http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
원자층 증착법으로 성장한 HfO<sub>2</sub> 박막의 제조
김희철,김민완,김형수,김혁종,손우근,정봉교,김석환,이상우,최병호,Kim Hie-Chul,Kim Min-Wan,Kim Hyung-Su,Kim Hyug-Jong,Sohn Woo-Keun,Jeong Bong-Kyo,Kim Suk-Whan,Lee Sang-Woo,Choi Byung-Ho 한국재료학회 2005 한국재료학회지 Vol.15 No.4
The growth of hafnium oxide thin films by atomic layer deposition was investigated in the temperature range of $175-350^{\circ}C$ using $Hf[N(CH_3)_2]_4\;and\;O_2$ as precursors. A self-limiting growth of $0.6\AA/cycle$ was achieved at the substrate temperature of $240-280^{\circ}C$. The films were amorphous and very smooth (0.76-0.80 nm) as examined by X-ray diffractometer and atomic force microscopy, respectively. X-ray photoelectron spectroscopy analysis showed that the films grown at $300^{\circ}C$ was almost stoichiometric. Electrical measurements performed on $MoW/HfO_2$(20 nm)/Si MOS structures exhibited high dielectric constant$(\~17)$ and a remarkably low leakage current density of at an applied field of $1.5-6.2\times10^{-7}A/cm^2$ MV/cm, probably due to the stoichiometry of the films.