http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
Yan‑Li Li,Xi‑Qian Xing,Yi Xiao,Yan‑Hong Liu,Yu‑Shan Zhou,Min Zhuang,Chao‑Qian Li 한국유전학회 2020 Genes & Genomics Vol.42 No.12
Background: The overexpression of TSLP and DNA methylation in asthma were both risk factors the relationship was not clear. Objective: This study aimed to investigate the relationship between methylation status of TSLP promoter and mRNA/protein expression in asthmatic airway epithelial cells. Methods: Human bronchial epithelial cells were cultured in vitro and divided into: Control group, treated with PBS, model group, sensitized with LPS (10 μg/mL) for 12 h (37 °C, 5% CO2). Other groups were cultured with the pCMV3 plasmid (M + NC/pCMV), pGPH1 plasmid (M + NC/pGPH), DNMT1/pCMV3 plasmid (M + DNMT1/pCMV), and DNMT1/pGPH1 plasmid (M + DNMT1/pGPH) for 48 h. The expression of DNA methyltransferase 1 and TSLP were measured using real-time PCR and western blotting. Results: Compared with the control group, TSLP mRNA (1.00 ± 0.00 vs. 2.82 ± 0.81 vs. 1, P < 0.001) and protein (1.07 ± 0.04 vs. 1.46 ± 0.11, P < 0.01) were significantly greater, and the methylation of promoter was lower (92.75 ± 1.26 vs. 58.57 ± 3.34, P < 0.05) in the model group. Compared with the model group, TSLP mRNA (2.82 ± 0.81 vs. 1.17 ± 0.10, P < 0.001) decreased, but TSLP promoter methylation increased (58.57 ± 3.34 vs. 92.58 ± 7.30, P < 0.05) in M + DNMT1/pCMV. TSLP mRNA and protein were higher (2.82 ± 0.81 vs. 5.32 ± 0.21, P < 0.001; 1.46 ± 0.11 vs. 1.94 ± 0.11, respectively, P < 0.01), TSLP promoter methylation was lower (58.57 ± 3.34 vs. 33.57 ± 4.29, P < 0.05) in M + DNMT1/pGPH. Conclusions: Overexpression of TSLP in asthmatic airway epithelial cells may be regulated by DNA demethylation.
Hybrid Patterns Recognition of Control Chart Based on WA-PCA-PSO-SVM
Liu Yan-zhong,Zhang Hong-lie,Liu Yan-ju,Jiang Jin-gang 보안공학연구지원센터 2014 International Journal of Control and Automation Vol.7 No.10
Based on the analysis of the defect of traditional model, this paper proposes a new control chart pattern recognition model, which includes Wavelet Analysis (WA), Principal Component Analysis (PCA), Particle Swarm Optimization (PSO) and Support Vector Machine (SVM). WA is good to eliminate noise control chart anomaly pattern recognition of the adverse effect. PCA eliminates the redundant information of data between SVM and reduces the input dimension and computational complexity. PSO algorithm optimizes the parameters of SVM and the establishment of the optimal control chart anomaly pattern classifier can solve the problem optimal parameters of SVM. The simulation results show that the model is feasible, the results are reliable. This algorithm improves the control chart abnormal state average recognition accuracy and be used in the machining process real-time monitoring.
PL Property of Al-N Codoped p-type ZnO Thin Films Fabricated by DC Magnetron Sputtering
Yan-Yan Liu,박춘배,Hu-Jie Jin,Geun C. Hoang 한국전기전자재료학회 2009 Transactions on Electrical and Electronic Material Vol.10 No.3
High-quality Al-N doped p-type ZnO thin films were deposited on Si and buffer layer/Si by DC magnetron sputtering in a mixture of N2 and O2 gas. The target was ceramic ZnO mixed with Al2O3 (2 wt%). The p-type ZnO thin films showed a carrier concentration in the range of 1.5x1015~2.93x1017 cm-3, resistivity in the range of 131.2~2.864 Ωcm, mobility in the range of 3.99~31.6 cm2V-1s-1, respectively. It was easier to dope p-type ZnO films on Si substrates than on buffer layer/Si. The film grown on Si showed the highest quality of photoluminescence (PL) characteristics. The Al donor energy level depth (Ed) of Al-N codoped ZnO films was reduced to about 50 meV, and the N acceptor energy level depth (Ea) was reduced to 63 meV.
Yan-Yan Liu,박춘배,Hu-Jie Jin,Geun C. Hoang 한국전기전자재료학회 2009 Transactions on Electrical and Electronic Material Vol.10 No.1
N-doped ZnO thin films were deposited on n-type Si(100) and homo-buffer layer, and undoped ZnO thin film was also deposited on homo-buffer layer by RF magnetron sputtering method. After deposition, all films were in-situ annealed at 800 oC for 5 minutes in ambient of O2 with pressure of 10 Torr. X-ray diffraction shows that the homo-buffer layer is beneficial to the crystalline of N-doped ZnO thin films and all films have preferable c-axis orientation. Atomic force microscopy shows that undoped ZnO thin film grown on homo-buffer layer has an evident improvement of smoothness compared with N-dope ZnO thin films. Hall-effect measurements show that all ZnO films annealed at 800 oC possess p-type conductivities. The undoped ZnO film has the highest carrier concentration of 1.145x1017 cm-3. The photoluminescence spectra show the emissions related to FE, DAP and many defects such as VZn, ZnO, Oi and OZn. The p-type defects (Oi, VZn, and OZn) are dominant. The undoped ZnO thin film has a better p-type conductivity compared with N-doped ZnO thin film.
Yan Xing,Yuan Zhao,Ning Guo,Cun-Xue Pan,Gulina Azati,Yan-Wei Wang,Wen-Ya Liu 대한영상의학회 2017 Korean Journal of Radiology Vol.18 No.6
Objective: Using a pulsating coronary artery phantom at high heart rate settings, we investigated the efficacy of a motion correction algorithm (MCA) to improve the image quality in dual-energy spectral coronary CT angiography (CCTA). Materials and Methods: Coronary flow phantoms were scanned at heart rates of 60−100 beats/min at 10-beats/min increments, using dual-energy spectral CT mode. Virtual monochromatic images were reconstructed from 50 to 90 keV at 10-keV increments. Two blinded observers assessed image quality using a 4-point Likert Scale (1 = non-diagnostic, 4 = excellent) and the fraction of interpretable segments using MCA versus conventional algorithm (CA). Comparison of variables was performed with the Wilcoxon rank sum test and McNemar test. Results: At heart rates of 70, 80, 90, and 100 beats/min, images with MCA were rated as higher image scores compared to those with CA on monochromatic levels of 50, 60, and 70 keV (each p < 0.05). Meanwhile, at a heart rate of 90 beats/min, image interpretability was improved by MCA at a monochromatic level of 60 keV (p < 0.05) and 70 keV (p < 0.05). At a heart rate of 100 beats/min, image interpretability was improved by MCA at monochromatic levels of 50 keV (from 69.4% to 86.1%, p < 0.05), 60 keV (from 55.6% to 83.3%, p < 0.05) and 70 keV (from 33.3% to 69.3%, p < 0.05). Conclusion: Low-keV monochromatic images combined with MCA improves image quality and image interpretability in CCTAs at high heart rates.
Liu-Liu Long,Ke Xia,Wan-Zhong Lang,Li-Ling Shen,Qiang Yang,Xi Yan,Ya-Jun Guo 한국공업화학회 2017 Journal of Industrial and Engineering Chemistry Vol.51 No.-
The zirconia, alumina, and zirconia-alumina (xZr-Al) supported PtSnIn catalysts were prepared andcomparatively studied for propane dehydrogenation reaction. The structure–function relationships ofthe resultant catalysts are well elucidated upon several state-of-art physico-chemical characterizations. The results show that xZr-Al used as support for trimetallic PtSnIn catalysts exhibits the significantcatalytic performances. The PtSnIn/08Zr-Al catalyst has the highest Pt dispersion accompanied with thesmallest average Pt particles, and it presents the initial propane conversion and propylene selectivityabove 55.0% and 98.0% respectively. The initial propane conversions afterfive reaction–regenerationcycles are all above 55.0% and only decrease little ( 3%).
Yan Shang,Linshan Wang,Changsheng Liu,Carlos Fernandez,L.Rajendran,M. Kirthiga,Yuhong Wang,Dun Niu,Dongdong Liu 한국정밀공학회 2017 International Journal of Precision Engineering and Vol.18 No.1
We present for the first time the analysis and fabrication of a novel Tin-Nickel mixed salt electrolytic coloured processing and the performance of coloured films for Al-12.7Si-0.7Mg alloy. This alloy is a novel alloy containing high silicon aluminum alloy extrusion profile which presents excellent mechanical properties as well as broad market prospects. Nevertheless, this kind of material is urgent in need of surface treatment technology. The orthogonal design and single factor tests were applied to optimize for electrolytic coloured technological conditions. By controlling operation conditions, the uniform electrolytic coloured films with different color were obtained. Analysis of microstructure showed that tin particles had been deposited in the coloured film. The coloured films, about 10 μm thick, were uniform, dense and firmly attached to the substrate. After the coloured samples were maintained at 400ºC for 1 h, or quenched from 300ºC to room temperature, the coloured films did not change, demonstrating excellent thermostability and thermal shock resistance. Acid and alkali corrosion tests and potentiodynamic polarization showed that corrosion resistance of coloured sample was much better than those of untreated samples. After 240 h neutral salt spray test, protection ratings and appearance ratings of coloured films were Grade 9.
Yan Liu,Shawei Tang,Guangyi Liu,Yue Sun,Jin Hu 대한금속·재료학회 2017 METALS AND MATERIALS International Vol.23 No.3
In this study, a welded Ti-6Al-4V alloy was treated by means of local rapid induction heating in order torelax the residual stress existed in the weldment. The welded samples were heat treated at the differenttemperatures. The stress corrosion cracking behavior and electrochemical characterization of the as-weldedsamples before and after the post weld heat treatment as a function of residual stress were investigated. Electrochemical impedance spectroscopy measurements of the samples under slow strain rate test wereperformed in a LiCl-methanol solution. The results demonstrated that the residual stress in the as-weldedsample was dramatically reduced after the post weld heat treatment, and the residual stress decreased withthe increase in the heat treatment temperature. The stress corrosion cracking susceptibility and electrochemicalactivity of the as-welded sample were significantly reduced after the heat treatment due to therelaxation of the residual stress, which gradually decreased with the decreasing value of the residual stressdistributed in the heat treated samples.
Yan Liu,Zhaojun Lin,Jingtao Zhao,Ming Yang,Wenjing Shi,Yuanjie Lv,Zhihong Feng 한국물리학회 2016 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.68 No.7
The electron mobility for the prepared AlGaN/AlN/GaN heterostructure field-effect transistor (HFET) with the ratio of the gate length to the drain-to-source distance being less than 1/2 has been studied by comparing the measured electron mobility with the theoretical value. The measured electron mobility is derived from the measured capacitance-voltage (C-V) and current-voltage (I-V) characteristics, and the theoretical mobility is determined by using Matthiessen’s law, involving six kinds of important scattering mechanisms. For the prepared device at room temperature, longitudinal optical phonon scattering (LO scattering) was found to have a remarkable effect on the value of the electron mobility, and polarization Coulomb field scattering (PCF scattering ) was found to be important to the changing trend of the electron mobility versus the two-dimensional electron gas (2DEG) density.