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      • 서울지하철 9호선의 분쟁사례 분석을 통한 수익형 민간투자사업 프로그램의 개선 방안에 대한 연구

        박영빈,김대철 한국프로젝트경영학회 2013 한국프로젝트경영연구 Vol.3 No.1

        1990년도부터 본격적으로 활성화된 국내의 민간투자사업은 2011년 현재 전체 재정사업의 20%에 달할 정도로 그 규모가 커졌다. 정부는 한정된 국가 재원의 배분 문제를 효율적으로 해결하고 사회기반시설 건설의 재원을 확충하기 위한 해결 방안으로 민간투자사업을 활성화시켰지만, 부정확한 교통수요 예측, 과도한 최소운영수입, 시설물들의 높은 사용료로 등으로 인한 문제를 비롯하여 여러 가지 문제점들을 함께 발생시켰다. 본 연구에서는 국내에서 진행되고 있는 민간투자사업들의 문제점들과 그 원인을 분석해보고, 사회간접자본의 공공성 측면에서 민간투자사업의 개선방안을 제시해 보고자 서울지하철 9호선의 분쟁 사례로부터 해당 프로젝트의 사업 계획, 타당성 분석, 계약, 협약, 자본구조 등을 분석하여 어떠한 문제점들이 있는지 파악하였으며, 나아가서 국내 민간투자사업이 공통적으로 내재하고 있는 문제점을 분석해보고 해결 방안을 모색해 보고자 하였다..

      • KCI등재

        텍스트 마이닝 기법을 이용한 ‘장애인’ 키워드 민원 데이터 분석 : 시각장애인을 중심으로

        박영빈,이정민,강동헌,은선덕,박지영 한국재활복지공학회 2022 재활복지공학회논문지 Vol.16 No.2

        Although the number of people with disabilities registered in Korea is increasing every year, continuous awareness improvement is needed to ensure the fundamental human rights of people with disabilities, which have been lowered due to social prejudice and discrimination against them. Therefore, this study analyzes civil complaint data with the keyword 'people with disabilities' and tries to identify the main inconveniences of the disabled and derive improvements. We collected complaints about 'people with disabilities' from November 1, 2018 to November 1, 2021 at the Anti-Corruption and Civil Rights Commission OPEN API and identified core complaints by implementing big data-based text mining and word cloud and network graphs. As a result of the analysis, 'braille marking' and 'height of curb that installed at the boundary between sidewalk and road' were deduced as significant inconveniences. In order to solve the inconveniences, it is considered that it is necessary to make it mandatory for indoor convenience facilities and medicines, to prevent damage to the Braille block due to the increase in the use of personal mobility devices such as electric kickboards, and to improve the sidewalk for the visually impaired. In addition, it is expected that positive policies to improve the quality of life of the disabled can be presented based on the inconveniences and needs of the disabled identified in this study.

      • KCI등재

        Preparation of High-Quality ZnO Nanorods by Electrodeposition Using a Rotating Cathode and Improvements in their UV Sensing Properties

        박영빈,임재영 대한화학회 2016 Bulletin of the Korean Chemical Society Vol.37 No.8

        In this study, we prepared ZnO nanorods on Si substrates by electrodeposition using a rotating cathode and investigated the effects of the rotating cathode on the properties of the electrodeposited ZnO nanorods and those of an ultraviolet (UV) detector based on ZnO nanorods. When the cathode was rotated at 250 rpm, the resulting ZnO nanorods exhibited improved vertical orientation, higher aspect ratio, and greater number density confirmed by scanning electron microscopy as well as improved directional growth along the (002) crystallographic plane. Furthermore, improved crystallinity was confirmed by X-ray diffraction and photoluminescence analyses. A UV detector based on these ZnO nanorods electrodeposited using the rotating cathode at 250 rpm showed faster photoresponse growth, faster and higher photosensitivity compared to a detector based on ZnO nanorods electrodeposited using a non-rotating cathode. This proposed method is suitable for growing dense and high-quality ZnO nanorods and should allow for the fabrication of fast-response UV detectors with high photosensitivities.

      • SCOPUSKCI등재

        마그네트론 코스퍼터링법으로 형성한 SiO<sub>2</sub>/Si 양자점 초격자 구조의 특성

        박영빈,김신호,하린,이현주,이정철,배종성,김양도,Park, Young-Bin,Kim, Shin-Ho,Ha, Rin,Lee, Hyun-Ju,Lee, Jung-Chul,Bae, Jong-Seong,Kim, Yang-Do 한국재료학회 2010 한국재료학회지 Vol.20 No.11

        Solar cells have been more intensely studied as part of the effort to find alternatives to fossil fuels as power sources. The progression of the first two generations of solar cells has seen a sacrifice of higher efficiency for more economic use of materials. The use of a single junction makes both these types of cells lose power in two major ways: by the non-absorption of incident light of energy below the band gap; and by the dissipation by heat loss of light energy in excess of the band gap. Therefore, multi junction solar cells have been proposed as a solution to this problem. However, the $1^{st}$ and $2^{nd}$ generation solar cells have efficiency limits because a photon makes just one electron-hole pair. Fabrication of all-silicon tandem cells using an Si quantum dot superlattice structure (QD SLS) is one possible suggestion. In this study, an $SiO_x$ matrix system was investigated and analyzed for potential use as an all-silicon multi-junction solar cell. Si quantum dots with a super lattice structure (Si QD SLS) were prepared by alternating deposition of Si rich oxide (SRO; $SiO_x$ (x = 0.8, 1.12)) and $SiO_2$ layers using RF magnetron co-sputtering and subsequent annealing at temperatures between 800 and $1,100^{\circ}C$ under nitrogen ambient. Annealing temperatures and times affected the formation of Si QDs in the SRO film. Fourier transform infrared spectroscopy (FTIR) spectra and x-ray photoelectron spectroscopy (XPS) revealed that nanocrystalline Si QDs started to precipitate after annealing at $1,100^{\circ}C$ for one hour. Transmission electron microscopy (TEM) images clearly showed SRO/$SiO_2$ SLS and Si QDs formation in each 4, 6, and 8 nm SRO layer after annealing at $1,100^{\circ}C$ for two hours. The systematic investigation of precipitation behavior of Si QDs in $SiO_2$ matrices is presented.

      • KCI등재

        Photoluminescence Studies of ZnO Films Fabricated by Using a Combination of a Hydrothermal Method and Plasma-assisted Molecular Beam Epitaxy Regrowth

        박영빈,김병규,임재영,남기웅,김소아람,이상헌,정재학 한국물리학회 2014 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.64 No.3

        ZnO films were deposited on Si (100) substrates by using a two-step growth process. In the firststep, ZnO nanorods were grown by using the hydrothermal method at 140 C for 5 min. In thesecond step, a ZnO amorphous layer was deposited on the ZnO nanorods by spin-coating. Aftercompletion of the growth process, the films were annealed at 800 C for 10 min, and a ZnO activelayer was deposited on top of the amorphous layer by using plasma-assisted molecular beam epitaxy. Further, temperature-dependent photoluminescence (PL) measurement were conducted to study theoptical properties of the prepared films. In the low-temperature PL spectra, emission peaks in thenear-band-edge region were observed at 3.370, 3.362, 3.347, 3.329, 3.317, 3.288, 3.263, 3.219, 3.191,and 3.116 eV; these peaks were attributed to free excitons, neutral donor bound excitons, neutralacceptor donor excitons, two electron satellites, and donor acceptor pairs, respectively. Thesepeaks were red-shifted, and their intensity decreased with increasing temperature. The bindingenergy of the donor was calculated as 43.1 meV by using the Haynes rule. Further, the valueand , factors in the equation for the energy of localized excitons of donors and acceptors wereobtained as 0.73 meV and 750 K, respectively, by fitting the free exciton (FX) peak according toVarshni’s equation. The full width at half-maximum of PL for the films was about 95.1 meV atroom temperature; moreover, the following values were obtained for the films by using theoreticalequations: the background impurity broadening, I0 = 62 meV, the parameter describing exciton-LO phonon interaction, ΙLO = 80 meV, LO phonon energy, ~!LO = 72 meV, and, the couplingstrength of an exciton-acoustic phonon interaction,ph = 0.087 meV/K Furthermore, the activationenergy was about 60.1 meV. ZnO films were deposited on Si (100) substrates by using a two-step growth process. In the firststep, ZnO nanorods were grown by using the hydrothermal method at 140 C for 5 min. In thesecond step, a ZnO amorphous layer was deposited on the ZnO nanorods by spin-coating. Aftercompletion of the growth process, the films were annealed at 800 C for 10 min, and a ZnO activelayer was deposited on top of the amorphous layer by using plasma-assisted molecular beam epitaxy. Further, temperature-dependent photoluminescence (PL) measurement were conducted to study theoptical properties of the prepared films. In the low-temperature PL spectra, emission peaks in thenear-band-edge region were observed at 3.370, 3.362, 3.347, 3.329, 3.317, 3.288, 3.263, 3.219, 3.191,and 3.116 eV; these peaks were attributed to free excitons, neutral donor bound excitons, neutralacceptor donor excitons, two electron satellites, and donor acceptor pairs, respectively. Thesepeaks were red-shifted, and their intensity decreased with increasing temperature. The bindingenergy of the donor was calculated as 43.1 meV by using the Haynes rule. Further, the valueand , factors in the equation for the energy of localized excitons of donors and acceptors wereobtained as 0.73 meV and 750 K, respectively, by fitting the free exciton (FX) peak according toVarshni’s equation. The full width at half-maximum of PL for the films was about 95.1 meV atroom temperature; moreover, the following values were obtained for the films by using theoreticalequations: the background impurity broadening, I0 = 62 meV, the parameter describing exciton-LO phonon interaction, ILO = 80 meV, LO phonon energy, ~!LO = 72 meV, and, the couplingstrength of an exciton-acoustic phonon interaction,ph = 0.087 meV/K Furthermore, the activationenergy was about 60.1 meV.

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