장된다. 하지만 사파이어 기판은 부도체이며, GaN과의 격자부정합을 일으키고 열전도도 또한 낮은 기판으로 알려져 있다. 본 논문에서는 방열기능과 열 전기전도도가 뛰어난 금속 화합물 탄소체 기판 위에 poly GaN epilayer를 HVPE법으로 성장시켜보았다. 비정질의 금속 화합물 탄소체 기판위에 성장되는 GaN epilayer의 성장메카니즘을 관찰하였다. GaN epilayer의 성장을 위해 HCl과 $NH_3$를 흘려주었다. 성장하기 위해 source zone과 growth zone의 온도는 각각 $850^{\circ}C$와 $1090^{\circ}C$로 설정했다. 성장이 끝난 샘플은 SEM, EDS, XRD측정을 통해 분석하였다. The GaN layer was typical III-V nitride semiconductor and was grown on the sapphire substrate which cheap and convenient. However, sapphire substrate is non-conductivity, low thermal conductivity and has large lattice mismatch with the GaN layer. In this paper, the poly GaN epilayer was grown by HVPE on the metallic compound graphite substrate with good heat dissipation, high thermal and electrical conductivity. We tried to observe the growth mechanism of the GaN epilayer grown on the amorphous metallic compound graphite substrate. The HCl and $NH_3$ gas were flowed to grow the GaN epilayer. The temperature of source zone and growth zone in the HVPE system was set at $850^{\circ}C$ and $1090^{\circ}C$, respectively. The GaN epilayer grown on the metallic compound graphite substrate was observed by SEM, EDS, XRD measurement.
송인성,김정룡,박용현,윤용범,이효석,유권 대한소화기내시경학회 1988 Clinical Endoscopy Vol.8 No.1
The Duodenal diverticulum is the rare cause of the common bile duct obstruction. We experienced a case of the diverticulum of the second portion of duodenum in a 59-year-old male, who complained recurrent attacks of right upper abdominal pain and fever since 16 months prior to admission. Duodenoscopic finding and UGI study revealed a typical duodenal diverticulum just side to the papilla of Vater. Diverticulectomy and cholecystectomy was performed and after than, he has been free front above mentioned symptoms. We reported a case of duodenal diverticulum which caused recurrent common bile duct obstruction.