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MgO 기판 위에 올린 PLT 박막의 특성과 적외선 센서의 제작
조성현,정재문,이재곤,함성호,김기완,최시영 ( Sung Hyun Cho,Jae Mun Jung,Jae Gon Lee,Ki Wan Kim,Sung Ho Hahm,Sie Young Choi ) 한국센서학회 1997 센서학회지 Vol.6 No.3
The lanthanum-modified lead titanate (PLT) thin films on (100) cleaved MgO single crystal substrate have been prepared by RF magnetron sputtering method using Pb0-rich target with oaring La contents. The substrate temperature, working pressure, Ar/O₂, and RF power dznsity of PLT thin films were 561℃, 10mTorr, 10/1, and 1.7W/㎠, respectively. In these conditions, the c-axis growth and tetragonality of the PLT thin films decreased for addition of La content and the PLT thin films showed diffuse phase transition from high temperature XRD patterns. The infrared sensor was fabricated. The remanent polarization was above 1.71 μC/㎠ and the pyroelectric voltage was above 500mV with 10:1 signal to noise ratio.
수중 수소 감지를 위한 MISFET 형 센서제작과 그 특성
손승현,조용수,최시영 한국센서학회 2000 센서학회지 Vol.9 No.2
In this work, Pd/Pt gate MISFET sensor using Pd membrane was fabricated to detect the hydrogen in DI water. A differential pair-type was used to minimize the intrinsic voltage drift of the MISFET. To avoid hydrogen induced drift of the sensor, the silicon dioxide/silicon nitride double layer was used as the gate insulator of the FET's. In order to eliminate the blister formation on the surface of the hydrogen sensing gate metal, Pd/Pt double metal layer was deposited on the gate insulator. For this type of application sensors need to be isolated from the DI water, and a Pd membrane was used to separate the sensor from the DI water. The output voltage change due to the variation of hydrogen concentration is linear from 100ppm to 500 ppm.