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Yan Liu,Zhaojun Lin,Jingtao Zhao,Ming Yang,Wenjing Shi,Yuanjie Lv,Zhihong Feng 한국물리학회 2016 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.68 No.7
The electron mobility for the prepared AlGaN/AlN/GaN heterostructure field-effect transistor (HFET) with the ratio of the gate length to the drain-to-source distance being less than 1/2 has been studied by comparing the measured electron mobility with the theoretical value. The measured electron mobility is derived from the measured capacitance-voltage (C-V) and current-voltage (I-V) characteristics, and the theoretical mobility is determined by using Matthiessen’s law, involving six kinds of important scattering mechanisms. For the prepared device at room temperature, longitudinal optical phonon scattering (LO scattering) was found to have a remarkable effect on the value of the electron mobility, and polarization Coulomb field scattering (PCF scattering ) was found to be important to the changing trend of the electron mobility versus the two-dimensional electron gas (2DEG) density.
Jingtao Zhao,Zhenguo Zhao,Zidong Chen,Zhaojun Lin,Fukai Xu 한국물리학회 2017 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.71 No.12
In this study, we have investigated the electrical properties of the AlGaN/AlN/GaN heterostructure field-effect transistors (HFETs) with floating gate structures using the measured capacitancevoltage (C-V) and current-voltage (I-V) characteristics. It is found that the two-dimensional electron gas (2DEG) density under the central gate cannot be changed by the floating gate structures. However, the floating gate structures can cause the strain variation in the barrier layer, which lead to the non-uniform distribution of the polarization charges, then induce a polarization Coulomb field and scatter the 2DEG. More floating gate structures and closer distance between the floating gates and the central gate will result in stronger scattering effect of the 2DEG.
Min Wang,Xiaoming He,Biao Jiang,Wenrui Liu,Yu’e Lin,Dasen Xie,Zhaojun Liang,Lihui Chen,Qingwu Peng 한국식물생명공학회 2019 Plant biotechnology reports Vol.13 No.6
Drought, one of the crucial environmental constraints, seriously threats the quality and yield in chieh-qua. Therefore, cultivat-ing drought-tolerant variety is greatly necessary for its normal growth under water deficiency. However, at present, molecular knowledge on drought resistance is mostly unclear in chieh-qua. In the study, characteristics of two diverse genetic chieh-qua variety, A39 (drought-resistance) and H5 (drought-sensitivity), were analyzed. Under drought stress, H5 exerted high water loss rate, increased malonaldehyde (MDA) content, and decreased enzyme activity of glutathione peroxidase (GSH-PX) and superoxide dismutase (SOD) compared with A39. In addition, based on the transcriptome results, we obtained a total of 1821 (511 up-regulated and 1310 down-regulated) and 2114 (1282 up-regulated and 832 down- regulated) differentially expressed genes (DEGs) in the A39 versus H5 under normal and water-deficiency stress, respectively. Several DEGs involved in the cuticle synthesis (cytochrome P450 genes: CYP94A2, CYP86B1, CYP86A7), carbohydrate metabolism, and plant hormone signal transduction (small auxin-up RNA genes: SAUR32, SAUR72; JA-induced genes: TIFY 10A, TIFY 10C; ABA related genes: PYL2, PYL4) were explored and related to drought resistance. These expression patterns observed in the RNA-seq data were further confirmed with quantitative real-time PCR (qRT-PCR). In all, these results not only provided a new insight into analyzing genes of drought response, but also laid a foundation for isolating crucial genes involved in drought stress in chieh-qua.