3-(1,2,4-Triazol-5-yl)methylene-2-oxo-1,2,3,4,-tetrahydroquinoxaline의 간편한 합성에 관한 연구

金浩植,金恩慶,李城旭,金成湜,金銅恩 대구효성가톨릭대학교 1996 연구논문집 Vol.53 No.2

The reaction of 3-methoxycarbonylmethylene-2-oxo-1,2,3,4-tetrahydroquinoxaline(14) with hydrazine hydrate gave 3-hydrazinocarbonyl-methylene-2-oxo-1,2,3,4-tetrahydroquinoxaline(15), whose reaction with phenyl isothiocyanate provided 3-(4-phenyl-3,4-dihydro-3-thioxo-2H-1,2,4-triazol-5-yl)methylene-2-oxo-1,2,3,4-tetrahydroquinoxaline(16). The tautomeric behavior of compound 15 was investigated on the basis of the tautomer ratio determined by the ¹H-nmr spectral data. The structures of the synthesized compounds were confirmed on the basis of ir, ¹H-nmr and mass spectral data.

상추(Lactuca sativa L.)의 ACAT 억제 Diterpenoid, Phytol : 식용 식물자원으로부터 활성물질의 탐색 Development of Biologically Active Compound from Edible Plant Sources

장태오,방면호,송명종,홍윤희,김지영,정대균,배동근,권병목,김영국,이현선,김인호,백남인 한국농화학회 2003 Applied Biological Chemistry (Appl Biol Chem) Vol.46 No.1

통계적 접근을 통한 국제경쟁력 분석

김윤호,박동규,김재연 한국경영과학회 1990 經營 科學 Vol.7 No.1

In today's international society, growth and prosperity of a company can be achieved by enhancing international competitiveness. Evaluation technique for international competitiveness between companies is an important part of the methodology for enhancing international competitiveness within a company. Since it is not reasonable to evaluate the entire entity of competitiveness by considering only few aspects of the company, techniques must be developed for competitiveness evaluation by simultaneously considering many aspects of the company. In this article, two such techniques are presented. One select representative competitiveness indices, and the other evaluates competitiveness by utilizing the ranking method.

자기정렬공정에 의한 GaAs/ AlGaAs 광위상변조기의 제작 및 특성 측정

김병성,정영철,변영태,박경현,김선호,임동건 광운대학교 신기술연구소 1996 신기술연구소논문집 Vol.25 No.-

MOCVD(metal-organic chemical vapour deposition) 방법으로 성장시킨 이중 이종접합구조GaAs / AlGaAs 웨이퍼를 이용하여 광위상변조기를 제작하였다. 제작과정에서 도파로와 절연층의 형성시 동일 포토레지스트 패턴을 이용하는 자기정렬공정을 개발하여 그 효용성을 입증하였다. Fabry-Perot 간섭법을 이용하여 변조기의 위상변조효율을 측정하였으며, 1.31㎛ 파장에서 TE 편광의 경우 22.5˚/Vmm의 위상변조특성을 얻었다. An optical phase modulator is fabricated in GaAs / AlGaAs double heterostructure wafer grown by MOCVD. A self-aligned process, in which the same photoresist pattern is used for both the waveguide etching and the insulation layer formation, is developed and is found to be very useful. Fabry-Perot interference technique is applied to the measurement and the phase modulation efficiency is measured to be 22.5˚/Vmm at 1.31㎛ for TE polarization.

强靭鑄鐵의 熔接性에 關한 硏究

曺東震,韓俊澤,劉憲一,朴龍鎭,金錫胤,慶在浩 弘益大學校 1974 弘大論叢 Vol.6 No.-

The matrix of ductile cast iron are welded by pre-heating it at 300℃ in the room temperature. Through the mechanical, non-desbructive testing and analysis of the composition. the possibility if arc welding of ductile cast iron are studied as follows; 1. L electrode is the best among them in weldability, impact value and machinability. The next is LB electrode followed by S electrode. C electrode is last. However, the tensile strength showed in the following order: LB, S, L, C. 2. LB, S, L, C, all are available for the welding of cast iron. 3. The above experiment showed that L and LB are good in general. In addition LB is low in price, we therefore prospect that it will be widely used as the electrode for cast iron.

Valsalva洞 動脈瘤의 破裂

孫宜錫,金應瑞,宋昌燮,李聖浩,李寧均,朱東雲,Hewlett, Thomas H. 中央醫學社 1961 中央醫學 Vol.1 No.4

A case of ruptured aneurysm of a sinus of Valsalva is presented. The clinical diagnosis is made by the characteristic, clinical picture of sudden dyspnea and congestive heart failure in a previously healthy soldier and the presence of a characteristic continuous murmur at the left sternal boarder in the 3rd-4th intercostals space which appears to be a rather low, location for the murmur of patent ductus arteriosus. This clinical diagnosis was confirmed by right and left heart catheterization and retrograde aortography. On the X-ray film of retrograde aortography a direct communication between aorta and right ventricle was well demonstrated. A characteristic pressure pattern of early diastolic dip in the right ventricle in the presence of this abnormal communication was briefly discussed.

HPLC용 형광유도체화제인 1-(N,N-dimethylamino)pyrene-6-sulfonyl chloride를 이용한 GABA와 Glutamate의 HPLC분석에 관한 연구

이윤중,김용희,강동호,박귀례 성균관대학교 약학연구소 1991 成均藥硏論文集 Vol.3 No.1

Abstract-Fluorescent derivatives of amino acid neurotransmitter such as GABA and glutamate were synthesized using 1-(N,N-dimethylamino)pyrene-6-sulfonyl chloride (DAPS-Cl) as a derivatizing reagent. GABA and glutamate were derivatized quantitatively into fluorescent compounds by reacting with DAPS-Cl. The optimal conditions for the derivatization of GABA and glutamate with DAPS-Cl were estimated such as pH, reaction temperature and time, and the amount of DAPS-Cl. The derivatives were separated on a reverse phase column with a gradient elution using the 30 mM phosphate buffer and acetonitrile, and monitored by fluorescence detector. Calibration curves for GABA and glutamate exhibited good linearty over 1∼5 pmol. GABA and glutamate in hippocampus of rat brain were determined. After postmortem of rat brain, GABA increasing and glutamate decreasing in hippocampus were prevented 3-mercaptopropionic acid and microwave application.

단결정 Si(111) 위에 형성된 Ti-실리사이드에 대한 RBS 및 XRD 분석

이중환,권오준,최치규,박동수,김건호,이상환,이의완,곽호원 濟州大學校 基礎科學硏究所 1991 基礎科學硏究 Vol.4 No.1

초고진공 상태에서 p형 Si(111)기판에 Ti을 증착한 후 고진공에서 열처리하여 Ti-실리사이드를 형성시켰으며, Ti-실리사이드의 상전이 및 형성운동학은 2 MeV⁴He? 이온 후방산란과 x-선 회절방법으로 규명하였다. 형성된 TiSi₂는 결정학적으로 C49(ZrSi₂)와 C54 구조의 두 종류로 확인되었다. C49 TiSi₂상은 열처리온도가 700℃이하의 저온에서 형성되었고, 700℃ 이상의 고온에서는 C54 TiSi₂상으로 나타났다. 본 연구에서 확인된 C54 TiSi₂전이온도(??)는 700℃ 였고, TiSi₂형성온도 영역내에서 TiSi₂ 층두께(χ)와 열처리시간(t)의 관계는 저온(700℃ 이하)일 경우 ??이고, 고온(750℃ 이상)에서는 χ=ct+d 의 관계식이 만족됨을 알 수 있었다. 이것은 700℃ 이하에서 TiSi₂ 형성기구가 Si 확산에 의해 제어되며, 750℃ 이상에서는 핵형성 제어에 의하여 계면반응하는 것으로 나타났다. Titanium silicides were prepared by depositing titanium film on p-type Si(111) followed by annealing in ultra high vacuum. The growth kinetics of Ti-silicide has been studied by using ion backscattering spectrometry and x-ray diffractometry. Two crystallographic structures of Ti-silicide were identified the (ZrSi₂)structure and C54. The C49 TiSi₂ phase was formed at low annealing temperature(<700℃),and it transformed to the C54 phase over 700℃. The relation between the thickness of TiSi₂ layer(χ) and the annealing time(t) was ?? when annealing temperature was under 700℃ and χ=ct+d when that was over 750℃. The former implied that the formation of TiSi₂ was controlled by diffusion and the latter by nucleation of at the Ti/Si(111) interface.

FIRST ATLAS DOMESTIC STANDARD PROBLEM (DSP-01) FOR THE CODE ASSESSMENT

Kim, Yeon-Sik,Choi, Ki-Yong,Kang, Kyoung-Ho,Park, Hyun-Sik,Cho, Seok,Baek, Won-Pil,Kim, Kyung-Doo,Sim, Suk-K.,Lee, Eo-Hwak,Kim, Se-Yun,Kim, Joo-Sung,Choi, Tong-Soo,Kim, Cheol-Woo,Lee, Suk-Ho,Lee, Sang Korean Nuclear Society 2011 Nuclear Engineering and Technology Vol.43 No.1

KAERI has been operating an integral effect test facility, ATLAS (Advanced Thermal-Hydraulic Test Loop for Accident Simulation), for accident simulations of advanced PWRs. Regarding integral effect tests, a database for major design basis accidents has been accumulated and a Domestic Standard Problem (DSP) exercise using the ATLAS has been proposed and successfully performed. The ATLAS DSP aims at the effective utilization of an integral effect database obtained from the ATLAS, the establishment of a cooperative framework in the domestic nuclear industry, better understanding of thermal hydraulic phenomena, and an investigation of the potential limitations of the existing best-estimate safety analysis codes. For the first ATLAS DSP exercise (DSP-01), integral effect test data for a 100% DVI line break accident of the APR1400 was selected by considering its technical importance and by incorporating comments from participants. Twelve domestic organizations joined in this DSP-01 exercise. Finally, ten of these organizations submitted their calculation results. This ATLAS DSP-01 exercise progressed as an open calculation; the integral effect test data was delivered to the participants prior to the code calculations. The MARS-KS was favored by most participants but the RELAP5/MOD3.3 code was also used by a few participants. This paper presents all the information of the DSP-01 exercise as well as the comparison results between the calculations and the test data. Lessons learned from the first DSP-01 are presented and recommendations for code users as well as for developers are suggested.

Growth of Ti on Si(111)-7×7 Surface and the Formation of Epitaxial C54 TiSi_2 on Si(111) Substrate

Kim, Kun Ho,Kim, In Ho,Lee, Jeoung Ju,Seo, Dong Ju,Choi, Chi Kyu,Hong, Sung Rak,Yang, Soo Jeong,Park, Hyung Ho,Lee, Joong Hwan,Paek, Mun Cheol,Kwon, Oh Joon,Park, Tong Soo,Lee, Jeong Yong 慶尙大學校 기초과학연구소 1992 基礎科學硏究所報 Vol.8 No.-

고에너지 반사 전자회절기 (RHEED) 및 투과전자현미경(HRTEM)을 이용하여 Si(111)-7×7 면에서의 Ti박막의 성장 mode와 Si(111) 면에서의 C54 TiSi_2의 정합성장을 조사하였다. 초고진공에서 Si(111)-7×7 표면에 상온에서 Ti를 증착하면 Ti/Si 계면에서 비정질의 Ti-Si 중간막이 먼저 형성되고 그 위에 Ti 박막은 다결정으로 성장하였다. 160ML의 Ti 증착한 시료를 초고진공 내에서 750℃로 10분 열처리하면 C54 TiSi_2가 정합성장하였으며 이는HRTEM격자상 및 TED pattern으로 확인할 수 있었다. TiSi_2/(111) 시료를 다시 900℃로 가열하면 TiSi_2 위의 단결정 Si층이 [111] 방향으로 성장하였다. The growth of Ti on Si(111)-7×7 and the formation of epitaxial C54 TiSi_2 were investigated by using relfection high energy electron diffraction(RHEED) and high resolution transmission electron microscopy(HRTEM). Polycrystalline Ti layer is grown on the amorphous Ti-Si interlayer which is formed at the Ti/Si interface by Ti deposition on Si(111)-7×7 at room temperature (RT). HRTEM lattice image and transmission electron diffraction (TED) showed that epitaxial C54 TiSi_2 grown on Si substrate with 160 ML of Ti on Si(111)-7×7 surface at RT, followed by annealing at 750℃ for 10min in UHV. Thin single crystal Si overlayer with [111] direction is grown on TiSi_2 surface when TiSi_2/Si(111) is annealed at ∼900℃ in UHV. which was confirmed by Si(111)-7×7 superstructure.