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Stability of Solution-processed ZrInZnO Thin-film Transistors under Gate Bias Stress
정태훈,김현재,김시준,윤두현,정웅희,김동림,임현수 한국물리학회 2011 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.59 No.2
The effects of bias stress solution-processed ZrInZnO (ZIZO) thin-film transistors (TFTs) for various annealing temperatures and gate insulators were investigated under gate bias stress. In the as-fabricated ZIZO TFTs with different gate insulators, higher mobility is achieved with SiNx, but superior subthreshold swing (S.S) is achieved with SiO_2 because the gate insulator has different k value and quality. After 1000 s of positive and negative gate bias stresses, the threshold voltages of the ZIZO TFTs with SiNx and SiO_2 gate insulators shifted dramatically while variations in the S.S and the mobility changed slightly. This suggests that electrons or holes are temporarily trapped/detrapped at the existing traps in the gate insulator, semiconductor, or channel/insulator.
정태훈,M.S. Kang,C.J. Chung,Y. Kim 한국물리학회 2009 Current Applied Physics Vol.9 No.3
Thin oxide films are deposited from tetramethoxysilane (TMOS) with some addition of O2 (or N2O) gas in inductively coupled plasma (ICP) discharges supplied with radio frequency power. The effects of various deposition parameters such as O2 (or N2O) partial pressure ratio, ICP power, and gas pressure on the growth characteristics and properties of the deposited films are investigated. The chemical bonding states of deposited films are analyzed by Fourier transform infrared spectroscopy, and the deposition rate and optical properties are determined from in-situ ellipsometry. For the TMOS=O2 case, the deposition rate increases with increasing ICP power. Larger oxygen partial pressure ratio decreases the deposition rate. For the TMOS=N2O case, higher N2O fraction results in a decrease in nitrogen content in the gasphase and in the deposited films, thereby decreasing the refractive index. As the gas pressure increases, the deposition rate increases first and saturates later. Capacitance–voltage measurements are performed in MOS capacitors to obtain the electrical properties of the deposited films. The interface trap density is observed to decrease with increasing ICP power.
Choosing Optimal STR Markers for Quality Assurance of Distributed Biomaterials in Biobanking
정태훈,이희정,이미희,전재필,김기상,한복기 한국유전체학회 2009 Genomics & informatics Vol.7 No.1
The quality assurance (QA) is of utmost importance in biobanks when archived biomaterials are distributed to biomedical researchers. For sample authentication and cross-contamination detection, the two fundamental elements of QA, STR genotyping is usually utilized. However, the incorporated number of STR markers is highly redundant for biobanking purposes, resulting in time and cost inefficiency. An index to measure the cross-contamination detection capability of an STR marker, the mixture probability (MP), was developed. MP as well as other forensic parameters for STR markers was validated using STR genotyping data on 2328 normal Koreans with the commercial AmpFlSTR kit. For Koreans, 7 STR marker (D2S1338, FGA, D18S51, D8S1179, D13S317, D21S11, vWA) set was sufficient to provide discrimination power of ∼10−10 and cross-contamination detection probability of ∼1. Interestingly, similar marker sets were obtained from African Americans, Caucasian Americans, and Hispanic Americans under the same level of discrimination power. Only a small subset of commonly used STR markers is sufficient for QA purposes in biobanks. A procedure for selecting optimal STR markers is outlined using STR genotyping results from normal Korean population.
정태훈 한국공작기계학회 2004 한국공작기계학회 추계학술대회논문집 Vol.2004 No.-
In press forming of sheet metals, the material sheet is usually subjected to very large plastic strain under in-plane stressing. Moreover, the sheet also very often is subjected to out-of-plane compressive force between tools such as the upper and lower dies, the blank holder and the die, and so forth. In this paper, it is clearly demonstrated theoretically that out-of-plane stress may notably raise the forming limit strain and thus it can be effectively utilized to avoid earlier fracture of the sheet in press forming.
정태훈 한국은행 2007 經濟分析 Vol.13 No.1
이 논문은 멀지 않은 장래에 큰 마이너스 경제적 충격이 발생하리라고 예상되었을 때, 중앙은행이 통화정책을 어떻게 수행해야 하는가에 대해서 분석하고 있다. 이에 대한 답을 구하기 위해서 중앙은행의 최적화 문제를 푼 결과, 금리의 하방제약을 감안하는 경우 미래의 충격발생 가능성으로 인해 현재의 통화정책이 변경되어야 함을 알게 되었다. 하지만 이러한 의미에서의 선제적 통화정책이 반드시 필요한 것은 아니다. 재량해의 경우에는 반드시 선제적으로 금리를 낮출 필요가 있지만, 공약해의 경우에는 경제를 구성하는 구조방정식의 파라메터의 크기와 장래에 발생하리라 예상되는 마이너스 충격의 크기, 그리고 평상시에 목표로 하고 있는 인플레이션 목표치에 의존하게 된다. This paper studies the necessity of preemptive monetary policy in an economy where an adverse shock is expected to occur in thenear future. To address this question, after clarifying the definition of 'preemptiveness', we solve the optimization problem. We find that a zero interest rate bound causes the central bank to conduct monetary policy preemptively. However, such preemptive action is not always needed. Although the interest rate needs to be set preemptively in a discretion solution, the interest rate in a commitment solution depends on the structural parameters of economic models, the size of adverse shocks in the near future, and the level of the inflation target.