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Cu 기판위에 성장한 MgO, MgAl₂O₄와 MgAl₂O₄/MgO 박막의 집속이온빔을 이용한 스퍼터링수율 측정과 이차전자방출계수 측정
정강원(K. W. Jung),이혜정(H. J. Lee),정원희(W. H. Jung),오현주(H. J. Oh),박철우(C. W. Park),최은하(E. H. Choi),서윤호(Y. H. Seo),강승언(S. O. Kang) 한국진공학회(ASCT) 2006 Applied Science and Convergence Technology Vol.15 No.4
MgAl₂O₄ 막은 MgO 보호막 보다 단단하며 수분 흡착 오염문제에 상당히 강한 특성을 가진다. 본 연구에서 AC-PDP의 유전체보호막으로 사용되는 MgO 보호막의 특성을 개선하기 위해 MgAl₂O₄/MgO 이중층 보호막을 제작하여 특성을 조사하였다. 전자빔 증착기를 사용하여 Cu 기판에 MgO와 MgAl₂O₄을 각각 1000 Å 두께로 증착, MgAl₂O₄/MgO을 200/800 Å 두께로 적층 증착 후, 이온빔에 의한 충전현상을 제거하기 위해 Al을 1000 Å 두께로 증착하였다. 집속 이온빔(focused ion beam ; FIB)장치를 이용하여 10 ㎸에서 14 ㎸까지 이온빔 에너지에 따라 MgO는 0.364 ~ 0.449 값의 스퍼터링 수율에서 MgAl₂O₄/MgO을 적층함으로 24 ~ 30 % 낮아진 0.244 ~ 0.357 값의 스퍼터링 수율이 측정되었으며, MgAl₂O₄는 가장 낮은 0.088 ~ 0.109 값의 스퍼터링 수율이 측정되었다. g-집속이온빔(g-FIB)장치를 이용하여 Ne? 이온 에너지를 50 V에서 200 V까지 변화 시켜 MgAl₂O₄/MgO와 MgO는 0.09 ~ 0.12의 비슷한 이차전자방출 계수를 측정 하였다. AC-PDP셀의 72시간 열화실험 후 SEM 및 AFM으로 열화된 보호막의 표면을 관찰하여 기존의 단일 MgO 보호막과 MgAl₂O₄/MgO의 적층보호막의 열화특성을 살펴보았다. It is known that MgAl₂O₄ has higher resistance to moisture than MgO, in humid ambient MgO is chemically unstable. It reacts very easily with moisture in the air. In this study, the characteristic of MgAl₂O₄ and MgAl₂O₄/MgO layers as dielectric protection layers for AC-PDP (Plasma Display Panel) have been investigated and analysed in comparison for conventional MgO layers. MgO and MgAl₂O₄ films both with a thickness of 1000 Å and MgAl₂O₄/MgO film with a thickness of 200/800 Å were grown on the Cu substrates using the electron beam evaporation. 1000 Å thick aluminium layers were deposited on the protective layes in order to avoid the charging effect of Ga? ion beam while the focused ion beam(FIB)is being used. We obtained sputtering yieds for the MgO, MgAl₂O₄ and MgAl₂O₄/MgO films using the FIB system. MgAl₂O₄/MgO protective layers have been found th show 24 ~ 30% lower sputtering yield values from 0.244 up to 0.357 than MgO layers with the values from 0.364 up to 0.449 for irradiated Ga? ion beam with energies ranged from 10 ㎸ to 14 ㎸. And MgAl₂O₄ layers have been found to show lowest sputtering yield values from 0.88 up to 0.109. Secondary electron emission coefficient(g) using the γ-FIB. MgAl₂O₄/MgO and MgO have been found to have similar g values from 0.09 up to 0.12 for indicated Ne+ ion with energies ranged from 50 V to 200 V. Observed images for the surfaces of MgO and MgAl₂O₄/MgO protective layers, after discharge degradation process for 72 hours by SEM and AFM. It is found that MgAl₂O₄/MgO protective layer has superior hardness and degradation resistance properties to MgO protective layer.
RF-O₂ Plasma 처리한 MgO 박막의 스퍼터링 수율 측정
정원희(W. H .Jeoung),정강원(K. W. Jeong),임연찬(Y. C. Lim),오현주(H. J. Oh),박철우(C. W. Park),최은하(E. H. Choi),서윤호(Y. H. Seo),김윤기(Y. K. Kim),강승언(S. O. Kang) 한국진공학회(ASCT) 2006 Applied Science and Convergence Technology Vol.15 No.3
RF-O₂ plasma 처리한 MgO 박막의 스퍼터링 수율을 집속이온빔 장치를 이용하여 측정하였다. 가속 전압 10 ㎸의 Ga 이온빔을 주사했을 때 plasma 처리하지 않은 MgO 박막의 스퍼터링 수율은 0.33 atoms/ion, RF-O₂ plasma 처리한 MgO 박막의 스퍼터링 수율은 0.20 atoms/ion 으로 RF-O₂ plasma 처리한 경우 스퍼터링 수율이 낮아졌다. 또한 XPS, AFM을 통해 plasma 처리로 인한 MgO 표면의 변화를 관찰하였다. MgO 박막에 RF-O₂ plasma 처리 한 후 XPS O 1s spectra의 binding energy와 FWHM 값이 각각 2.36 eV와 0.6167 eV 작아졌고 표면거칠기의 RMS 값 또한 0.32 ㎚ 작아졌다. We measured sputtering yield of RF O₂-plasma treated MgO protective layer for AC-PDP(plasma display panel) using a Focused Ion Beam System(FIB). A 10 ㎸ acceleration voltage was applied. The sputtering yield of the untreated sample and the treated sample were 0.33 atoms/ion and 0.20 atoms/ion, respectively. The influence of the plasma-treatment of MgO thin film was characterized by XPS and AFM analysis. We observed that the binding energy of the O 1s spectra, the FWHM of O 1s spectra and the RMS(root-mean-square) of surface roughness decreased to 2.36 eV, 0.6167 eV and 0.32 ㎚, respectively.
CHF₃ / C₂F6 플라즈마에 의한 실리콘 표면 잔류막의 특성
권광호(K.-H. Kwon),박형호(H.-H. Park),이수민(S. M. Lee),강성준(S. J. Kang),권오준(O.-J. Kwon),김보우(B.W. Kim),성영권(Y.-K. Sung) 한국진공학회(ASCT) 1992 Applied Science and Convergence Technology Vol.1 No.1
실리콘을 CHF₃/C₂F_6 가스 플라즈마를 이용하여 식각하면 실리콘위에 탄소, 불소 및 산소로 이루어진 잔류막이 형성된다. 이 잔류막을 XPS로 분석한 결과 탄소는 C-Si, C-Si, C-C/H, C-CF_x(x≤3), C-F, C-F₂, C-F₃ 결합을 하고 있으며, 불소는 F-Si, F-C 및 F-O 결합으로 이루어져 있음을 알았다. 한편 산소는 O-Si 및 O-F 결합으로, 실리콘은 Si-Si, Si-C 및 Si-O 결합상태를 나타낸다. 잔류막의 수직분포 연구를 통하여 Si-O 및 Si-C 결합이 탄소와 불소의 결합층 아래에 존재하고, 잔류막의 표면부에 F-O 결합이 분포함을 알았다. 또한 건식식각 변수가 잔류막 형성에 미치는 영향이 조사되었으며 CHF₃/C₂F_6 가스 유량비, RF power 벚 압력 등이 잔류막의 두께, 조성비 및 잔류막의 결합상태에 영향을 미침을 알 수 있었다. Si surfaces exposed to CHF₃/C₂F_6 gas plasmas in reactive ion etching (RIE) have been characterized by X-ray photoelectron spectroscopy (XPS). CHF₃/C₂F_6 gas plasma exposure of Si surface leads to the deposition of residual film containing carbon and fluorine. The narrow scan spectra of C 1s show various bonding states of carbon as C-Si, C-Si, C-C/H, C-CF_x(x≤3), C-F, C-F₂, and C-F₃. The chemical bonding states of fluorine are described with F-Si, F-C, and F-O. And the oxygen and silicon are also detected. The effects of parameters for reactive ion etching as CHF₃/C₂F_6 gas ratio, RF power, and pressure are investigated.
Baatartsogt. O,H. K. Lim,Urantulkhuur. B,S. W. Suh,J. D. Kang,B. G. Jang,J. H. Kim,S. H. Kim,J. H. Lee,K. D. Choi 한국가금학회 2007 한국가금학회 정기총회 및 학술발표회 Vol.24 No.-
Fowl typhoi d (FT) i s a severe systemic disease of chickens causing heavy economic losses to the poultry industry through mortality, reduced egg production and culling of precious breeding stocks. It is hard to be discovered by clinical sign, pathology and immunology. The immune response to S. gallinarum is poorly characterized because of its virulence. In this study, the total RNA isolated by spleen lymphocytes for Affymetrix GeneChip and RT-PCR analysis. Total RNA was extracted using TRIzol (Invitrogen, Carlsbad, CA). These results indicate that expression of LY86, FN1, K60, CCL19, ah22 increased and during immune response at chickens B-FVI was decreased in fowl typhoid. In conclusion, the differential expressed genes in spleen lymphocytes from S. gallinarum infected and uninfected control groups were related with immunological defense system of chickens. The several identified gene may be used as valuable in formation for immune response mechanims of FT biology.
Putri, W. B. K.,Tran, D. H.,Lee, O. Y.,Kang, W. N.,Miyanaga, T.,Yang, D. S.,Kang, B. American Institute of Physics 2014 Journal of Applied Physics Vol.115 No.9
<P>Extended X-ray absorption fine structure (EXAFS) spectroscopy is a powerful method to investigate the local structure of thin films. Here, we have studied EXAFS of MgB2 films grown on SiC buffer layers. Crystalline SiC buffer layers with different thickness of 70, 100, and 130 nm were deposited on the Al2O3 (0001) substrates by using a pulsed laser deposition method, and then MgB2 films were grown on the SiC buffer layer by using a hybrid physical-chemical vapor deposition technique. Transition temperature of MgB2 film decreased with increasing thickness of SiC buffer layer. However, the T-c dropping went no farther than 100 nm-thick-SiC. This uncommon behavior of transition temperature is likely to be created from electron-phonon interaction in MgB2 films, which is believed to be related to the ordering of MgB2 atomic bonds, especially in the ordering of Mg-Mg bonds. Analysis from Mg K-edge EXAFS measurements showed interesting ordering behavior of MgB2 films. It is noticeable that the ordering of Mg-B bonds is found to decrease monotonically with the increase in SiC thickness of the MgB2 films, while the opposite happens with the ordering in Mg-Mg bonds. Based on these results, crystalline SiC buffer layers in MgB2 films seemingly have evident effects on the alteration of the local structure of the MgB2 film. (C) 2014 AIP Publishing LLC.</P>
0.75Δ% 굴절율차를 가진 40채널 광파장 다중화 및 역다중화 소자 제작 및 특성
문형명,최기선,이길현,김동훈,이지훈,이동환,오진경,곽승찬,권오관,강동수,최준석,정건,이현용,Moon, H.M.,Choi, G.S.,Lee, K.H.,Kim, D.H.,Lee, J.H.,Lee, D.H.,Oh, J.K,Kwak, S.C.,Kwon, O.K.,Kang, D.S.,Choi, J.S.,Jong, G,Lee, H.Y. 한국광학회 2005 한국광학회지 Vol.16 No.3
[ $0.75delta\%$ ]의 평판광회로(PLC;Planar Lightwave Circuit)소자의 설계 및 제작기술을 가지고 저손실과 높은 누화율을 가진 파장 다중화 및 역다중화 소자를 개발하였다. C-band AWG(Arrayed Waveguide Grating)에서의 삽입손실은 2.503이하, 누화율은 35dB이상, 균일도는 1dB이하이며 L-band에서는 Vernier 디자인을 적용하여 ITU-T의 파장 정확도가 0.04nm이하가 되도록 제작하였다. A 40 channel arrayed-waveguide grating (AWG) filter operating in C-band and L-band wavelength regions has been fabricated using PLC (Planar Lightwave Circuit) processes with 0.75 refractive index difference. Its design was optimized for matching the center wavelength with the ITU-recommended wavelength. The characteristics of the fabricated C-band AWG are as follows; average insertion loss < 2.5 dB, polarization-dependent loss < 0.3 dB, non-adjacent crosstalk >35dB, and the loss uniformity of 0.8 dB. In the L-band AWG, wavelength accuracy is below 0.02nm.
Emodin accentuates atrial natriuretic peptide secretion in cardiac atria
Zhou, G.H.,Zhang, F.,Wang, X.N.,Kwon, O.J.,Kang, D.G.,Lee, H.S.,Jin, S.N.,Cho, K.W.,Wen, J.F. North-Holland ; Elsevier Science Ltd 2014 european journal of pharmacology Vol.735 No.-
Emodin, an active anthraquinone constituent isolated from the rhubarb, a traditional Chinese herbal medicine which is widely used in clinical treatment, has cardiovascular protective properties. However, it remains unclear whether the cardiovascular protective actions of emodin are related to an activation of cardiac natriuretic hormone secretion. The purpose of the present study was to explore the effect of emodin on the secretion of ANP, a member of the family of cardiac natriuretic hormones, and its mechanisms involved. Experiments were performed in isolated perfused beating rabbit atria allowing measurement of ANP secretion, atrial pulse pressure, and stroke volume. Emodin increased ANP secretion concomitantly with a decrease in atrial pulse pressure and stroke volume in a concentration-dependent manner. These effects were reversible. Inhibition of K<SUP>+</SUP> channels with tetraethylammonium and glibenclamide attenuated the emodin-induced changes in ANP secretion and atrial dynamics. Furthermore, the emodin-induced changes in ANP secretion and atrial dynamics were attenuated by inhibition of L-type Ca<SUP>2+</SUP> channels with nifedipine. Atropine, methoctramine, tertiapin-Q, and pertussis toxin had no significant effect on the emodin-induced changes in ANP secretion and mechanical dynamics. The present study demonstrates that emodin increases ANP secretion via inhibition of L-type Ca<SUP>2+</SUP> channels through an activation of K<SUP>+</SUP><SUB>ATP</SUB> channel in isolated beating rabbit atria. The results also provide a rationale for the use of emodin in the treatment of impairment of the regulation of the cardiovascular homeostasis.