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SnO2 과 Pt 를 첨가한 WO3 후막센서의 제조 및 NOx 감응 특성
이대식,한상도,박기배,심규성,이덕동,손영목 ( D . S . Lee,S . D . Han,K . B . Park,K . S . Sim,D . D . Lee,Y . M . Son ) 한국센서학회 1996 센서학회지 Vol.5 No.5
highly sensitive WO₃ doped with SnO₂ and Pt thick-film sensors for NOx gas were fabricated. The sensors had a maximum sensitivity at operating temperature of 250℃, but the optimum operation temperature, considering recovery desorption time, was at 330℃. These sensors improved sensitivity, response and recovery time, selectivity and stability, as compared to WO₃ sensors. The good linearity of sensitivity as a function of the gas concentration exhibited the possibility to be used for concentration meter.
신동원,이상태,전희권,이덕동,임정옥,허증수,Shin, D.W.,Lee, S.T.,Jun, H.K.,Lee, D.D.,Lim, J.O.,Huh, J.S. 한국재료학회 2003 한국재료학회지 Vol.13 No.2
Nano-sized powders of Indium Tin Oxide(ITO) were synthesized by a coprecipitation method. In order to investigate the gas sensing characteristics in the nanocrystalline ITO thick films with various particle sizes, ITO powders with the average particle diameter of 15, 30, and 70 nm respectively were synthesized. And the sensitivity of ITO thick films was measured upon exposure to a target gas($C_2$$H_{5}$ /OH) and some other Volatile Organic Compounds(VOCs), such as, toluene, methanol, benzene, chloroform. As a result, ITO thick films had high sensitivity for ethanol and higher sensitivity with smaller particle size.
전춘배,박효덕,최동한,이덕동 ( C . B . Jun,H . D . Park,D . H . Choi,D . D . Lee ) 한국센서학회 1994 센서학회지 Vol.3 No.1
112 rot. x-cut LiTaO₃ wafer was used as the substrate of SAW gas sensor. Dual delay line SAW device with IDTs ,which consist of the reference delay line and the sensing delay line was fabricated using photolithigraphy. Each IDTs had 10 forger pairs and finger spacing is 10 microns. One delay line channel is the reference, while the second is the sensing channel with Pb-phthalocyanine film in the propagation path. Pb-phthalocyanine film which is p-type organic semiconductor was evaporated in 10^(-5) torr vacuum using shadow mask selectively. Dual delay line oscillator was constructed by using the rf amplifier and AGC. Frequency of the IDTs had the range of 87-89 MHz oscillation frequency. Oscillation frequency shifts were investigated as a function of the temperature and the concentration of NO₂ gas.
Fe<sub>2</sub>O<sub>3</sub>후막을 이용한 alcohol sensor 제작 및 감응특성
이윤수,송갑득,이상문,심창현,최낙진,주병수,이덕동,허증수,Lee, Y.S.,Song, K.D.,Lee, S.M.,Shim, C.H.,Choi, N.J.,Joo, B.S.,Lee, D.D.,Huh, J.S. 한국센서학회 2002 센서학회지 Vol.11 No.2
저비용과 휴대성을 고려한 알코올 경보기의 제작을 위해 동작온도가 낮고 감도가 높은 반도체 가스 센서를 제작하였다. $Fe_2O_3$에 금속 산화물인 $MoO_3$, $V_2O_5$, $TiO_2$, 그리고 CdO 등을 첨가하여 스크린 프린팅법을 이용하여 센서를 제작하였다. 센서의 전기적 안정성을 위하여 질소 분위기에서 $700^{\circ}C$, 2시간 동안 열처리를 하였다. 알코올, 탄화수소계 가스와 담배연기 등을 사용하여 센서의 가스 감도를 조사하였다. $V_2O_5$를 첨가한 센서가 알코올 가스 1,000 ppm에 대해서 약 $80{\sim}90%$의 감도를 보이며, 타 가스에 대한 선택성도 가짐을 알 수 있었다. 제작된 센서와 PIC-chip을 사용하여 휴대 가능한 경보기를 제작할 수 있었다. In order to get low cost and portability, semiconductor gas sensor need to have low operating temperature and high sensitivity. $Fe_2O_3$ based sensors which were doped with metal oxide catalysts($MoO_3$, $V_2O_5$, $TiO_2$, and CdO) were fabricated by screen printing method. To improve electrical stability of sensors, the $Fe_2O_3$ sensors were annealed in $N_2$ at $700^{\circ}C$ for 2 hours. The $V_2O_5$ doped $Fe_2O_3$ sensor showed about $80{\sim}90%$ sensitivity at alcohol 1,000 ppm and have good selectivity to hydrocarbon gas and tobacco odors. The fabricated sensor and PIC-chip were employed for portable alarm system.
스크린 인쇄법을 이용한 NASICON 후막 SO<sub>2</sub>가스 센서의 제조 및 특성
배재철,이상태,전희권,방영일,이덕동,허증수,Bae, J.C.,Lee, S.T.,Jun, H.K.,Bang, Y.I.,Lee, D.D.,Huh, J.S. 한국재료학회 2003 한국재료학회지 Vol.13 No.2
The thick film type sensor having Pt/Na Super Ionic Conductor(NASICON) solid electrolyte/Pt/$Na_2$$SO_4$/Pt catalyst system for $SO_2$gas was fabricated by screen-print method. The phase of Na Super Ionic Conductor solid electrolyte sintered at different temperature of 1050, 1150,$ 1250^{\circ}C$ and for different time of 1.5, 2.5, 3.5 hr were investigated by XRD. The Electromotive Force variation of the sensor with $SO_2$concentrations and operating temperatures were investigated. The major phase of Na Super Ionic Conductor film sintered at 115$0^{\circ}C$ for 3.5 hr was sodium zirconium silicon phosphate($Na_3$Zr$_2$$Si_2$PO$_{12}$). The Nernst's slope of Na Super Ionic Conductor sensor for $SO_2$gas with the variation of concentration from 10 to 100 ppm was 167.14 ㎷/decade at the operating temperature of $500 ^{\circ}C$. The increase of oxygen partial pressure was not affected to the variation of Nernst's slope.e.
SnO<sub>2</sub>센서의 ZnO 첨가량에 따른 di(propylene glycol) methylether (DPGME)에 대한 반응 특성
차건영,백원우,윤기열,이상태,최낙진,이덕동,허증수,Cha G. Y,Baek W. W,Yun K. Y,Lee S. T,Choi N. J,Lee D. D,Huh J. S 한국재료학회 2004 한국재료학회지 Vol.14 No.3
Respectively the powder made of ZnO added $SnO_2$ was prepared by coprecipitation method and the thick film gas sensor was fabricated by screen-printing technique, The morphology and phase of the powder and film was investigated by SEM and XRD. The specific area of the particle was linearly increased with ZnO contents. Target gas was di(propylene glycol) methylether ($CH_3$($OC_3$$H_{6}$ )$_2$OH, DPGME), which is simulant gas of blister gas. The gas sensing characteristics for DPGME were examined with flow type measurement system and the concentrations of target gas were controlled from 500 ppb to 1500 ppb. ZnO (2 wt%) added $SnO_2$ showed maximum sensitivity to DPGME at $300^{\circ}C$.
Electrochromic 막의 특성과 물질이동 방지막의 효과에 대한 연구
황하룡(H. R. Hwang),백지흠(J. H. Paik),허증수(J. S. Huh),이덕동(D. D. Lee),임정옥(J. O. Lim),장동식(D. S. Jang) 한국진공학회(ASCT) 2000 Applied Science and Convergence Technology Vol.9 No.3
졸겔법 및 진공증착법으로 WO₃ 및 V₂O_5 박막을 제조하고, 리튬이온을 이용하여 전기변색 소자를 제작한 후 광학적 특성을 조사하였다. 측정결과 졸겔법으로 제조된 WO₃ 박막과 V₂O_5 박막을 수증기 분위기에서 500℃로 1시간 열처리한 경우 가장 우수한 투과율 변화량을 나타내었다. 정ㆍ역방향 동작을 거듭할수록 WO₃ 막의 텅스텐과 ITO막의 인듐이 상호 확산하는 것을 관찰할 수 있었으며, 이를 방지하기 위해 수백 Å의 텅스텐 박막을 ITO와 WO₃막 사이에 삽입한 결과, cyclic voltamogram의 peak의 감소량이 1/10 이하로 감소하였으며, 리튬이온의 흐름에 의한 인듐과 텅스텐의 이 동을 효과적으로 방지할 수 있었다. After manufacturing the electrochromic device (structure: ITO glass/WO₃/electrolyte/V₂O_5/ITO glass) by using of sol-gel process and evaporation, optical properties and migration effect were investigated. The result shows that electrochromic device with heat treated (at water vapor ambient, 500℃, 1 hour) sol-gel coated WO₃ and V₂O_5 films had the highest transmittance variance. Electrochromic devices are based on the reversible insertion of guest atoms into structure of the host solid. But after cyclic operation, we find that the tungsten in WO₃ film and the indium in ITO film were migrated with each other. For the purpose of blocking migration, tungsten barrier film is inserted between ITO and WO₃ film. The result of cyclic voltamogram and the Auger depth profile show that the peak separation of cyclic voltamogram is reduced to below 1/10 and we could effectively block the indium and tungsten migration that is caused by flow of Li ions.