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PDM에서 XML(eXtensible Markup Language)을 활용한 전자카탈로그 시스템 개발
추헌진,이건상,이강수 한국경영과학회 2001 한국경영과학회 학술대회논문집 Vol.- No.1(2)
As E-commerce has been brisk, Electronic Catalo very important because it is core of E-comm However to make E-Catalog they usually use diffe formats each other. So it is hard to make exc information with other E-catalogs or just show metadata in the search field. For solving that problem and middle tire of exchange information, is not only powerful tool to make it easy that p but useful method to search data on stru information with XML. In this paper, we propose to develop Electronic C for use product structure and configuration mana system using XML in the PDM
Propylthiouracil 투여에 의한 갑상선 기능저하 흰쥐 조직에서 알코올 탈수소효소 활성의 변화
백상현,김동선,이창범,박용수,안유헌,김태화,기춘석,강주섭 한양대학교 의과대학 2001 한양의대 학술지 Vol.21 No.2
Background: Thyroid hormone has been known to affect hepatic alcohol dehydrogenase (ADH) activity. Although the liver is the principal site of ethanol metabolism, stomach is also responsible in part for ethanol oxidation. The effects of thyroid hormone on ADH activity in gastric mucosa and other tissues of rats had not been previously examined. Method: The effects of thyroid hormone on liver, stomach, lung, and kidney ADH activities (nM of NADH/min/mg of cytosolic protein) have been investigated in male Sprague Dawley rats treated with propylthiouracil (50 mg/kg) for 14 days. Results: Whereas hepatic ADH activities were not changed by treatment with PTU(42.9(8.6 vs 45.2 (10.1), gastric ADH activities in PTU-treated rats increased by 258.8% of control rat (6.3 ( 0.6 vs 2.2 ( 1.2, p〈0.001). In the activities of other tissues, PTU treatment decreased lung ADH activity by 59.7% of control, and increased kidney ADH activities by 247.1% of control rats. Conclusion: These data suggest that hypothyroidism causes an increase of gastric alcohol metabolism, and that the increase of gastric ADH activity can partly restore the first pass metabolism of ethanol in hypothyroid rats.
Lee, Sang Hun,Lee, Min Young,Lee, Jang Hern,Han, Ho Jae Wiley Subscription Services, Inc., A Wiley Company 2008 Journal of cellular biochemistry Vol.104 No.5
<P>Less information is available concerning the molecular mechanisms of cell survival after hypoxia in hepatocytes. Therefore, this study examined the effect of hypoxia on DNA synthesis and its related signal cascades in primary cultured chicken hepatocytes. Hypoxia increased [<SUP>3</SUP>H] thymidine incorporation, which was increased significantly after 0–24 h of hypoxic exposure. Indeed, the percentage of cell population in the S phase was increased in hypoxia condition. However, the release of LDH indicating cellular injury was not changed under hypoxic conditions. Hypoxia increased Ca<SUP>2+</SUP> uptake and PKC translocation from the cytosol to the membrane fraction. Among the PKC isoforms, hypoxia stimulated the translocation of PKC α and ϵ. Hypoxia also phosphorylated the p38 and p44/42 mitogen-activated protein kinases (MAPKs), which were blocked by the inhibition of PKC. On the other hand, hypoxia increased Akt and mTOR phosphorylation, which was blocked in the absence of intra/extracellular Ca<SUP>2+</SUP>. The inhibition of PKC/MAPKs or PI3K/Akt pathway blocked the hypoxia-induced [<SUP>3</SUP>H] thymidine incorporation. However, hypoxia-induced Ca<SUP>2+</SUP> uptake and PKC translocation was not influenced by LY 294002 or Akt inhibitor and hypoxia-induced MAPKs phosphorylation was not changed by rapamycin. In addition, LY 294002 or Akt inhibitor has no effect on the phosphorylation of MAPKs. It suggests that there is no direct interaction between the two pathways, which cooperatively mediated cell cycle progression to hypoxia in chicken hepatocytes. Hypoxia also increased the level of the cell cycle regulatory proteins [cyclin D<SUB>1</SUB>, cyclin E, cyclin-dependent kinase (CDK) 2, and CDK 4] and p-RB protein but decreased the p21 and p27 expression levels, which were blocked by inhibitors of upstream signal molecules. In conclusion, short time exposure to hypoxia increases DNA synthesis in primary cultured chicken hepatocytes through cooperation of Ca<SUP>2+</SUP>/PKC, p38 MAPK, p44/42 MAPKs, and PI3K/Akt pathways. J. Cell. Biochem. 104: 1598–1611, 2008. © 2008 Wiley-Liss, Inc.</P>
Characterization of Transparent Conducting Al-Doped ZnO Thin Films and Device Applications
Sang Hern Lee,Tae Hoon Kim,정세영,Young Moon Yu 한국물리학회 2007 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.51 No.II
In order to apply AZO thin film as transparent conducting electrode in the field of LEDs, AZO thin films were deposited by RF magnetron sputtering on various substrates, such as sapphire, p-GaN, n-GaN and TJ GaN-based LEDs, respectively. The AZO showed high transparency ($>$90 \% at 460 nm) and low resistivity (3.9 $\times$ 10$^{-4}$ $\Omega$$\cdot$cm). Especially, the AZO grown on n-GaN and TJ GaN-based LEDs exhibited good ohmic behavior with annealing at 500 $^{\circ}$C for 1$-$2 min under N${_2}$ ambient. The forward voltage of the TJ GaN-based LEDs with AZO contact was about 4.1 V and the light intensity was enhanced by more than 30 \% compared to that of conventional LEDs with Ni/Au contact. This result shows that AZO is a promising material for transparent conducting electrode in LED applications.
Ferroelectric Properties of PZT Thin Films Deposited on ZnO/Si Substrates
Sang Hern Lee,Jong Pil Kim,Joon Young Heo,Min Ki Ryu,Min Su Jang,Seong Ryul Kim 한국물리학회 2003 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.42 No.IV
Pb(Zr0:52Ti0:48)O3[PZT] thin lms have been prepared by the sol-gel technique on ZnO/Si substrates for nonvolatile memory operation of a metal-ferroelectric-semiconductor eld eect transistor. ZnO lms were deposited by rf-sputtering. Charge storage characteristics have been investigated in metal-ferroelectric-insulator-semiconductor (MFIS) memory structure with ZnO insulator buer layer. The PZT thin lms showed the ferroelectric hysteresis loop with remanent polarization of 20 C/cm2 and coercive eld of 140 kV/cm. The dielectric constants of PZT and ZnO were 200-650 and 16.5, respectively. The density of surface states of the ZnO/Si interface was estimated from the slope of the C-V characteristics to be about 1:421011 eV..1cm..2. The memory window of the MFIS structure was characterized with a capacitance-voltage (C-V ) method.l?