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RISS 인기검색어
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- 저자 : Gwang Soo Jeen (검색결과 15 건)
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Hot-Press法으로 제작된 B_(a)T_(i)O₃ Ceramics의 電氣的 性質
陳光守 부산대학교사범대학 1977 교사교육연구 Vol.4 No.2
The effects of Mn and Fe which were doped in the B_(a)T_(i)O_(3) ceramics, were investigated on its electric properties, with 30, 3, 0.3 and 0.03 mole% respectively. We found that dielectric constants decreased as the Fe mole% increased and that the Curie point of the 30 mole% Fe doped in the B_(a)T_(i)O_(3) ceramics were shown float peak. The hot-press sintering condition of the B_(a)T_(i)O_(3) ceramics which was doped 30 mole % Fe was determined with 1200℃-64㎏/㎠-4hrs. The electric properties of these hot-pressed B_(a)T_(i_O_(3) ceramics were different form its properties of the non-hot-pressed the same ceramics.
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Lithium Niobate(LiNbO₃) 단결정의 경도에 관한 연구
진광수,김창선,장민수 부산대학교 물성연구소 1984 물성연구소연구논문집 Vol.3 No.-
순수한 LiNbO3 단결정과 불순물 (Ti,Fe,Cr)을 첨가한 단결정의 X, Y, Z-면에 따른 경도를 Vickers 경도계로서 측정하였다. 본 실험에서 측정한, 순수한 이단결정의 Vickers 경도값 588.87 Kgf-mm^(-)²은, mohs경도치로 환산하면 5.5이다. 이 값은 Mohs 경도치 (H)와 bond-ionicity(α)와의 관계식 H=K(1-⅔α⁴)에 의한 계산치 5.3에 아주 가깝다. 또한 측정한 경도값들을 보면, 불순물을 첨가한 것이 순수한 것보다 그 값이 더 컸으며, 불순물 첨가에 관계없이 Z-positive, Y-positive, X, Z-negative, Y-negative면의 순으로 그 경도 값이 작아졌다. The hardness of LiNbO₃single crystal has been studied both theoretically and experimentally. Theoretical approach to the hardness of LiNbO₃ single crystal constitutes the application of an empirical relation,H=K(1-⅔α⁴)derived between the smoothed Mohs hardness value H and the bondionicity α. The calculated H-scale of LiNbO₃is theoretically 5.3 The experimental methods consist of micro Vicker hardness measurement and the chemical etching. The hardness measurements are made on x, y, and z-planes of pure and transition elements(Ti, Fe, and Cr) doped LiNbO₃single crystals. The average indentation hardness value of LiNbO₃single crystals is 588.87 kgf.mm^(-)². The chemical etching method is utilized to trace the relationship between etching rate and hardness on x, y, and z-planes of LiNbO₃single crystal.
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鐵(Fe) 單結晶 成分과 그 Dislocation Etch Pits
陳光守 부산대학교 1973 論文集 Vol.15 No.2
With the iron of purity 98.912%, 99.062%, I grew Fe-single crystal of dimensions of 1X0.5mm, appling a different method which was not usual. By electro-polishing the surface of Fe crystal, I observed the dislocation etch pits on the surface. The results are as follow; 1) Crystals grown in the temperature 1200℃ are 10 times larger than those grown under the temperature 900℃ by the usual methods. 2) The Fe crystals are grown in an air tight metal tube filled with iron powder; the dangerous H₂gas is not used in this method. 3) The etching solution 8M HNO₃was suitable on the Fe (Ⅲ) face and the etching solution, 16M HNO₃usually used on the copper(100) face was also found to be suitable on the Fe(100)face.
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Bi₂(MoO₄)₃단결정 b-plane의 Chemical Etching에 관한 연구
진광수,한광호,장민수 부산대학교 기초과학연구소 1987 부산대학교 기초과학연구소 연구논문집 Vol.7 No.-
Bi₂(Mo0₄)₃단결정을 질산과 불산을 혼합한 부식액들을 사용하여 온도와 시간을 달리하여 부식시켰다. Bi₂(Mo0₄)₃단결정의 b-plane에는 HF:HNO₃= 1:2인 부식액이 적합하였다. Et-ch pattern 들을 근거로 하여 Bi₂(Mo0₄)₃)의 결정구조를 논의하였고, 이 결정 b-plane의 vickers 경도값은 333kg·f/mm²이었다. B₂(Mo0₄)₃single crystals were etched at various temperatures and times using the etchants which are consisted of HNO₃and HF. The etchant, HF:HNO₃=1:2, is reliable solution in producing etch pits on b-plane of Bi₂(Mo0₄)₃ single crystals. The crystal structure is discussed on the basis if etch patterns. The Vickers hardness of b-plane of Bi₂(Mo0₄)₃single crystals is 333kg·f/mm²
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박효열,진광수,유병길,주정진,김중환 동의대학교 기초과학연구소 1994 基礎科學硏究論文集 Vol.4 No.1
Cd_1-xMn_xTe single crystals were grown by vertical Bridgman method and Mn mole fraction x was determined by the X-ray diffraction. Band gap and optical transition energies E₁, E₁+ △₁, E₂, △₁as Mn mole fraction x were obtained by measuring optical absorption and reflection at UV-visible region respectively. The change of the valence band spin-orbit splitting △₁at △ point of the Brillouin zone was discussed.
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Al 단결정육성 과정에 나타난 질량비와 강도에 관한 연구
진광수,황선주 부산대학교 1986 자연과학논문집 Vol.41 No.-
The multipass zone refining and the Bridgman technique were applied in the single crystal growing of aluminium. The optimum conditions can be summarized as follows; the temperature (760℃), the soaking time (4 hours), the pulling velocity (3~4cm/hr), and the pulling time (4 times). The hardness of the crystals were also studied. Especially the zinc doped aluminium single crystals showed a various hardness according to the impurty doping rate.
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진광수 부산대학교 1987 자연과학논문집 Vol.44 No.-
This paper deals with the growth of Cu single crystals by Bridgman technique and Cu crystals diffused with Zn. Observations were made on the (100) and (111) surfaces of the Cu single crystals and the boundaries of the Cu crystals diffused with Zn. Their hardnesses and electrical resistivities were also studied.
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진광수 부산대학교 1983 자연과학논문집 Vol.35 No.-
The rapid quenching of a close-packed metal from a high temperature should"freeze in" large number of lattice vacancies. The list of properties sensitive to point defects in metals should start with the by now classical method of studying quenched -in defects, namely, the electrical resitivity, ρ. 99.96% high gold wires of 0.5 mm diameters were heated to temperatures in the range from 700℃ to 1050℃ and then quenched to room temperature in water. An increase in the residual resistivity was observed which could be descrived by the equation △ρ=Ae^(-E)_(f)/^(KT)_(Q). Here K is Boltzmann's constant and TQ is the temperature from which the quenching was made. Plotting the data as 1n△ρ vs 1/T_(Q), we could find that the formation energy E_(F) and a constant A were equal to 0.96±0.02 ev and (3.0±0.4)×10^(-4) ohm-com, respectively. Also we found that the annealing kinetics were first order for quenches from 700℃ and were more complex for quenches from above this temperature.
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Al 再結晶化 過程에 있어서 電氣抵抗에 依한 結晶粒 成長機構에 關한 硏究(Ⅱ)
陳光守 부산대학교 1976 論文集 Vol.21 No.2
This paper attempts to examine closely the mechanism of the recrystallization in metal by investigating the electric resistance of Al. In order to investigate the change of property of Al during the growing stage, its eletric resistance was measured in the temperature range between 150℃ and 630℃. The specific resistance of Al whose length was elongated by 3.5% was found to be varied by 1.5% compared with what was not elongated.
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타원 분광기를 이용한 CdTe/GaAs 박막의 복소 유전함수에 관한 연구
진광수,조재혁,박효열,Jeen, Gwang-Soo,Jo, Jae-Hyuk,Park, Hyo-Yeol 한국결정성장학회 2005 한국결정성장학회지 Vol.15 No.4
Hot-wall epitaxy 법으로 GaAs 기판 위에 성장시킨 CdTe 박막을 실온에서 포톤에너지 1.5${\~}$5.5 eV 영역에서 타원 분광기로 복소 유전함수를 구하였다. 타원분광기의 스펙트럼에서는 $E_l,\;E_1+{\Delta}_1$, $E_2$의 임계점이 관찰되었으며 이들 에너지는 CdTe 박막의 두께가 증가함에 따라 감소하였다. Spectroscopic ellipsomerty measurements of the complex dielectric function of the CdTe thin films grown on GaAs(100) substrates by hot wall epitaxy have been performed in 1.5${\~}$5.5 eV photon energy range at room temperature. The spectroscopic ellipsometer spectra revealed distinct structures at energies of the $E_l,\;E_1+{\Delta}_1$, and $E_2$ critical points. These energies were decreased with increasing thickness of CdTe thin films.
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