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      • KCI등재

        자기전기복합체의 비공진 및 공진 상태에서의 자기전기 결합 특성 평가 방법

        파틸디팍,류정호 한국전기전자재료학회 2022 전기전자재료학회논문지 Vol.35 No.4

        Magnetoelectric (ME) composites are comprised of magnetostrictive and piezoelectric phases. Lots of theoretical and experimental works have been done on ME composites in the last couple of decades. The output performance of ME composites has been enhanced by optimizing the constituent phases, interface layer, dimensions of the ME composites, different operating modes, etc. However, the detailed information about the characterization of ME coupling in ME composites is not provided yet. Therefore, in this tutorial paper, we are giving an insight into the details of measurements of ME voltage coefficient of ME composites both at off-resonance and resonance conditions. A symmetric type Gelfenol/PMN-PZT/Gelfenol ME composites were fabricated by sandwiching (011) 32-mode PMN-PZT single crystal between two Galfenol plates by epoxy bonding are used for the example of ME coupling measurement. The details about the experimental setup used for the measurement of ME voltage coefficient are provided. Furthermore, a step-by-step measurement of ME voltage coefficient using computerized program is demonstrated. We believe the present experimental measurement details can help readers to understand the concept of ME coupling and its analysis. 자기전기복합체(magnetoelectric, ME compositie)는 자왜재료와 압전재료의 결합현상을 이용하는 재료로서지난 20여 년간 이론적, 실험적으로 많은 연구가 진행되어 왔다. 자기전기복합체의 출력특성은 구성하는 소재, 계면층,복합체의 형상, 자기장하 진동모드 등의 많은 구성요소의 최적화를 통하여 급속히 향상되고 있다. 하지만 자기전기복합체의 자기전기 결합 특성 평가는 대부분의 연구들에서 구체적인 방법을 제시하지 않아 어떻게 측정한 것인지가 불명확한 경우가 많다. 본 논문에서는 자기전기복합체의 비공진, 공진상황에서 자기전기 전압계수를 어떻게 측정할 수 있는지에 대한 자세한 방법을 소개한다. 평가를 위한 샘플로서 대칭적인 구조를 가지는 Gelfenol/PMN-PZT/Gelfenol자기전기복합체를 제조하였다. 압전 재료로는 이방성의 (011) 32 모드의 PMN-PZT 압전 단결정과 자왜재료로는 Galfenol 합금을 사용하여 에폭시로 접착하였다. 컴퓨터 인터페이스로 자동화된 자기전기 전압특성 측정 시스템의 구성을 우선 설명하고, 자기전기 결합특성의 측정 방법을 단계별로 설명한다. 본 튜토리얼 논문에서는 자기전기결합 특성과 특성평가방법을 이해하고자 하는 연구자들에게 도움이 될 수 있는 평가방법의 원리와 절차를 제공하고자 하였다.

      • KCI등재

        MMIC에 적용되는 MIM 커패시터의 실리콘 질화막 증착과 전기적 특성

        성호근,소순진,박춘배 한국전기전자재료학회 2004 전기전자재료학회논문지 Vol.17 No.3

        We have fabricated MIM capacitors for MMIC applications, with capacitances as high as 600pF/$\textrm{mm}^2$ and excellent electrical properties of the insulator layer. Silicon nitride thin film is the desirable material for MMIC capacitor fabrication. Standard MIM capacitance in MMIC is 300pF/$\textrm{mm}^2$ with an insulator layer thickness of more than 2000$\AA$. However, capacitors with thin insulator layers have breakdown voltages as low as 20V. We have deposited insulator layers by PECVD in our MIM structure with an air bridge between the top metal and the contact pad. The PECVD process was optimized for fabricating the desired capacitors to be used in MMIC. Silicon nitride(Si$_{x}$N$_{y}$) thin films of about 1000$\AA$ thick show capacitances of about 600pF/$\textrm{mm}^2$, and breakdown voltages above 70V at 100nA.A.A.

      • Pb(Zr, Ti)$O_3$-Pb(Mg, Nb)$O_3$에 $MnO_2$첨가가 전기적 성질에 미치는 영향

        김현재,조봉희,정형진,박창엽 한국전기전자재료학회 1988 電氣電子材料學會誌 Vol.1 No.2

        Pb(Zr, Ti)O$^{3}$-Pb(Mg, Nb)O$^{3}$계에 MnO$_{2}$첨가량을 변화시켜 소결성, 미세구조, 유전상수, 비저항 및 압전특성에 미치는 영향을 XRD, EDAX 및 SEM을 이용하여 미세구조를 관찰하고 실험을 통하여 전기적 성질에 미치는 영향을 밝혔다. 비저항의 변화없이 그레인 성장이 억제되는 $MnO_{2}$의 첨가량은 0.4wt%이었으며 이때 분말의 합성이 촉진되어 소성된 시편의 밀도가 증가하였다. 그러나 고상반응의 범위를 벗어나는 과잉 $MnO_{2}$는 편석이 되어 그레인 경계상에 모임이 확인되었고 또한 기공을 형성하여 밀도를 낮추었다. $Mn^{+4}$는 $Mg^{+2}$ 와 치환되어 페로브스카이트 구조의 "A" 결핍을 유발하였으며 이것이 비저강을 감소시키는 원인으로 밝혀졌다.감소시키는 원인으로 밝혀졌다.

      • KCI등재

        3-3 진동 모드 압전 캔틸레버 에너지 하베스터의 제조 및 전기적 특성

        이민선,김창일,윤지선,박운익,홍연우,백종후,조정호,박용호,장용호,최범진,정영훈,Lee, Min-seon,Kim, Chang Il,Yun, Ji-sun,Park, Woon-ik,Hong, Youn-woo,Paik, Jong-hoo,Cho, Jeong-ho,Park, Yong-ho,Jang, Yong-ho,Choi, Beom-jin,Jeong, Young-hu 한국전기전자재료학회 2017 전기전자재료학회논문지 Vol.30 No.5

        A piezoelectric cantilever energy harvester (PCEH) driven in longitudinal (3-3) vibration mode was fabricated, and its electrical properties were evaluated by varying the resistive load. A commercial PZT piezoelectric ceramic with a high piezoelectric charge constant ($d_{33}$) of 520 pC/N and the interdigitated (IDT) electrode pattern was used to fabricate the PCEH driven in longitudinal vibration. The IDT Ag electrode embedded piezoelectric laminates were co-fired at $850^{\circ}C$ for 2 h. The 3-3 mode PCEH was successfully fabricated by attaching the piezoelectric laminates to a SUS304 elastic substrate. The PCEH exhibited a high output power of 3.8 mW across the resistive load of $100k{\Omega}$ at 100 Hz and 1.5 G. This corresponds to a power density of $10.3mW/cm^3$ and a normalized global power factor of $4.56mW/g^2{\cdot}cm^3$. Given the other PCEH driven in transverse (3-1) vibration mode, the 3-3 mode PCEH could be better for vibration energy harvesting applications.

      • KCI등재

        다양한 실리콘 웨이퍼 제조를 위한 와이어 전기 방전가공

        문희찬,최선호,박성희,장보윤,김준수,한문희,Moon, Hee-chan,Choi, Sun-ho,Park, Sung-hee,Jang, Bo-yun,Kim, Jun-soo,Han, Moon-hee 한국전기전자재료학회 2017 전기전자재료학회논문지 Vol.30 No.5

        Wire electrical discharge machining (WEDM) process was evaluated to slice Silicon (Si) for various applications. Specifically, various Si workpieces with various resistances, such as single and multi crystalline Si bricks and wafers were used. As conventional slicing processes, such as slurry-on or diamond-on wire slicing, are based on mechanical abrasions between Si and abrasive, there is a limitation to decrease the wafer thickness as well as kerf-loss. Especially, when the wafer thickness is less than $150{\mu}m$, wafer breakage increases dramatically during the slicing process. Single crystalline P-type Si bricks and wafers were successively sliced with considerable slicing speed regardless of its growth direction. Also, typical defects, such as microcracks, craters, microholes, and debris, were introduced when Si was sliced by electrical discharge. Also, it was found that defect type is also dependent on resistance of Si. Consequently, this study confirmed the feasibility of slicing single crystalline Si by WEDM.

      • KCI등재

        이온주입에 의한 진공성형 포장재의 전기전도 특성

        이재형,이찬영,길재근 한국전기전자재료학회 2003 전기전자재료학회논문지 Vol.16 No.11

        A study has been made of surface modification of various organic materials by ion implantation to increase the surface electrical properties. The substrate used were PP(polypropylene), PET(polyethylene teraphthalate), ECOP(ethylene copolyester), PS(polystyrene). N$_2$, Ar ion implantation was performed at energies of 40 and 50keV with fluences from 5${\times}$ 10$\^$15/ to 7${\times}$10$\^$16/ ions/$\textrm{cm}^2$ with and without H$_2$O gas environment. Surface resistance decrease of implanted polymers was affected by ion implantation energy, ion species, atmosphere of chamber and kind of polymer. In result, surface conductivity of polymers irradiated with atmosphere gas H$_2$O was 10 times more higher than normal vacuum atmosphere, but after 90 hours, surface conductivity returned to the without H$_2$O gas atmosphere condition caused by aging effect. After vacuum forming, surface resistance value was changed to over 10$\^$16/$\Omega$/$\square$, because creation of surface cracks.

      • KCI등재

        Fe-Phthalocyanine을 이용한 Carbon Nanofiber의 저온합성과 전계전자방출 특성

        류정탁 한국전기전자재료학회 2004 전기전자재료학회논문지 Vol.17 No.2

        Using Ar plasama and Fe-phthalocyanine, carbon nanofibers have been synthesized at a low temperature. Fe-phthalocyanine was used as a source material for this process. The carbon nanofibers were grown in random orientation with a diameter of about 100 nm and length up to 10${\mu}{\textrm}{m}$ on Si substrate. The synthesized carbon nanofibers exhibited excellent field emission characteristics. Protrusions with a nanometer size are observed at an angle of 60$^{\circ}$with respect to the nanofiber axis. Furthermore, we found the selective growth of nanofibers on a scratched substrates.

      • KCI등재

        열전지용 황철석(FeS<sub>2</sub>) 입자크기 변화에 따른 전기화학반응 메커니즘

        박병준,Park, Byeong June 한국전기전자재료학회 2017 전기전자재료학회논문지 Vol.30 No.4

        Pulverized $FeS_2$ (pyrite) gives different discharge test results with as-received $FeS_2$ electrodes. The as-received $FeS_2$ electrode shows three voltage plateaus during the discharge test. However, the ball-milled $FeS_2$ electrode shows two voltage plateaus. To interpret this result, the effect of $FeS_2$ particle size on electrochemical reactions is investigated by unit cell discharge tests, SEM and XRD. As a result, it is found that the transition reaction product ($Li_2+xFe+xS_2$) of $FeS_2$ explains the difference. The as-received $FeS_2$ reacts according to three reaction steps ($FeS_2{\rightarrow}Li_3Fe_2S_4{\rightarrow}Li_2+xFe_1+xS_2{\rightarrow}LiFe_2S_4$). However, ball-milled $FeS_2$ reacts without the $Li_2+xFe_1+xS_2$ stage. In this study, this result is explained by the difference in electrochemical reaction mechanism. The as-received $FeS_2$ has a larger radius than the ball-milled $FeS_2$. Therefore, the lithium ion has to diffuse into the $FeS_2$ unreacted core, and $Li_2+xFe_1+xS_2$, the transition reaction product of as-received $FeS_2$, is formed during this stage.

      • KCI등재

        Ba(Ti<sub>1-x</sub>Zr<sub>x</sub>)O<sub>3</sub> 세라믹스의 유전 및 전기열량 특성

        라철민,류주현,이지영,Ra, Cheol-Min,Yoo, Ju-Hyun,Lee, Jie-Young 한국전기전자재료학회 2017 전기전자재료학회논문지 Vol.30 No.4

        In this study, in order to develop composition ceramics for refrigeration device application at a temperature of less than $90^{\circ}C$, a $Ba(Ti_{1-x}Zr_x)O_3$ composition was fabricated using a conventional solid-state method. Electrocaloric properties of these ceramics were investigated using the characteristics of P-E hysteresis loops in a wide temperature range from room temperature to $150^{\circ}C$. The Curie temperature of $Ba(Ti_{1-x}Zr_x)O_3$ ceramics decreased with the increase of x. The maximum value of ${\Delta}T=0.07^{\circ}C$ in an ambient temperature of $85^{\circ}C$ under 30 kV/cm appeared when x = 0.125. It was concluded that the composition (x = 0.125) ceramics can be used for refrigeration device applications.

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