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Stress Dependence of Thermal Stability of Nickel Silicide forNano MOSFETs
Ying-Ying Zhang,Won-Jae Lee,Zhun Zhong,Shi-Guang Li,Soon-Yen Jung,이가원,왕진석,이희덕,Sung-Kyu Lim 한국전기전자재료학회 2007 Transactions on Electrical and Electronic Material Vol.8 No.3
Dependence of the thermal stability of nickel silicide on the film stress of inter layer dielectric (ILD) layer has been investigated in this study and silicon nitride (Si3N4) layer is used as an ILD layer. Nickel silicide was formed with a one-step rapid thermal process at 500 oC for 30 sec. 2000 Å thick Si3N4 layer was deposited using plasma enhanced chemical vapor deposition after the formation of Ni silicide and its stress was split from compressive stress to tensile stress by controlling the power of power sources. Stress level of each stress type was also split for thorough analysis. It is found that the thermal stability of nickel silicide strongly depends on the stress type as well as the stress level induced by the Si3N4 layer. In the case of high compressive stress, silicide agglomeration and its phase transformation from the low-resistivity nickel mono-silicide to the high-resistivity nickel di-silicide are retarded, and hence the thermal stability is obviously improved a lot. However, in the case of high tensile stress, the thermal stability shows the worst case among the stressed cases.
Ying-Ying Zhang,Jungwoo Oh,Shi-Guang Li,Soon-Yen Jung,Kee-Young Park,Ga-Won Lee,Majhi, P.,Hsing-Huang Tseng,Jammy, R.,Hi-Deok Lee IEEE 2010 IEEE TRANSACTIONS ON NANOTECHNOLOGY Vol.9 No.2
<P>In this paper, thermally stable Ni germanide using a Ni-Pt(1%) alloy and TiN capping layer is proposed for high-performance Ge MOSFETs. The proposed Ni-Pt(1%) alloy structure exhibits low-temperature germanidation with a wide temperature window for rapid thermal processing. Moreover, sheet resistance is stable and the germanide interface shows less agglomeration despite high-temperature postgermanidation anneal up to 550 <SUP>°</SUP>C for 30 min. In addition, the surface of the Ni-Pt(1%) alloy structure is smoother than that of a pure Ni structure both before and after the postgermanidation anneal. Only the NiGe phase and no other phases such as Pt<SUB>x</SUB>Ge<SUB>y</SUB> and Ni<SUB>x</SUB>Pt<SUB>1-x</SUB>Ge<SUB>y</SUB> can be observed in X-ray diffraction results, but X-ray photoelectron spectroscopy shows that PtGe is formed during the postgermanidation anneal. The larger Pt atomic radius is believed to inhibit the diffusion of Ni into the Si substrate, thereby improving the thermal stability of the NiGe. The higher melting point of PtGe is also believed to improve thermal stability. Therefore, this proposed Ni-Pt(1%) alloy could be promising for high-mobility Ge MOSFET applications.</P>
Guang-ying Zhang,Hong-xia Zhu,En-miao Li,Hao Shi,Wei Liu,Lei Zheng,Zheng-wu Bai,Hong-yu Ding 대한영상의학회 2018 Korean Journal of Radiology Vol.19 No.2
Objective: To evaluate the correlation between the injury patterns of the medial patellofemoral ligament (MPFL) on magnetic resonance imaging in an acute first-time lateral patellar dislocation (LPD) and incidence of a second-time LPD. Materials and Methods: Magnetic resonance images were prospectively analyzed in 147 patients after an acute first-time LPD with identical nonoperative management. The injury patterns of MPFL in acute first-time LPDs were grouped by location and severity for the analysis of the incidence of second-time LPD in a 5-year follow-up. Independent t tests, chi-square tests and Kruskal-Wallis tests were performed as appropriate. Results: Forty-six cases (46/147, 31.3%) of second-time LPD were present at the 5-year follow-up. Fourteen (14/62, 22.6%) and 31 cases (31/80, 38.8%) were present in the partial and complete MPFL tear subgroups, respectively. Twenty-five cases (25/65, 38.5%), 11 cases (11/26, 42.3%), and 8 cases (8/47, 17%) were present in the isolated femoral-side MPFL tear (FEM), combined MPFL tear (COM), and isolated patellar-side MPFL tear (PAT) subgroups, respectively. Compared with the partial MPFL tears, complete tears showed higher incidence of a second-time LPD (p = 0.04). The time interval between the two LPDs was shorter in the complete MPFL tear subgroup (24.2 months) than in the partial tear subgroup (36.9 months, p = 0.001). Compared with the PAT subgroup, the FEM and COM subgroups showed a higher incidence of a second-time LPD (p = 0.025). The time intervals between the two LPDs were shorter in the FEM and COM subgroups (20.8 months and 19.2 months) than in the PAT subgroup (32.5 months, p = 0.049). Conclusion: A complete MPFL tear, isolated femoral-side tear and combined tear in a first-time LPD predispose a second-time LPD.
Ying-Ying Zhang,In-Shik Han,Shi-Guang Li,Soon-Yen Jung,박기영,신홍식,Ga-Won Lee,왕진석,이희덕,오정우,Prashant Majhi,Raj Jammy 한국물리학회 2009 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.55 No.3
In this research, the influence of an interlayer dielectric (ILD) capping layer on the thermal stability of Ni germanide was analyzed. The Ni germanide was formed on a Ge-on-Si substrate by using a one-step rapid thermal process (RTP) at 400 ˚C for 30 sec. We found little difference in the X-ray diffraction (XRD) results, but the proposed structure with oxide ILD capping layer showed better thermal immunity than that without one. Adopting an oxide ILD capping layer resulted in a lower sheet resistance, less surface roughness, and less Ni germanide agglomeration and penetration after high temperature post-germanidation annealing at 500 ˚C. Therefore, oxide capping is promising for improving the thermal stability of Ni germanide for nanoscale germanium metal oxide semiconductor field effect transistors (Ge MOSFETs).
Stress Dependence of Thermal Stability of Nickel Silicide for Nano MOSFETs
Zhang, Ying-Ying,Lee, Won-Jae,Zhong, Zhun,Li, Shi-Guang,Jung, Soon-Yen,Lee, Ga-Won,Wang, Jin-Suk,Lee, Hi-Deok,Lim, Sung-Kyu The Korean Institute of Electrical and Electronic 2007 Transactions on Electrical and Electronic Material Vol.8 No.3
Dependence of the thermal stability of nickel silicide on the film stress of inter layer dielectric (ILD) layer has been investigated in this study and silicon nitride $(Si_3N_4)$ layer is used as an ILD layer. Nickel silicide was formed with a one-step rapid thermal process at $500^{\circ}C$ for 30 sec. $2000{\AA}$ thick $Si_3N_4$ layer was deposited using plasma enhanced chemical vapor deposition after the formation of Ni silicide and its stress was split from compressive stress to tensile stress by controlling the power of power sources. Stress level of each stress type was also split for thorough analysis. It is found that the thermal stability of nickel silicide strongly depends on the stress type as well as the stress level induced by the $Si_3N_4$ layer. In the case of high compressive stress, silicide agglomeration and its phase transformation from the low-resistivity nickel mono-silicide to the high-resistivity nickel di-silicide are retarded, and hence the thermal stability is obviously improved a lot. However, in the case of high tensile stress, the thermal stability shows the worst case among the stressed cases.
Microstructural Innovation of Ni Germanide on Ge-on-Si Substrate by Using Palladium Incorporation
Zhang, Ying-Ying,Choi, Chel-Jong,Oh, Jungwoo,Han, In-Shik,Li, Shi-Guang,Park, Kee-Young,Shin, Hong-Sik,Lee, Ga-Won,Wang, Jin-Suk,Majhi, Prashant,Jammy, Raj,Lee, Hi-Deok The Electrochemical Society 2009 Electrochemical and solid-state letters Vol.12 No.11
Ying-Ying Zhang,Jungwoo Oh,In-Shik Han,Zhun Zhong,Shi-Guang Li,Soon-Yen Jung,Kee-Young Park,Hong-Sik Shin,Won-Ho Choi,Hyuk-Min Kwon,Wei-Yip Loh,Majhi, P.,Jammy, R.,Hi-Deok Lee IEEE 2009 IEEE transactions on electron devices Vol.56 No.2
<P>Highly thermally stable Ni germanide technology for high performance germanium metal-oxide-semiconductor field-effect transistors (Ge MOSFETs) is proposed, utilizing Pd incorporation into Ni germanide. The proposed Ni germanide shows not only the improvement of thermal stability but also the reduction of hole barrier height, which can improve the device on-current by reducing the Ni germanide to p+ source/drain contact resistance. The proposed Ni germanide showed a stable sheet resistance of up to 500 degrees C 30-min postgermanidation annealing due to the suppression of agglomeration and oxidation of Ni germanide and the diffusion of Ni and Ge atoms by the incorporated Pd. Therefore, the proposed Ni0.95Pd0.05, alloy could be promising for the high mobility Ge MOSFET applications.</P>
Ni Germanide Utilizing Ytterbium Interlayer for High-Performance Ge MOSFETs
Zhang, Ying-Ying,Oh, Jungwoo,Li, Shi-Guang,Jung, Soon-Yen,Park, Kee-Young,Shin, Hong-Sik,Lee, Ga-Won,Wang, Jin-Suk,Majhi, Prashant,Tseng, Hsing-Huang,Jammy, Raj,Bae, Tae-Sung,Lee, Hi-Deok The Electrochemical Society 2009 Electrochemical and solid-state letters Vol.12 No.1
Wang Lu,Dai Ying-Jie,Cui Yu,Zhang Hong,Jiang Chang-Hao,Duan Ying-Jie,Zhao Yong,Feng Ye-Fang,Geng Shi-Mei,Zhang Zai-Hui,Lu Jiang,Zhang Ping,Zhao Li-Wei,Zhao Hang,Ma Yu-Tong,Song Cheng-Guang,Zhang Yi,Ch 대한뇌졸중학회 2023 Journal of stroke Vol.25 No.3
Background and Purpose Intravenous tenecteplase (TNK) efficacy has not been well demonstrated in acute ischemic stroke (AIS) beyond 4.5 hours after onset. This study aimed to determine the effect of intravenous TNK for AIS within 4.5 to 24 hours of onset. Methods In this pilot trial, eligible AIS patients with diffusion-weighted imaging (DWI)-fluid attenuated inversion recovery (FLAIR) mismatch were randomly allocated to intravenous TNK (0.25 mg/kg) or standard care within 4.5–24 hours of onset. The primary endpoint was excellent functional outcome at 90 days (modified Rankin Scale [mRS] score of 0–1). The primary safety endpoint was symptomatic intracranial hemorrhage (sICH). Results Of the randomly assigned 80 patients, the primary endpoint occurred in 52.5% (21/40) of TNK group and 50.0% (20/40) of control group, with no significant difference (unadjusted odds ratio, 1.11; 95% confidence interval 0.46–2.66; <i>P</i>=0.82). More early neurological improvement occurred in TNK group than in control group (11 vs. 3, <i>P</i>=0.03), but no significant differences were found in other secondary endpoints, such as mRS 0–2 at 90 days, shift analysis of mRS at 90 days, and change in National Institutes of Health Stroke Scale score at 24 hours and 7 days. There were no cases of sICH in this trial; however, asymptomatic intracranial hemorrhage occurred in 3 of the 40 patients (7.5%) in the TNK group. Conclusion This phase 2, randomized, multicenter study suggests that intravenous TNK within 4.5–24 hours of onset may be safe and feasible in AIS patients with a DWI-FLAIR mismatch.
Guang-Jian Wang,Jian-Kang Zhang,Ying Liu 한국화학공학회 2013 Korean Journal of Chemical Engineering Vol.30 No.8
Catalytic oxidative desulfurization (Cat-ODS) of benzothiophene (BT) in n-octane has been investigated with hydrogen peroxide (H2O2) over catalysts of activated carbon (AC) supported iron oxide under mild conditions. The catalyst was characterized by N2 adsorption, XRD, SEM/EDS, TPR and XPS. Under the best operating condition for the catalytic oxidative desulfurization--temperature 60 oC, atmospheric pressure, 0.15 g Fe/AC, 18 molar ratio of hydrogen peroxide to sulfur, using acetonitrile as extraction solvent for double extraction--the sulfur content in model diesel fuel (MDF) was reduced from 700 ppmw to 30 ppmw with 95.66% of total sulfur was removed.