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P2P 프록시 캐싱을 이용한 VOD 시스템의 성능 향상
최치규,이근정,최창열,최황규 강원대학교 정보통신연구소 2005 정보통신논문지 Vol.9 No.-
This paper proposes a new proxy caching scheme of VOD systems in P2P network environments. In our P2Proxy caching scheme, a proxy server is composed of a client group in which each client stores a part of stream receiving from a VOD server into its client buffer. Each streaming part of the clients is equal to a buffer size which is desired at request its hour. A single client receives the request stream from other clients as long as the parts of the stream are available in the client group. Otherwise, the missing parts of the stream which are not in the client group are directly received from the VOD server through another patching channel. In the experiments, we evaluate the performance of our proposed scheme and the result is compared with the existing P2P streaming systems.
최치규,현동걸 제주대학교 1986 논문집 Vol.23 No.-
A selenium thin film solar cell incorporates an ITO/CdSe/Se/Au structure and was fabricated bv vacuum evaporation. The CdSe layer was treated at 250℃ for 1 hour. and the crystalline form seem to be microcrystalline. Its resistivity was higher than 10^(7) Ω.cm. The cell characteristics were investigated by measuring I-V. C-V in the dark and under the illumination at 100mW/㎠. and the results obtained were η=6.8%. Voc=o. 22 volt. Isc=32x10^(-3)A. and F.F=O. 48 respectively. The structure of this cell is MIS type and the harrier heights deduced from saturation current Isc with I-V characteristics was 0.64eV.
최치규,김창영 한국물리학회 2008 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.53 No.1
In the multi-level wiring structure in ultra-large-scale integration circuits, a bottleneck against high-speed operation of the elements is the capacitance between wires. If the capacitance between wires is to be decreased, the dielectric constant of an interlayer insulating flm must be reduced. Among the low-dielectric-constant films, the SiOC(-H) film is an appropriate materials for the advanced Cu interconnects applications. In this study, we report the mechanical properties of SiOC(-H) thin films prepared with different substrate temperatures and deposited on p-type Si(100) substrates by using plasma-enhanced chemical vapor deposition (PECVD) with dimethoxy-dimethylsilane (DMDMS, C4H12O2Si) and oxygen gas as precursors. Nanoindentation studies were carried out in order to determine the mechanical properties of the SiOC(-H) films. The hardness and the elastic modulus of SiOC(-H) films prepared with different substrate temperatures were measured to be in the range of 2.25 - 4.5 and 20 - 35 GPa, respectively. The values of hardness and elastic modulus were observed to increase with increasing of substrate temperature. In the SiOC(-H) film, the -CH₃ group, as an end group, was broken when the substrate temperature was increased, thereby reducing the lm's density to increase the values of the mechanical properties. FTIR spectroscopy studies were carried out in the absorbance mode in the range of 400 to 4000 cm-1, which showed various bonding configurations, such as the Si-O-Si(C), the Si-CH₃, the -OH, the CHn bonds in the films. The dielectric constant of the SiOC(-H) films was investigated using a metal-insulator-semiconductor [MIS, Al/SiOC(-H)/p-Si(100)] structure at a 1 MHz frequency.
투명전도막 Cadmium Stannate의 특성에 관한 연구
최치규,김건호 濟州大學校 師範大學 科學敎育硏究所 1985 科學敎育 Vol.2 No.-
CTO(Cadmium Stannate Oxide) thin film were deposited onto borosilicate glass by chemical spray pyrolysis. The structure of the film had been identified as polycrystalline Cd_(2), SnO_(4), having(l30) (310) (321) (041) and (341) planes. The transmittanced of the films was more than 90% in visible range and the films reflect almost all of the infrared spectra beyond 2.8um . The refractive index of this film was 1.8 at 6,000Å and 2.2 at 5,l00Å. And the optical band gap were 2.85eV. Through annealing in Argon ambient the sheet resistance of the CTO films were lowed.
Au/CdTe Schottky Junction의 Barrier Height에 관한 연구
최치규,현동걸 濟州大學校 師範大學 科學敎育硏究所 1984 科學敎育 Vol.1 No.-
The effective barrier height Φ_(Bn) in a metal -semicondutor tunnel junction was obtained by the Bethe's thermionic emission theory. Au /CdTe Schottky juncticm was prepared on the slide glass coated with SnO_(2) by the C.V. D. methode, and the evarporation of CdTe was carried out in a vacunm of ~10^(-6) torr. Its current-voltage characteristics were investiga-ted in details at a room temperature. The barrier heights deduced from saturation current I_(SP) with I-V cha-racteristics was, Φ_(Bn) = 0.58eV, and ideality factor n = 1.7.
Effect of CF4 plasma treatment on fluorinated amorphous carbon films with a low dielectric constant
최치규,이광만,Heon Ju Lee,Ho Jeong Ko 한양대학교 세라믹연구소 2006 Journal of Ceramic Processing Research Vol.7 No.2
The a-C:F films were deposited on a p-type Si(100) substrate using an inductively coupled plasma chemical vapor deposition (ICPCVD) system with a mixture of CF4 and CH4 gases. A CF4 plasma treatment with various treatment times was carried out in situ for an as-deposited a-C:F film. The CF4 plasma treatment changed the bonding configuration of the a-C:F film from the fluorine-rich functional groups of C-Fx bonds to the carbon-rich functional groups of -CF-C-CFx bonds when the plasma treatment time was up to 30 s. However when the plasma treatment time was increased, the bonding structure induced a rearrangement of the chemical bonds forming carbon-rich functional groups in which C-F, C-F2 and C-F3 bonds decreased and the peak intensity of the C-C bond increased. The lowest dielectric constant of the a-C:F film was about 2.3 for 30 s plasma treatment time and the electronic susceptibility and the surface charge per electric field were found to be 1.09×10−11 C/V·m and 0.99×10−18 C·m/V, respectively.