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1.48 ㎛ 레이저 다이오드로 여기된 Er³+ 첨가 광섬유 광증폭기에 대한 이론적 분석
김회종(Hwe Jong Kim),이상배(Sang Bae Lee),조재철(Jae Cheol Jo),최상삼(Sang Sam Choi),김영덕(Yong Duk Kim) 한국광학회 1993 한국광학회지 Vol.4 No.1
3준위 레이저 rate equation 및 overlap integral로부터 파장 1.48 ㎛에서 여기된 Er³+ 첨가 광섬유 광증폭기를 위한 광섬유 매개 변수의 최적 조건을 계산하였다. 이 계산으로부터 Er³+ 첨가 광섬유 광증폭기의 소신호 이득(small signal gain) 특성을 개구수 (N.A.), V값, 광섬유 길이, 차단 파장(cutoff wavelength) 등의 함수로 알아 보았으며 또한, 최대 소신호 이득을 갖기 위한 광섬유 매개 변수를 결정하였다. We carried out the useful theoretical calculation for the optimum design of a 1.48 ㎛ diode laser pumped Er³+ doped fiber amplifier. The model we established is based on the rate equations of three level laser system and the overlap integral between fundamental mode LP_(01) and Er³+ doped area.<br/> We determined several fiber parameters (N.A., V value, fiber length, Er³+ concentration, cutoff wavelength etc.) for the optimum design of a high optical gain. We found that our theoretical results are very useful to the design of Er³+ doped fiber used in EDFA.
이불화제논 기상 식각에 의한 실리콘 기판의 표면 텍스쳐링 특성
김선훈(Seon Hoon Kim),기현철(Hyun Chul Ki),김두근(Doo Gun Kim),나용범(Yong Beom Na),김남호(Nam Ho Kim),김회종(Hwe Jong Kim) 대한전기학회 2010 전기학회논문지 Vol.59 No.4
We investigated the haze and the surface roughness of textured Si substrates etched by XeF₂ etching system with the etching parameters of XeF₂ pressure, etching time, and etching cycle, Here, the haze was obtained as a function of wavelength from the measured reflectance, The haze of textured Si substrates was strongly affected by the etching parameter of etching cycle. The surface coughness of textured Si substrates was calculated with the haze and the scalar scattering theory at the wavel ngth of BDD ㎚. Then, the surface coughness was compared with that measured by atomic force microscope, The surface coughness5 obtained by two methods was changed with the similar tendency in terms of XeF₂ etching conditions.
다중모드 결합기의 입출력 광도파로 사이에 광결합이 없는 삼각형 링 공진기
김두근(Doo-Gun Kim),김효진(Hyo-Jin Kim),김선훈(Seon-Hoon Kim),기현철(Hyun-Chul Ki),김회종(Hwe-Jong Kim),오금윤(Geum-Yoon Oh),최영완(Young-Wan Choi) 대한전기학회 2010 전기학회논문지 P Vol.59 No.1
We have investigated the properties of the novel triangular ring resonator with the total internal reflection mirrors and the semiconductor optical amplifier for photonic integrated circuits (PIC). A novel triangular resonators containing active and passive sections are fabricated and characterized with various multimode interference (MMI) lengths. The optimum MMI length and width turn out to be 108 and 9 μm, respectively. A free spectral range of approximately 228 GHz is observed near 1558 nm along with an on-off ratio of 9 dB. The proposed triangular resonator has a good advantage to remove the direct coupling between the two access waveguides of the MMI coupler. Hence, such resonators can be directly integrated with other devices making compact and highly functional PIC possible.
김두근,김홍승,오금윤,김선훈,기현철,김태언,김회종,최영완,Kim, Doo Gun,Kim, Hong-Seung,Oh, Geum-Yoon,Kim, Seon-Hoon,Ki, Hyun-Chul,Kim, Tae-Un,Kim, Hwe Jong,Ma, Ping,Hafner, Christian,Choi, Young-Wan 한국전기전자재료학회 2014 전기전자재료학회논문지 Vol.27 No.3
We have investigated the optical properties of plamonic waveguide with tapered structure based on InP material for photonic integrated circuit(PIC). The proposed plasmonic waveguide is covered with the Ag thin film to generate the plasmonic wave on metallic interface. The optical characteristics of plasmonic waveguide were calculated using the three-dimensional finite-difference time-domain method. The plasmonic waveguide was fabricated with the lengths of 2 to $10{\mu}m$ and the widths of 400 to 700 nm, respectively. The plasmonic mode and optical loss were measured. The optimum plasmonic length is $10{\mu}m$ and widths are 600 and 700 nm in the fabricated waveguide. This plasmonic waveguide can be directly integrated with other conventional optical devices and can be essential building blocks of PIC.
Radio Frequency Plasma Power변화에 따른 ITO 특성 및 OLED의 광학적 특성
기현철,김회종,홍경진,김은미,구할본,Ki, Hyun-Chul,Kim, Hwe-Jong,Hong, Kyung-Jin,Kim, En-Mei,Gu, Hal-Bon 한국전기전자재료학회 2009 전기전자재료학회논문지 Vol.22 No.1
We has been analysed optical properties of OLED(organic light emitting diode) and characteristics of ITO(Indium Tin Oxide) in terms of $O_2$ plasma treatment for manufacturing high efficiency OLED, RF power of $O_2$ plasma was changed 25, 50, 100, 200 W. $O_2$ gas flow, gas pressure and treatment time were fixed. Sheet resistance and surface roughness of ITO were measured by Hall-effect measurement system and AFM, respectively. The ranges of sheet resistance and surface roughness were $5.5{\sim}6,06\;{\Omega}$ and $2.438{\sim}3.506\;nm$ changing of RF power, respectively, PM(Passive Matrix)OLED was fabricated with the structure of ITO(plasm treatment)/TPD($400\;{\AA}$)/$Alq_3(600\;{\AA})$/LiF($5\;{\AA}$)/Al($1200\;{\AA}$). Turn-on voltage of PMOLED was 7 V and luminance was $7,371\;cd/m^2$ at the RF power of 25 W, $O_2$ plasma treatment of ITO surface was result in lowering the operating voltage and improving luminance of PMOLED.
Reactive Ion Etching에 의한 ITO/반도체 및 ITO/BaTiO3 구조의 선택적 에칭 특성
한일기,이윤희,김회종,이석,오명환,이정일,김선호,강광남,박홍이,Han, Il-Ki,Lee, Yun-Hi,Kim, Hwe-Jong,Lee, Seok,Oh, Myung-Hwan,Lee, Jung-Il,Kim, Sun-Ho,Kang, Kwang-Nham,Park, Hong-Lee 대한전자공학회 1995 전자공학회논문지-A Vol.32 No.1
Eteching characteristics of the Indium Tin Oxide (ITO), which is transparent conductor, was investigated with CH4/H2 and Ar as etching gases for the Reactive Ion Etching (RIE). With CH4/H2 for the etching gas, the highly selective etching characteristics for the ITO on GaAs was obtained. It was examined that the dominant etching parameter for the selective etchning of ITO on GaAs structure was the chamber pressure. But, the etching selectivity for ITO on InP was poor eventhough we tried systematic etching. RIE etching conditins using CH4/H2 gas was limited due to the formation of polymer on the substrates. In the case of Ar gas for the reactive gas, the selectivity of ITO on BaTiO3 was above 10. The etch rete of ITO was more sensitive to the etching parameters than that of BaTiO3, which was almost constant with different etching parameters.
김두근(Doo Gun Kim),김선훈(Seon-Hoon Kim),기현철(Hyun-Chul Ki),김회종(Hwe-Jong Kim),오금윤(Geum-Yoon Oh),최영완(Young-Wan Choi) 대한전기학회 2010 전기학회논문지 Vol.59 No.5
We have investigated the grating coupled surface plasmon resonance (GC-SPR) sensors using ZnO nano-grating structures to enhance the sensitivity of an SPR sensor. The GC-SPR sensors were analyzed using the finite-difference time-domain method. The optimum resonance angles of 49 degrees are obtained in the 150 ㎚ wide grating structure with a period of 300 ㎚ for the ZnO thickness of 30 ㎚. Then, the ZnO nano-grating patterns were fabricated by using laser interference lithography. The measured resonance angle of nano-grating patterns was around 49 degrees. Here, an enhanced evanescent field is obtained due to the surface plasmon on the edge of the bandgap when the ZnO grating structures are used to excite the surface palsmon.
An optimal design of 4${\times}$4 optical matrix switch
최원준,홍성철,이석,김회종,이정일,강광남,조규만,Choi, Won-Jun,Hong, Song-Cheol,Lee, Seok,Kim, Hwe-Jong,Lee, Jung-Il,Kang, Kwang-Nham,Cho, Kyu-Man The Institute of Electronics and Information Engin 1995 전자공학회논문지-A Vol.32 No.8
The design procedure of a GaAs/AlGaAs semiconductor matrix optical switch is presented for a simplified tree architecture in the viewpoint of optical loss. A low loss, 0.537 dB/cm, pin type substrate is designed by considering the loss due to imputity doping at 1.3 $\mu$m wavelength. The operating voltage and the device length of a reversed ${\Delta}{\beta}$ electro-optic directional coupler(EODC) swith which is a cross-point device of the 4${\times}$4 matrix optical switch and the bending loss of rib waveguide are caculated as functions of waveguide parameters and bending parameters. There is an optimum bending radius for some waveguide parameters. It is recommened that higher optical confinement conditions such as wide waveguide width and higher rib-height should be chosen for structural parameters of a low loss and a process insensitive 4${\times}$4 matris optical switch. A 4${\times}$4 optical matrix switch which has a 3 dB loss and a 12 volt operating voltage is designed.
다층 박막을 이용한 패럴 단면의 무반사 코팅 설계 및 특성
기현철,양명학,김선훈,김태언,김회종,구할본,Ki, Hyun-Chul,Yang, Mung-Hark,Kim, Seon-Hoon,Kim, Tea-Un,Kim, Hwe-Jong,Gu, Hal-Bon 한국전기전자재료학회 2007 전기전자재료학회논문지 Vol.20 No.11
In this paper, we have designed the anti-reflection(AR) coating for $1400{\sim}1600$ nm wavelength range on the ferrule facet of optical connector. The low-temperature ion-assisted deposition was applied to AR coating on the ferrule facet in order to avoid damage of optical connector. We have measured the refractive index of coating film($Ta_2O_5\;and\;SiO_2$) using the ellipsometer and optimized the film thickness using the SEM and thickness measurement equipment. UV-VIS-NIR spectrophotometer is used to measure transmissivity of the AR coated ferrule facet. The refractive index of $Ta_2O_5\;and\;SiO_2$ is $2.123{\sim}2.125$ and $1.44{\sim}1.442$, respectively, for $1400{\sim}1600$ nm wavelength range. The transmissivity of the AR coated ferule facet is more than 99.8 % for $1425{\sim}1575$ nm wavelength range and more than 99.5 % for $1400{\sim}1600$ nm wavelength range. The return loss of the AR coated ferrule facet is 30.1 dB.
1.3μm 분포 괴환형 레이저 다이오드의 무반사 설계 및 특성
기현철,김선훈,홍경진,김회종,Ki, Hyun-Chul,Kim, Seon-Hoon,Hong, Kyung-Jin,Kim, Hwe-Jong 한국전기전자재료학회 2009 전기전자재료학회논문지 Vol.22 No.3
We have investigated the effect of the quality of 1.3 um distributed feed back laser diode (DFB-LD) on the design of anti-reflection (AR) coatings. Optimal condition of AR coating to prevent internal feedback from both facets and reduce the reflection-induced intensity noise of laser diode was simulated with Macleod Simulator. Coating materials used in this work were ${Ti_3}{O_5}$ and $SiO_2$, of which design thickness were 105 nm and 165 nm, respectively. AR coating films were deposited by Ion-Assisted Deposition system. The electrical and optical properties of 1.3 um laser diode were characterized by Bar tester and Chip tester. Threshold current and slop-efficiency of DFB-LD were 27.56 mA 0.302 W/A. Far field pattern and wavelength of DFB-LD were $22.3^{\circ}(Horizontal){\times}24.4^{\circ}$ (Vertical), 1313.8 nm, respectively.