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왕진석 충남대학교 공업교육연구소 1985 論文集 Vol.8 No.1
Ion beam etching of silicon with N₂and Ar gas has been found to cause the band edge to bend downward near the surface of p-type silicon. Rectifying, rather than ohmic contacts are obtained on p-type silicon. These resalts are to be caused by ion beam etching of silicon. An annealing study revealed that that the damage can be annealed out at relatively high temperature.
왕진석 충남대학교 공업교육연구소 1982 論文集 Vol.5 No.1
This paper deals with electrical and optical properties of ZnO thin films and show that ZnO films deposited by rf sputtering can be brought almost within the desired conductivity range for opto-electronic devices. The resistivity of ZnO film is about 10^-2Ωcm and transmission over visible range is about 80%.
정신분열병에 대한 Risperidone의 효과 및 안전성에 관하여
신석철,왕성근,지익성,이선우,이규광,이봉희,이진영,황선희,신용재,배경도,김정란 충남대학교 의과대학 지역사회의학연구소 1997 충남의대잡지 Vol.24 No.1
In order to evaluate the efficacy and safety of risperidone, 10 patients with chronic schizophrenia were examined for 8 weeks in a silgle-open study. After the wash-out period of 1 week, risperidone was administered. Efficacy was evaluated by means of Positive and Negative syndrome Scale for Schizophernia(PANSS) and Clinical Global Impression(CGI). Safety assessment included the Extrapyramidal Symptom Rating Scale(ESRS), vital signs, body weight, ECG, and laboratory tests. The results were as follows 1) On the PANSS total score, there was significant improvement of total score after 1 week (P<.05) of administratiom. 2) On the PANSS positive and negative subscal, there were significant improvement of posotive and negative scores after 2 weeks (P<.05) of administration. 3) On the PANSS general psychopatholgy subscals, there were significant improvement of general psychopathologyscores after 1 week (P<.05) of administratiom. 4) On the CGI, there was significant decreasement of clinical impression of severity of schizophrenia score after 2 week (P<.05) of administration. 5) A statistically significant increase in body weight (P<.05) was observed after 8 weeks of administration. 6) EPS reached the peak at the end of the 1st week of administration of risperidone (11.8± 24.25) but they were easily relieved by addition of benztropine and clonazepam. There was not significant change in laboratory tests, vital sign, ECG after 8 weeks of administration. These results suggest that Risperidone is an effective antipsychotics and clinically safe except for increased body weight in chronic schizophrenia.
오세진,박광준,윤석왕 성균관대학교 기초과학연구소 1987 論文集 Vol.38 No.1
The acoustic properties of 2 kHz difference frequency wave generated from a parametric acoustic array in air were experimentally studied in an anechoic chamber. The mean primary frequency is 17 kHz. To eliminate pseudosound of the difference frequency produced directly by the primary waves at the microphone face, an acoustic filter was used for the experiment. The sidelobeless narrow beam of the difference frequency sound shows that a parametric acoustic array is one of the most feasible research tools for the study of scattering and target strength.
朴昌燁,王鎭錫 연세대학교 산업기술연구소 1981 논문집 Vol.13 No.1
Recently, heterojunction solar cells with a conducting transparent film (SnO₂, In₂O₃ or SnO₂/In₂O₃ mixtures) on silicon have been reported by many investigators. These heterojunction solars cells offer the possibility of fabrication of low cost solar cells with performance characteristic suitable for large scale terrestrial applications. The conducting transparent film permits the tranmission of solar radiation directly to the active region with little or no attenuation. Here, after the SnO₂ film was deposited by electron beam evaporation upon n-Si wafers and slide glasses, the cell was heated in air at 280-360[℃] respectively for 1 hour. The SnO₂ film is about 1000[Å] thick. Depending upon temperature of heating, the cell's final efficiency, short circuit currentr, open circuit voltage, and fill factor was varied widely. The sheet resistance was increased in the 260-280[℃] temperature range and decreased with temperature increased above 280[℃]. % transmittance of SnO₂ film is increased by 10[%] after heat treatment in air. The spectral response spreads from 3900[Å] to 9000[Å] and this range is wider than that of commercial silicon solar cells. Voc, Isc, FF and η of the device annealed in air 320[℃] are 0,4[V], 20[mA/cm²] 0.65, 5.2[%] respectively.
金度宇,王鎭錫 忠南大學校 産業技術硏究所 1994 산업기술연구논문집 Vol.9 No.2
Transparent and conductive In₂O₃thin films were fabricated by activated reactive evaporation. In order to characterise the films, both electrical resistivity and transparency as a function of wave length were measured. In addition, the XRD was performed to investigate the crystal structure of the films. The electrical resistivity of Sn-doped In₂O₃thin films was found to be lower than those of pure In₂O₃.
朴興秀,尹錫旺,李聖壽,朴光俊,吳世珍 성균관대학교 기초과학연구소 1986 論文集 Vol.37 No.1
An anechoic chamber was constructed to make to condition of acoustic free field at the Department of Physics, Sung Kyun Kwan University. In this paper the criteria for the design and construction of the anechoic chamber are described. 48cm long wedges of density 15.3kg/㎥ glasswool attached to the 40×20×20㎤ base were used for the lining of anechoic chamber with the cutoff frequency of 125Hz. The interior space of the chamber is 3.56m long, 3.38m wide and 2.37m high.
박경희,안순의,구경완,왕진석 충남대학교 산업기술연구소 2000 산업기술연구논문집 Vol.15 No.2
This paper shows experimentally that oxide layer on the p-type Si-substrate can grow at low temperature(500℃∼600℃) using high pressure water vapor system. As the result of experiment, oxide layer growth rate is about 0.19Å/min at 500℃, 0.43Å/min at 550℃, 1.2Å/min at 600℃ respectively. So, we know oxide layer growth follows reaction-controlled mechanism in given temperature range. Consequently, granting that oxide layer growth rate increases linearly to temperature over 600℃, we can expect oxide growth rate is 5.2Å/min at 1000℃. High pressure oxidation of silicon is particularly attractive for the thick oxidation of power MOSFET, because thermal oxide layers can grow at relatively low temperature in run times comparable to typical high-temperature. 1 atm conditions. In the condition of higher-temperature and high-pressure steam oxidation. the oxidation time is reduced significantly.
Wang, Qiulai,Wang, Yue,Qi, Yuping,Wang, Xiangdong,Choh, Suk-Joo,Lee, Dong-Chan,Lee, Dong-Jin Taylor Francis 2018 Alcheringa Vol.42 No.2
<P>Six conodont and one fusuline zones are recognized on basis of a total of 25 conodont and 13 fusuline species (including seven unidentified species or species given with cf. or aff. in total) from the Bamchi Formation, Yeongwol, Korea. The conodont zones include the Streptognathodus bellus, S. isolatus, S. cristellaris, S. sigmoidalis, S. fusus and S. barskovi zones in ascending order, which can be correlated with the conodont zones spanning the uppermost Gzhelian to Asselian Age of the Permian globally. The fusuline zone is named the Rugosofusulina complicata-Pseudoschwagerina paraborealis zone. The co-occurrence of the conodont Streptognathodus isolatus (the Global Boundary Stratotype Section and Point index for the base of Permian) and Pseudoschwagerina (a Permian inflated fusuline) indicates that the Carboniferous-Permian boundary can be placed in the lower part of the Bamchi Formation in South Korea.</P>