불순물의 종류에 따른 형상기억합금의 열처리효과

박성근,유병길,진솽수,김기완 ( Sung Kun Park,Pyung Kil Yoo,Gwang Soo Jeen,Ki Wan Kim ) 한국센서학회 1997 센서학회지 Vol.6 No.6

For fine control of operating temperature of shape memory alloy, we investigated the effect of thermal temperature of shape memory alloy with the impurity kind. The martensitic transformation temperature in a Cu-17.257n-15Al and Cu-17.25Zn-15Al-1Ag/Fe was measured using electrical resistivity as a function of quenching temperature. Order-disorder phase transition temperatures in parent phase were measured and kind of transition were distinguised by DSC(differential scanning calorimeter) with heating rate variation. And structual changes were studied with XRD. For the Cu-17.25Zn-15Al shape memory alloy, the order-disorder phase transition temperature, T_(B2) and T_(L21) was 809K and 610K and for the Cu-17.25Zn-15Al-1Ag and Cu-17.25Zn-15Al-1Fe specimen T_(B2) and T_(L21) was 794K and 610K, and 803K and 613K, respectively. In all the specimens, quenching from near T_(B2) leads to an increase in martensitic temperature, whereas quenching from near T_(L21) leads to an decrease in martensitic temperature.

PLT ( PbLaTiO3 ) 초전재료 개발 ( 2 )

박성근,배승춘,김기완 ( Sung Kun Park,Seung Choon Bae,Ki Wan Kim ) 한국센서학회 1997 센서학회지 Vol.6 No.6

We fabricated the ceramic PLT tablet which was composed of 5, 10 and 15 mold lanthanum concentration and thin film PLT to develope pyroelectric materials, and investigated their characteristics. Using TG/DTA, we determined calcination and sintering temperature to sinter the PLT completely and to prevent volatilization of the Pb components. The calcination and sintering temperature were 850℃, 1150℃ respectively, end there was a lot of mass loss at higer sintering temperature. By measuring temperature-dielectric constant characteristics of ceramic tablet we investigated dielectric constant characteristics depends on La concentration. The Curie point of PLT with 5, 10 and 15 mol% lanthanum concentration were 330℃, 269℃ and 210℃ respectively. Using PLT cerarnie tablet we observed IR detection characteristics, and then deposited PLT thin film by rf magnetron sputtering. We verified that PLT thin film fabricated with completely sintered PLT target had the same structure to target by investigating lattice constant and optical transparency.

강박장애에서 LORETA 영상을 이용한 P300 국소원의 통계적 분석

박성근,최정석,유소영,이보름,강승석,노규식,하태현,권준수,Park, Sung-Kun,Choi, Jung-Seok,Yu, Soh-Young,Lee, Bo Reom,Kang, Seung-Suk,Roh, Kyu Sik,Ha, Tae-Hyun,Kwon, Jun Soo 대한생물정신의학회 2003 생물정신의학 Vol.10 No.2

Objectives:We investigated the characteristics of P300 generators in obsessive-compulsive disorder(OCD) patients by using voxel-based statistical parametric mapping of current density images. Methods:P300 generators, produced by a rare target tone of 1500Hz under a frequent non-target tone of 1,000Hz, were measured in 15 right-handed OCD patients and 15 controls. Low Resolution Electromagnetic Tomography(LORETA), using a realistic head model of the boundary element method based on individual MRI, was applied to the 128-channel EEG. Statistical parametric mapping(SPM) was applied for the statistical analysis. Results:We found that both groups had the mean current density of P300 in the parietal, temporal and prefrontal lobe. There was a trend for decreased current density in the prefrontal area in OCD patients. The statistical comparison showed current density increase in the supraparietal area, a statistically significant longer P300 latency and a trend for reduced P300 amplitude in OCD patients. Conclusion:It suggests that P300 source of both groups exists in multiple brain regions at the same time. And both groups had no statistically significant differences in the current density of P300 except for increased current density in the supraparietal area in OCD patients. But, considering the statistically significant longer P300 latency, a trend for reduced P300 amplitude and relative mean current density reduction in the prefrontal area in OCD patients, this study suggests that the frontal lobe may have a reduced normal inhibitory process in OCD patients.

PLT($PbLaTiO_{3}$) 초전재료 개발(II)

박성근,배승춘,김기완,Park, Sung-Kun,Bae, Seung-Choon,Kim, Ki-Wan 한국센서학회 1997 센서학회지 Vol.6 No.6

초전재료의 개발 및 박막화를 위하여 5, 10 및 15 mol%의 La 조성을 가지는 세라믹 PLT 시편 및 박막 PLT를 제조하여 그 특성을 분석하였다. PLT의 완전 소결과 Pb 성분의 휘발을 막기 위하여 TG/DTA를 사용하여 하소 및 소결온도를 결정하였다. PLT 세라믹 시편을 제조하기 위한 하소 및 소결온도는 각각 $850^{\circ}C$, $1150^{\circ}C$ 이고 더 높은 소결온도에서는 많은 질량 손실이 발생하였다. 세라믹 시편을 사용한 온도-유전율 특성의 측정으로 La 조성에 따른 PLT의 온도에 대한 유전특성을 조사하였다. 5, 10 및 15 mol%의 La 농도에 따라 PLT의 상전이점은 각각 $330^{\circ}C$, $269^{\circ}C$ 및 $210^{\circ}C$를 나타내었다. 제조된 PLT 시편을 사용하여 적외선 감지 특성을 확인하였고, 고주파 마그네트론 스퍼터링을 이용하여 PLT 박막을 증착하였다. 다음으로 격자상수 및 광투과 특성을 통하여 완전 소결된 PLT 타겟으로 제작한 PLT 박막은 타겟과 동일한 구조를 가지고 있음을 확인하였다. We fabricated the ceramic PLT tablet which was composed of 5, 10 and 15 mol% lanthanum concentration and thin film PLT to develope pyroelectric materials, and investigated their characteristics. Using TG/DTA, we determined calcination and sintering temperature to sinter the PLT completely and to prevent volatilization of the Pb components. The calcination and sintering temperature were $850^{\circ}C$, $1150^{\circ}C$ respectively, and there was a lot of mass loss at higher sintering temperature. By measuring temperature-dielectric constant characteristics of ceramic tablet we investigated dielectric constant characteristics depends on La concentration. The Curie point of PLT with 5, 10 and 15 mol% lanthanum concentration were $330^{\circ}C$, $269^{\circ}C$ and $210^{\circ}C$ respectively. Using PLT ceramic tablet we observed IR detection characteristics, and then deposited PLT thin film by rf magnetron sputtering. We verified that PLT thin film fabricated with completely sintered PLT target had the same structure to target by investigating lattice constant and optical transparency.

Rf - magnetron sputtering 방법을 이용한 c - 축 배향된 potassium lithium niobate 박막의 제작

박성근(Sung Kun Park),백민수(Min Soo Baek),배승춘(Seung Choon Bae),권성열(Sung Yeol Kwon),김지현(Jee Hyun Kim),김기완(Ki Wan Kim) 한국전기전자재료학회 1999 전기전자재료학회논문지 Vol.12 No.11

N/A N/A

ITO 기판위에 증착시킨 PLT 박막의 특성 및 그 응용

배승춘,박성근,최병진,김기완 ( Seung Choon Bae,Sung Kun Park,Byung Jin Choi,Ki Wan Kim ) 한국센서학회 1997 센서학회지 Vol.6 No.5

We fabricated PLT thin films on ITO substrate for flat pannel display and investigated the characteristics, then we applicated to electroluminescent device and investigated application possibility. When we fabricated PLT thin films with substrate temperature of 500℃, and pressure of 30 mTorr, the relative deielectric constant and breakdown electricfield of PLT thin films were 120 and 3.21MV/cm. The electric resistivity was 2.0x10^(12)Ω·cm. PLT thin films had polycrystal structure of perovslcite and pyrochlore at the higher substrate temperature than 4;i0 `C, and had good crystallinity at higher pressure. To use PLT insulator film and ZnS:Mn phosphor, we fabricated thin film electroluminescent device of ITO/PLT/ZnS:Mn/PLT/AI structure. At the result, threshold voltage was 35.2V_(max) and brightness was 2400cd/㎠ at 50V_(max) and 1kHz. Maximum luminescence efficiency was 0.811m/W.

한국인에서 미세단백뇨의 유병률 및 임상적 특성

김은란 ( Eun Ran Kim ),성기철 ( Ki Chul Sung ),전창욱 ( Chang Uk Chon ),권창희 ( Chang Hee Kwon ),고영율 ( Young Lyul Koh ),이현종 ( Hyun Jong Lee ),박성근 ( Sung Kun Park ),이도영 ( Do Young Lee ),윤지호 ( Ji Ho Yun ),김병진 ( By 대한내과학회 2006 대한내과학회지 Vol.70 No.6

목적: 미세단백뇨는 당뇨병이나 고혈압과 무관하게 심혈관 질환 발생 및 사망의 독립적 예후인자로 인식되고 있으나, 국내에서는 이와 관련된 보고가 부족한 실정이다. 본 연구는 국내 성인 건강검진 수진자들을 대상으로 미세단백뇨의 유병률 및 미세단백뇨와 인슐린 저항성, 심혈관 질환의 위험인자들과의 연관성에 대해 알아보고자 하였다. 방법: 2004년 1월부터 12월까지 강북삼성병원에서 종합검진을 받은 수진자 중 고혈압, 당뇨 등의 기왕력이 없는 총 5,915명(남 Background: Microalbuminuria (MA) is independent predictor of cardiovascular disease and it cause mortality regardless of the presence of diabetes (DM) and hypertension (HTN). However, few published studies on this topic have been reported in Korea. Theref

경질 초음파유도하의 경질 배액술을 이용한 난관 난소 농양의 치료

유인영(In Young Yoo),김상용(Sang Yong Kim),박성근(Seong Kun Park),갈철우(Cheol Woo Gal),박경원(Kyung Weon Park),이정형(Jeong Hyung Lee),김문종(Moon Jong Kim),성훈(Hoon Seong) 대한산부인과학회 2000 Obstetrics & Gynecology Science Vol.43 No.9

난소 난관 농양은 항생제만으로도 치료가 효과적일 수 있지만, 배농한 후에 항생제 병용치료할 때 더욱 치료 성적이 좋다. 배농의 방법은 여러 가지가 있으며, 여기에서는 본원에서 시행된 초음파 유도하에 이루어진 경질 배액술 5 예를 보고하고 임상적 의의를 살펴 보고자 한다. 1998년 1월부터 1999년 9월까지 난관 난소농양으로 진단 받고 초음파 유도하에 경질 배액술을 시행받은 환자의 입원기간, 합병증 발생유무, 시술후 합병증 등을 분석하였다. 시술한 환자들의 평균 연령은 32.4 세 였으며, 농양의 크기는 5-10 cm으로 다양하였고, 평균배농기간은 6.4 일 이었으며 시술중 합병증은 없었고, 시술후 3 개월간 초음파 추적결과 재발 및 수술이 필요한 경우는 없었다. 경질배액술을 이용한 난관 난소농양의 치료는 효과적이고도 안전하며, 농양이 질과 인접한 경우에는 더욱 손쉽게 시행할 수 있다. Often, women with Tuboovarian abscess (TOA) will reponse to antimicrobial therapy alone, additionally after drainage of abscess, antimicrobial therapy is more effective. Method of drainage is several, author present 5 cases that Tuboovarian abscess by transvaginal sonographically guided drainage in our hospital. From January 1998 to september 1999, transvaginal sonographic guidance proceduers for Tuboovarian abscess were successfully performed on 5 cases in a fluoroscopy room Equipments for the technique included a 18 gauge Chiba needle, plastic introducer tube, guide-wire and 18F multipurpose locking catheter. No major complication or recurrence were experienced. After initial catheter placement, patients became afebrile within 6 days ( average 3.4 days ). Catheters were removed within 10 days ( average 6 days ) after insertion. Five patients recovered without surgery and required no further treatment. Treatment of Tuboovarian abscess used by transvaginal sonographically guided drainage is effective and safe, in cases of close to vagina.

고휘도 백색방출 전계발광소자의 제작 및 특성

배승춘(Seung Choon Bae),김정환(Jeong Hwan Kim),박성근(Sung Kun Park),권성렬(Sung Yul Kwun),김우현(Woo Hyun Kim),김기완(Ki Wan Kim) 한국센서학회 1999 센서학회지 Vol.8 No.1

White emission thin film electroluminescent device was fabricated using ZnS for phosphor layer and BST ferroelectric thin film for insulating layer. For fabrication conditions of BST thin film, stoichiometry of target was Ba_90.5)Sr_(0.5)TiO₃, substrate temperature was 400 ℃, working pressure was 30 mTorr, and Ar:O₂ ratio was 9:1. At this time, dielectric constant was 209 at 1kHz frequency. For phosphor layer ZnS:Mn, ZnS:Tb, and ZnS:Ag were used. Mixing rates of activators were respectively 0.8, 0.8, and 1 wt%. Total thickness of phosphor layers was 500 nm, thickness of lower insulating layer was 200 nm, and thickness of upper insulating layer was 400 nm. In this conditions, luminescence threshold voltage of thin film electroluminescent device was 95 V_(rms), maximum brightness was 3,000 cd/㎡ at 150 V_(rms). Luminescence spectrum peak was observed at region of blue(450 nm), green(550 nm), and red(600 nm).

유량 센서를 위한 Pt/PtOx 박막제작과 그 특성

김호운,김정환,박성근,배승춘,김기완 경북대학교 센서기술연구소 1997 센서技術學術大會論文集 Vol.8 No.1

The Pt/PtOx thin film for flow sensor was fabricated using two step RF magnetron sputtering method. At first, a PtOx film was deposited on the SiO2 or Alumina plate in O2 ambient then a Pt film was deposited on the PtOx film in Ar ambient. According to the AES, the Oxygen concentration in PtOx was about 20%. PtOx film was buffer layer for good Pt adhesion. Incorporated oxygen was completely removed after an annealing at 700℃ or higher. The PtOx film was dull brown after annealing the film was silvery. After annealing the resistivity of film was approached the value of Pt film.