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높은 항복전압(>1,000 V)을 가지는 Circular β-Ga<sub>2</sub>O<sub>3</sub> MOSFETs의 특성
조규준,문재경,장우진,정현욱,Cho, Kyu Jun,Mun, Jae-Kyong,Chang, Woojin,Jung, Hyun-Wook 한국전기전자재료학회 2020 전기전자재료학회논문지 Vol.33 No.1
In this study, MOSFETs fabricated on Si-doped, MBE-grown β-Ga<sub>2</sub>O<sub>3</sub> are demonstrated. A Si-doped Ga<sub>2</sub>O<sub>3</sub> epitaxial layer was grown on a Fe-doped, semi-insulating 1.5 cm × 1 cm Ga<sub>2</sub>O<sub>3</sub> substrate using molecular beam epitaxy (MBE). The fabricated devices are circular type MOSFETs with a gate length of 3 ㎛, a source-drain spacing of 20 ㎛, and a gate width of 523 ㎛. The device exhibited a good pinch-off characteristic, a high on-off drain current ratio of approximately 2.7×10<sup>9</sup>, and a high breakdown voltage of 1,080 V, which demonstrates the potential of Ga<sub>2</sub>O<sub>3</sub> for power device applications including electric vehicles, railways, and renewable energy.
ETRI 0.25μm GaN MMIC 공정 및 X-대역 전력증폭기 MMIC
이상흥,김성일,안호균,이종민,강동민,김동영,김해천,민병규,윤형섭,조규준,장유진,이기준,임종원,Lee, Sang-Heung,Kim, Seong-Il,Ahn, Ho-Kyun,Lee, Jong-Min,Kang, Dong-Min,Kim, Dong Yung,Kim, Haecheon,Min, Byoung-Gue,Yoon, Hyung Sup,Cho, Kyu Jun,Ja 한국전자파학회 2017 한국전자파학회논문지 Vol.28 No.1
본 논문에서는 한국전자통신연구원(ETRI)에서 구축한 $0.25{\mu}m$ GaN MMIC 공정 및 소자특성을 소개하고, 이를 이용한 X-대역 3 W GaN 전력증폭기 MMIC 설계 제작 결과를 논의한다. X-대역 동작에 적합한 GaN HEMT 소자를 선정하여 GaN 전력증폭기 MMIC를 1단으로 설계하고 제작하였으며, 이를 통하여 ETRI $0.25{\mu}m$ GaN MMIC 공정 및 특성을 평가하고 분석하였다. X-대역 GaN 전력증폭기 MMIC 제작 결과, 출력전력 3.5 W, 이득 10 dB 및 전력부가효율 35 % 특성을 얻었다. In this paper, ETRI's $0.25{\mu}m$ GaN MMIC process is introduced and the fabricated results of X-Band 3 W power amplifier MMIC are discussed. The one-stage X-Band 3 W power amplifier MMIC using the $0.25{\mu}m$ GaN MMIC devices has been designed and fabricated. From the fabricated GaN MMIC, the characteristics of the $0.25{\mu}m$ GaN MMIC process and devices are evaluated and analyzed. The X-band power amplifier MMIC shows output power of 3.5 W, gain of 10 dB, and power-added efficiency of 35 %.
AlGaN/GaN HEMT 소자 제작에서 게이트 리세스 공정 개선에 의한 소자 DC 특성의 변화
민병규(Byoung-Gue Min),윤형섭(Hyung Sup Yoon),안호균(Ho-Kyun Ahn),김해천(Haecheon Kim),조규준(Kyu-Jun Cho),이종민(Jong-Min Lee),김성일(Seong-Il Kim),강동민(Dong-Min Kang),이상흥(Sang-Heung Lee),주철원(Chul-Won Ju),김동영(Dong-Young K 대한전자공학회 2015 대한전자공학회 학술대회 Vol.2015 No.6
In the fabrication of AlGaN/GaN HEMT on SiC, it is critical to establish a stable process condition of a gate recess. In this study, we etched the AlGaN layer by a low-energy ICP with variations of etch times. In addition, HC1 treatment followed the etch step. The 2-times process of SiN deposition and etch was tried to reduce the gate length by mis-aligned lithography. A proportional relationship between Vth(or Gm) and recess etch depth was identified. There also was a surface-improving effect to reduce the leakage current by HC1 treatment.
50W 출력전력 특성을 갖는 0.25μm GaN-on-SiC HEMT
강동민(Dong-Min Kang),민병규(Byung-Gyu Min),이종민(Jong-Min Lee),윤형섭(Hyung-Sup Yoon),김성일(Sung-Il Kim),안호균(Ho-Kyun Ahn),조규준(Kyu-Jun Cho),김동영(Dong-Young Kim),이상흥(Sang-Heung Lee),김해천(Hae-Cheon Kim),임종원(Jong-Won L 대한전자공학회 2016 대한전자공학회 학술대회 Vol.2016 No.6
This paper describes the successful development and the performance of a 50 W GaN-on-SiC High Electron Mobility Transistor(HEMT) The GaN HEMT with a gate length of 0.25μm and a total gate width of 12 mm were fabricated. The GaN HEMT provide a linear gain of 8 dB with 52 W output power operated at 30 V drain voltage in pulse operation with a pulse width 100 us and 10 % duty cycle at X-band. It also shows a maximum output power density of 4.16 W/mm. The X-band pulsed power amplifier exhibited an output power of 52 W(47.2 dBm) with a power gain of 11.5 dB in a frequency range of 9.2 – 9.5 GHz. This 50 W GaN HEMT and X-band 50 W pulsed power amplifier are suitable for the radar systems and related applications in X-band.
ETRI 0.25 ㎛ GaN MMIC 공정 및 X-대역 전력증폭기 MMIC
이상흥(Sang-Heung Lee),김성일(Seong-Il Kim),안호균(Ho-Kyun Ahn),이종민(Jong-Min Lee),강동민(Dong-Min Kang),김동영(Dong Yung Kim),김해천(Haecheon Kim),민병규(Byoung-Gue Min),윤형섭(Hyung Sup Yoon),조규준(Kyu Jun Cho),장유진(Yoo Jin Ja 한국전자파학회 2017 한국전자파학회논문지 Vol.28 No.1
본 논문에서는 한국전자통신연구원(ETRI)에서 구축한 0.25 ㎛ GaN MMIC 공정 및 소자특성을 소개하고, 이를 이용한 X-대역 3 W GaN 전력증폭기 MMIC 설계 · 제작 결과를 논의한다. X-대역 동작에 적합한 GaN HEMT 소자를 선정하여 GaN 전력증폭기 MMIC를 1단으로 설계하고 제작하였으며, 이를 통하여 ETRI 0.25 ㎛ GaN MMIC 공정 및 특성을 평가하고 분석하였다. X-대역 GaN 전력증폭기 MMIC 제작 결과, 출력전력 3.5 W, 이득 10 ㏈ 및 전력부가효율 35 % 특성을 얻었다. In this paper, ETRI"s 0.25 ㎛ GaN MMIC process is introduced and the fabricated results of X-Band 3 W power amplifier MMIC are discussed. The one-stage X-Band 3 W power amplifier MMIC using the 0.25 ㎛ GaN MMIC devices has been designed and fabricated. From the fabricated GaN MMIC, the characteristics of the 0.25 ㎛ GaN MMIC process and devices are evaluated and analyzed. The X-band power amplifier MMIC shows output power of 3.5 W, gain of 10 ㏈, and power-added efficiency of 35 %.