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스퍼터링에 의해 제도된 PZT 박막에 있어서 Ta 첨가 효과
길덕신,주재현,주승기 한국세라믹학회 1994 한국세라믹학회지 Vol.31 No.8
Ta doped PZT thin films were prepared by a reactive sputtering method with a 3-gun magnetron co-sputter, and effects of Ta doping on physical and electrical properties of the films were studied. Within the doping range of 0 to 3.6 at%, Ta doping enhanced the crystallographic orientation of (110), but reduced that of (100). Ta doped PZT had a larger grain size of about 20 ${\mu}{\textrm}{m}$ compared with that of 5 ${\mu}{\textrm}{m}$ for un-doped PZT. Pits and holes of PZT films which used to appear with annealing at high temperature due to evaporation of PbO were much suppressed with addition of Ta. The leakage current could be reduced down to 1.27$\times$10-8 A/$\textrm{cm}^2$ and the charge storge density as large as 25.8$\mu$C/$\textrm{cm}^2$ was obtained.
PZT 박막의 급속열처리시 Pb 함량이 상변태에 미치는 영향
주재현,길덕신,주승기 한국세라믹학회 1993 한국세라믹학회지 Vol.30 No.10
PbxZr0.4Ti0.6O3 thin films were prepared by reactive co-sputtering and annealed by RTA(Rapid Thermal Annealing) process. Effect of Pb content in PbxZr0.4Ti0.6O3 films on the phase transformation was intensively studied. It has been found out that depending on the Pb content as well as RTA temperature, crystal structure of PbxZr0.4Ti0.6O3 films change greatly. It turned out that transformation temperature for perovskite can be lowered and the width of transition temperature region was reduced by increasing Pb content in the film. And the lattice was expanded with increasing Pb content. With increasing RTA temperature, as-deposited phase was transformed into perovskite through three different transformation paths depending on Pb content. It was confirmed that activation energies for nucleation of perovskite structure are much larger than those of its growth.
Co-sputtering으로 형성된 ZT/PZT/ZT 강유전체 다층막 구조의 특성에 관한 연구
주재현,길덕신,주승기 한국세라믹학회 1994 한국세라믹학회지 Vol.31 No.10
ZT/PZT/ZT multi-layered thin films were deposited on silicon substrate by co-sputtering method for FEMFET device application. Effects of Pb/(Zr+Ti) ratio, films thickness, annealing conditions and substrate temperature on the ferroelectric behavior of the multi-layered films were studied. The best memory device characteristics with leakage current of 2$\times$10-8 A/$\textrm{cm}^2$ and breakdown field of about 1 MV/cm could be obtained with ZT(250 $\AA$) / PZT(1000 $\AA$)/ZT(750 $\AA$) multi-layered thin film deposited at 35$0^{\circ}C$ and post-annealed at $700^{\circ}C$ for 120 sec by RTA(Rapid Thermal Annealing).