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유중 용존수소 감지를 위한 Pd/NiCr 게이트 MISFET 센서의 제작
김갑식,이재곤,함성호,최시영 ( Gop Sick Kim,jae Gon Lee,Sung Ho Hahm,Sie Young Choi ) 한국센서학회 1997 센서학회지 Vol.6 No.3
The Pd/NiCr gate MISFET-type sensors were fabricated for detecting hydrogen dissolved in high-capacivity transformer oil. To improve stability and high concentration sensitivity of seztsvr, Pd/NiCr double catalysis metal gate was used. To reduce the serious gate voltage drift of the sensor induced by hydrogen, the gate insulators of 2 FETs were constructed with double layer of silicon dioxide and silicon nitride. The hydrogen sensitivity of the Pd/NiCr gate MISFET is about a half of Pd/Pt gate MISFET`s sensitivity but the Pd/NiCr gate MISFET has good stability and high concentration detectivity up to 1000 ppm.
MgO 기판 위에 올린 PLT 박막의 특성과 적외선 센서의 제작
조성현,정재문,이재곤,함성호,김기완,최시영 ( Sung Hyun Cho,Jae Mun Jung,Jae Gon Lee,Ki Wan Kim,Sung Ho Hahm,Sie Young Choi ) 한국센서학회 1997 센서학회지 Vol.6 No.3
The lanthanum-modified lead titanate (PLT) thin films on (100) cleaved MgO single crystal substrate have been prepared by RF magnetron sputtering method using Pb0-rich target with oaring La contents. The substrate temperature, working pressure, Ar/O₂, and RF power dznsity of PLT thin films were 561℃, 10mTorr, 10/1, and 1.7W/㎠, respectively. In these conditions, the c-axis growth and tetragonality of the PLT thin films decreased for addition of La content and the PLT thin films showed diffuse phase transition from high temperature XRD patterns. The infrared sensor was fabricated. The remanent polarization was above 1.71 μC/㎠ and the pyroelectric voltage was above 500mV with 10:1 signal to noise ratio.
선택적인 다공질 실리콘 에칭법을 이용한 압저항형 실리콘가속도 센서의 제조
심준환,김동기,조찬섭,태흥식,함성호,이종현 ( Jun Hwan Sim,Dong Ki Kim,Chan Seob Cho,Heung Sik Tae,Sung Ho Hahm,Jong Hyun Lee ) 한국센서학회 1996 센서학회지 Vol.5 No.5
A piezoresistive silicon acceleration sensor with 8 beams, utilized by an unique silicon micromachining technique using porous silicon etching method which was fabricated on the selectively diffused (111)-oriented n/n/n silicon subtrates. The width, length, and thickness of the beam was 100 ㎛, 500 ㎛, and 7 ㎛, respectively, and the diameter of the mass paddle (the region suspended by the eight beams) was 1.4 mm. The seismic mass on the mass paddle was formed about 2 mg so as to measure accelerations of the range of 50g for automotive applications. For the formation of the mass, the solder mass was loaded on the mass paddle by dispensing Pb/Sn/Ag solder paste. After the solder paste is deposited, Heat treatment was carried out on the 3-zone reflow equipment. The decay time of the output signal to impulse excitation of the fabricated sensor was observed for approximately 30 ms. The sensitivity measured through summing circuit was 2.9 mV/g and the nonlinearity of the sensor was less than 2% of the full scale output. The output deviation of each bridge was ±4%. The cross-axis sensitivity was within 4% and the resonant frequency was found to be 2.15 kHz from the FEM simulation results.
GaN를 이용한 Schottky diode형 자외선 수광소자의 제작
성익중,이석헌,이채향,이용현,이정희,함성호,Seong, Ik-Joong,Lee, Suk-Hun,Lee, Chae-Hyang,Lee, Yong-Hyun,Lee, Jung-Hee,Hahm, Sung-Ho 대한전자공학회 1999 電子工學會論文誌, D Vol.d36 No.6
본 논문에서는 GaN 박막 위에 각각 알루미늄(Al)과 백금(Pt)을 증착하여 저항성 전극 및 투명한 schottky 전극을 형성한 평면형 자외선 수광소자를 제작하였다. 제작된 소자에 대해 전기적 특성과 광학적 특성을 조사하여 자외선 센서로서의 적합성을 검토하였다. 사파이어 기판위에 성장된 GaN 박막은 $7.8{\times}10^{16}cm^{-3}$의 도핑(doping)농도와 $138 cm^2/V{\cdot}s$의 이동도(mobility)를 가졌으며, 파장이 365 nm 이하인 빛만을 흡수하는 자외선 감지막 특성을 나타내었다. 5 V의 역방향 전압을 인가하였을 때 제조된 schottky형 자외선 센서는 325 nm의 자외선 파장에서 응답도가 2.84 A/W였고, $4{\times}10^4$의 큰 신호대 잡음비(SNR)의 $3.5{\times}10^9$W의 잡음등가전력(NEP)을 나타내었다. 따라서 이들 결과로부터 GuN를 이용한 schottky 다이오드가 가시광 차단 UV photodetector를 제조할 수 있음을 확인하였다. We fabricated a planar ultra-violet photodetector whose ohmic and schottky contacts were respectively formed with evaporated Al and Pt on the GaN layer. To examine the applicability of the device to the UV sensor, we investigated its electrical and optical characteristics. The GaN layer on the sapphire waver had $7.8{\times}10^{16}cm^{-3}$ of doping concentnation and the $138 cm^2/V{\cdot}s$ of electron mobility and it absorbed the spectrum of the light below 325 nm wavelength. It had the responsivity of 2.8 A/W of at 325 nm, and the signal to noise ratio(SNR) of $4{\times}10^4$, and the noise equivalent power(NEP) of $3.5{\times}10^9$W under 5 V reverse bias. These results confirmed that the GaN schottky diode had a solar blind properly when it was applied to the UV photodetector.
김동진,정영배,이명복,이정희,이용현,함성호,이종화,Kim, Dong-Jin,Jung, Young-Bae,Lee, Myung-Bok,Lee, Jung-Hee,Lee, Yong-Hyun,Hahm, Sung-Ho,Lee, Jong-Hwa 대한전자공학회 2000 電子工學會論文誌-SD (Semiconductor and devices) Vol.37 No.6
ALE(atomic layer epitaxy)법을 이용하여 (100)면의 Si 기판위에 TiN 박막을 증착하였다. 증착된 TiN 박막을 XRD, 4-point probe, AFM, AES, SEM등의 장비를 사용하여 분석하였다. ALE법에 의한 TiN의 증착을 위한 반응 전구체(precusor)로는 TEMAT(tetrakis (ethylmethylamino)titanium)와 반응 가스로는 $NH_3$를 사용하였다. 표면 포화반응을 형성하기 위해 각 반응 기체는 TEMAT-$N_2-NH_3-N_2$의 순서로 교대로 반응로에 주입하였다. 그 결과 TiN 박막은 150 ~ 220 $^{\circ)C$에서 자기 제어 성장(self-limiting growth) 기구에 의한 박막 증착 특성을 보였다. 증착된 TiN 박막은 증착율이 4.5 ${\AA}$/ cycle로 일정하였고, 비정질 (amorphous)의 구조를 보였다. 박막의 저항율과 표면 평균 거칠기는 210~230${\mu}{\Omega}{\cdot}$cm와 7.9~9.3${\AA}$로 측정되었다. TiN 박막을 2000 ${\AA}$의 두께로 증착하였을 때, 폭이 0.43${\mu}$m이고 단차비 (aspect ratio)가 6인 트렌치 구조에서 매우 우수한 단차피복성을 보였다. The TiN thin films were deposited by ALE(atomic layer epitaxy) on (100) silicon substrate. The TiN thin films were characterized by means of XRD, 4-point probe, AFM, AES and SEM. TEMAT(terakis(ethyl methy lamino)titanium) and $NH_3$ were injected into the reactor in sequence of TEMAT-$N_2-NH_3-N_2$ to ensure a saturated surface reaction. As a result, the depostion rate of the TiN film was controlled by self-limiting growth mechanism at temperature range form 150 to 220 $^{\circ}C$. Deposited TiN films, all of which show amorphous structure, had a fixed deposition rate of 4.5 ${\AA}$/cycle. The resistivity of 210 ~ 230 ${\mu}{\Omega}{\cdot}$cm and the surface r.m.s. roughness of 7.9 ~ 9.3 ${\AA}$ were measured. When TiN film of 2000 ${\AA}$ were deposited, a excellent step coverage were observed in a trench structure of 0.43${\mu}m$ contacts with 6:1 aspect ratio.
Scaling MOSFETs을 위한 플라즈마 도핑 시스템을 이용한 fully 니켈 실리사이드의 일함수 조절
서보균(Bo-Kyun Seo),김병기(Byoung-Gi Kim),이헌복(Heon-Bok Lee),함성호(Sung-Ho Hahm) 대한전자공학회 2007 대한전자공학회 학술대회 Vol.2007 No.11
There are divided two kinds of potential solutions for limit of planar bulk MOSFET on the rise. First is a structural improvement of 3-Dimensional structure using double or triple gate, the other is a material improvement of physical phenomenons of earners using sal or SiGe substrate, novel gate material or dielectric material. In this paper, we focus on metal gate characteristics and fabricated MOS capacitor utilizing work function tuning of metal gate for pertinently controllable threshold voltage avoiding substrate doping, which was used NiSi.
뉴로모픽 시스템을 위한 간단한 SPICE 멤리스터 모델
최규민 ( Gyumin Choi ),박병준 ( Byeong-Jun Park ),류기홍 ( Gi-Hong Rue ),함성호 ( Sung-Ho Hahm ) 한국센서학회 2021 센서학회지 Vol.30 No.4
A simple memristor model is proposed for the neuromorphic system in the Simulation Program for Integrated Circuits Emphasis (SPICE). The memristive I-V characteristics with different voltage and frequencies were analyzed. And with the model, we configured a learning and inference system with 4 by 4 memristor array to show the practical use of the model. We examined the applicability by configuring the simplest neuromorphic circuit. The total simulation time for the proposed model was 18% lesser than that for the onememristor model. When compared with more memristor models in a circuit, the time became even shorter.
좁은 트렌치를 이용한 Source/Drain 금속 접촉기술
장재형(Jae-Hyoung Jang),서보균,안시현(Shi-Hyun An),이헌복(Heon-Bok Lee),함성호(Sung-Ho Hahm) 대한전자공학회 2007 대한전자공학회 학술대회 Vol.2007 No.11
In this paper, a 3-dimensional MOSFET was fabricated was self-aligned contacts. we formed oxide spacer and nitride spacer. After etching out the sacrificial oxide spacer completely between fin side and nitride spacer, the ultra narrow trench was formed and filled up to form the contact by ALD Ni. This structure has the maximum contact area and show an alternative process techinique to overcome the lithography limit and to reduce contact area as the device scale down.
이헌복 ( Heon Bok Lee ),백경흠 ( Kyong Hum Baek ),이명복 ( Myung Bok Lee ),이정희 ( Jung Hee Lee ),함성호 ( Sung Ho Hahm ) 한국센서학회 2005 센서학회지 Vol.14 No.2
The planar Schottky diodes were fabricated and modeled to probe the device applicability of the cracked GaN epitaxial layer on a (111) silicon substrate. On the unintentionally n-doped GaN grown on silicon, we deposited Ti/AUNi/Au as the ohmic metal and Pt as the Schottky metal. The ohmic contact achieved a minimum contact resistivity of 5.51 x 10^(-5) Ω·cm² after annealing in an N2 ambient at 700 ℃ for 30 sec. The fabricated Schottky diode exhibited the barrier height of 0.7 eV and the ideality factor was 2.4, which are significantly lower than those parameters of crack free one. But in photoresponse measurement, the diode showed the peak responsivity of 0.097 A/W at 300 nm, the cutoff at 360 nm, and UV/visible rejection ratio of about W. The SPICE(Simulation Program with Integrated Circuit Emphasis) simulation with a proposed model, which was composed with one Pt/GaN diode and three parasitic diodes, showed good agreement with the experiment.