http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
Aspergillus fumigatus에 대한 단핵구의 항진균 작용에서 Interleukin-15의 역할
조정호,장경희,김효열,송영구,김창오,박윤수,홍성관,허애정,염준섭,김준명 대한의진균학회 2001 대한의진균학회지 Vol.6 No.2
Background : Despite recent advances in antifungal chemotherapy, invasive aspergillosis remains an important cause of morbidity and mortality in immunocompromised patients. Interleukin-15 (IL-15) is a cytokine that is known to enhance antifungal activities of monocytes against Candida albicans. Objective: The purpose of this study is to investigate the potentials of IL-15 to enhance antifungal activities of monocytes against Aspergillus fumigatus. Methods: Peripheral blood monocytes from healthy adults were incubated with 0,1,10,100 ng/ml of IL-15 for 1, 2, and 4 days. Then, the ability of IL-15 to elicit the production of superoxide anion, the damage of hyphae by 3-(4,5-dimethylthiazol-2-yl)-2,5-diphenyletrazolium bromide assay, and the killing ability of Aspergillus fumigatus conidia was investigated. Results: Incubation of peripheral blood monocytes with 100 ng/ml of IL-15 enhanced hyphal damage after 2 days (p<0.05), condicidal activity from the first day (p<0.05), and increased the production of superoxide anion (O2-) in response to phorbol myristate acetate. Conclusion: Our results indicate that IL-15 augments the microbicidal activity of human monocytes against Aspergillus fumigatus .[Kor J Med Mycol 6(2): 64-69]
Comparison of IOL powers by corrected method in eyes after PRK and LASIK
O Sub Koo,June Gone Kim,Byung Joo Song 대한안과학회 2002 Korean Journal of Ophthalmology Vol.16 No.1
The purpose of this study is to compare, by statistical analysis, intraocular lens (IOL) powers by SRK/T formula using autorefractokeratometer-measured keratometric (K) values (SRK/T-ARK-mK), by SRK/T formula using refraction-derived K values (SRK/T-R-dK), and by refraction corrected method (RCM), in eyes treated with photorefractive keratectomy (PRK) and laser in situ keratomileusis (LASIK) for myopia. Thirty-eight consecutive eyes of 23 patients with PRK for mild to moderate myopia and 35 consecutive eyes of 25 patients with LASIK for high myopia were followed up for more than 1 year. In the two groups, IOL powers by SRK/T-ARK-mK, by SRK/T-R-dK, and by RCM were compared by statistical analysis. In PRK group, the mean value of IOL powers by RCM was statistically higher than that obtained by the other two methods (p <; 0.05), while there was no significant statistical difference between the mean values of IOL powers by SRK/T-ARK-mK and by SRK/T-R-dK (p > 0.05). However, in LASIK group, the mean values of IOL powers by RCM and by SRK/T-R-dK, which did not differ statistically (p > 0.05), were both statistically higher than that by SRK/T-ARK-mK (p < 0.05). In conclusion, there is a statistical difference in IOL powers by the methods used for IOL calculation, as there is according to the level of myopia in patients with PRK and LASIK treatment. We suggest that, in IOL power calculation in eyes with previous corneal refractive surgery, correction methods such as RCM and SRK/T-R-dK are more effective at higher levels of myopia.
n-GaN/vanadium-based Ohmic 접촉 형성
송준오,임동석,김상호,성태연,Song, June-O,Leem, Dong-Seok,Kim, Sang-Ho,Seong, Tae-Yeon 한국재료학회 2003 한국재료학회지 Vol.13 No.9
We investigate vanadium (V)-based Ohmic contacts on n-GaN ($N_{d}$=$2.0${\times}$10^{18}$ $cm^{-3}$ ) as a function of annealing temperature. It is shown that the V (60 nm) contacts become Ohmic with specific contact resistances of $10^{-3}$ $- 10^{-4}$ Ω$\textrm{cm}^2$ upon annealing at 650 and $850^{\circ}C$. The V(20 nm)/Ti(60 nm)/Au(20 nm)contacts produce very low specific contact resistances of $2.2 ${\times}$ 10^{-5}$ and$ 4.0${\times}$10^{-6}$ Ω$\textrm{cm}^2$ when annealed at 650 and $850{\circ}C$, respectively. A comparison shows that the use of the overlayers (Ti/Au) is very effective in improving Ohmic property. Based on the current-voltage measurement, Auger electron spectroscopy, glancing angle X-ray diffraction, and X-ray photoemission spectroscopy results, the possible mechanisms for the annealing temperature dependence of the Ohmic behavior of the V-based contacts are described and discussed.d.