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OH, Jungwoo,HUANG, Jeff,OK, Injo,LEE, Se-Hoon,D. KIRSCH, Paul,JAMMY, Raj,LEE, Hi-Deok The Institute of Electronics, Information and Comm 2011 IEICE transactions on electronics Vol.94e.c No.5
<P>We have demonstrated high mobility MOS transistors on high quality epitaxial SiGe films selectively grown on Si (100) substrates. The hole mobility enhancement afforded intrinsically by the SiGe channel (60%) is further increased by an optimized Si cap (40%) process, resulting in a combined ∼100% enhancement over Si channels. Surface orientation, channel direction, and uniaxial strain technologies for SiGe channels CMOS further enhance transistor performances. On a (110) surface, the hole mobility of SiGe pMOS is greater on a (110) surface than on a (100) surface. Both electron and hole mobility on SiGe (110) surfaces are further enhanced in a <110> channel direction with appropriate uniaxial channel strain. We finally address low drive current issue of Ge-based nMOSFET. The poor electron transport property is primarily attributed to the intrinsically low density of state and high conductivity effective masses. Results are supported by interface trap density (D<SUB>it</SUB>) and specific contact resistivity (<I>ρ<SUB>c</SUB></I>).</P>
Won-Ho Choi,Chang-Young Kang,Jung-Woo Oh,Byoung-Hun Lee,Majhi, Prashant,Hyuk-Min Kwon,Jammy, Raj,Ga-Won Lee,Hi-Deok Lee IEEE 2010 IEEE electron device letters Vol.31 No.11
<P>Analyzed herein is the effect of different germanium (Ge) concentrations on negative bias temperature instability (NBTI) and channel hot carrier (CHC) degradations in high-performance Si1-xGex pMOSFETs. It is shown that higher concentrations result in less NBTI degradation due to the increased barrier height between the SiGe and high-k dielectric interface, but it causes greater CHC degradation due to the decreased channel bandgap with higher Ge concentrations. Therefore, the tradeoff between NBTI and HC degradations for different Ge concentrations should be considered when developing high-performance Si1- xGex pMOSFETs.</P>
강민호,Ying-Ying Zhang,박기영,Shi-Guang Li,Soon-Yen Jung,이가원,왕진석,오정우,Prashant Majhi,Raj Jammy SEMATECH,Hi-Deok Lee 한국물리학회 2009 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.55 No.1
Hydrogen (H) ion shower doping was proposed to improve the thermal stability of nickel germanide (NiGe), and its effects were analyzed in depth. As the post-germanidation annealing temperature was increased, the sheet resistance (Rsh) of the undoped sample increased sharply due to NiGe agglomeration while that of the H-doped samples showed a little increase at a temperature above 550℃ due to the suppression of NiGe agglomeration and Ni penetration. Hydrogen atoms in NiGe were found to significantly suppress local penetration of Ni atoms out of NiGe and hence contribute to the improvement the thermal stability of NiGe.
Review of alternative gate stack technology research during the last decade
Byoung Hun Lee1,Paul Kirsch,Husam Alshareef,Prashant Majhi,Rino Choi,Seungchul Song,Hsing Huang Tseng,Raj Jammy 한국세라믹학회 2006 세라미스트 Vol.9 No.4
Scaling of the gate stack has been one of the major contributors to the performance enhancement of CMOSFET devices in past technology generations The scalability of gate stack has diminished in recent years and alternative gate stack technology such as metal electrode and high-k dielectrics has been intensively studied during almost matches that of conventional SiO2-based gate dielectrics. However, many technical challenges remain to be resolved before alternative gate stacks can be introduced into mainstream technology. This paper reviews the reasearch in alternative gate stack technologies to provide insights for future reasearch.
Ying-Ying Zhang,In-Shik Han,Shi-Guang Li,Soon-Yen Jung,박기영,신홍식,Ga-Won Lee,왕진석,이희덕,오정우,Prashant Majhi,Raj Jammy 한국물리학회 2009 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.55 No.3
In this research, the influence of an interlayer dielectric (ILD) capping layer on the thermal stability of Ni germanide was analyzed. The Ni germanide was formed on a Ge-on-Si substrate by using a one-step rapid thermal process (RTP) at 400 ˚C for 30 sec. We found little difference in the X-ray diffraction (XRD) results, but the proposed structure with oxide ILD capping layer showed better thermal immunity than that without one. Adopting an oxide ILD capping layer resulted in a lower sheet resistance, less surface roughness, and less Ni germanide agglomeration and penetration after high temperature post-germanidation annealing at 500 ˚C. Therefore, oxide capping is promising for improving the thermal stability of Ni germanide for nanoscale germanium metal oxide semiconductor field effect transistors (Ge MOSFETs).
Ni Germanide Utilizing Ytterbium Interlayer for High-Performance Ge MOSFETs
Zhang, Ying-Ying,Oh, Jungwoo,Li, Shi-Guang,Jung, Soon-Yen,Park, Kee-Young,Shin, Hong-Sik,Lee, Ga-Won,Wang, Jin-Suk,Majhi, Prashant,Tseng, Hsing-Huang,Jammy, Raj,Bae, Tae-Sung,Lee, Hi-Deok The Electrochemical Society 2009 Electrochemical and solid-state letters Vol.12 No.1