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      • KCI등재

        보건산업부문 기업부설 연구소의 동향

        홍상진,강탁림,Hong Sang-Jin,Kang Tak-Lim 대한예방한의학회 2002 대한예방한의학회지 Vol.6 No.1

        Health industry, a knowledge based high value-added industry, is being considered as a strategic area for the 21C and many advanced countries are making every endeavors for the promotion of health industry along with information technology, new materials, and mechatronics. Korean health industry, however, has been excluded from the governmental supports as well as bound by strict regulation so far, and there is a significant gap in technology compared with advanced countries. In 21C, technology is the main factor of national competitiveness and that is why the role of R&D institutes are so important in the high level of competition to cope with the technology protection policies of advanced countries. In this article, with Directory of Korean R&D Institutes published by Korea Industry Technology Association, I reviewed the trends of R&D institute of health industry. Main findings of the research can be summarized as follows. The portion of health industry R&D institute is 3.6% of total R&D institute but the amount of R&D investment is over than 5% This means health industry are knowledge based and R&D intensified industry, meanwhile the variations of same industry R&D institutes of health industry is huge in R&D investments and other activities. Regional distributions of health industry institutes show some kind of different patterns in each industry areas. Medical devices and Medical informatics's preference of metropolitan region are distinguished with other industry areas. Many of the institutes are located in same site of it's company rather than operating separate building for R&D specific uses. It is better for transforming ideas to products and close cooperation of research body with product lines, but it is a handicap for networking and communicating with other research institutions too. It takes 18.4yrs for bearing R&D institute on the average. For a long times 'copy products' or 'me too products' policies were easy way to maintain business entities. But recently, it is recognized that research activities are essential component of sustaining it's own business firms. This means technology itself is leading power of corporation itself in the high level of competition.

      • KCI등재후보

        종합일간지의 대체의학 관련 기사 보도 경향 분석

        홍상진,김영애 대한의료정보학회 2005 Healthcare Informatics Research Vol.11 No.4

        Objective: This study analyze the standpoint of newspapers toward alternative medicine. Methods: Through the content analysis of the articles selected by Korean Integrated News Database System(KINDS). With news items about alternative medicine in nine general dailies for six years between 1997 and 2002, this study was conducted to grasp the trend of the reports and provide investigation data to the alternative medicine communication. Results: As social concerns about health drastically increase, many types of health information and common senses in medicine are recently pouring out through various media. Newspapers and TV are competitively presenting items and programs about health every day. Now anyone can approach information and common senses in medicine with ease if he or she wants. The problem is that reports and programs about health pouring out through each medium contain a great amount of wrong information that can have a bad influence on national health. If wrong information is delivered to the people, or medical consumers, through the mass media, they can suffer from very serious side-effects and aftereffects. If patients or caregivers misled by false information on health commit an error in judgement, they can make their disease worse or miss the proper moment for treatment and consequently meet an irrevocable misfortune. For this reason, they must be careful in dealing with information on health. Conclusion: In consideration of results, many type of health information are expected to grow in the future. Therefore it is important for information providers to maintain a sound policy which is scientific and objective in order to protect information consumers. (Journal of Korean Society of Medical Informatics 11-4, 353-360, 2005)

      • KCI등재

        Multiple‐inputs Dual‐outputs Process Characterization and Optimization of HDP‐CVD SiO2 Deposition

        홍상진,Jong Ha Hwang,Sang Hyun Chun,한승수 대한전자공학회 2011 Journal of semiconductor technology and science Vol.11 No.3

        Accurate process characterization and optimization are the first step for a successful advanced process control (APC), and they should be followed by continuous monitoring and control in order to run manufacturing processes most efficiently. In this paper, process characterization and recipe optimization methods with multiple outputs are presented in high density plasma-chemical vapor deposition (HDP-CVD) silicon dioxide deposition process. Five controllable process variables of Top SiH4, Bottom SiH4, O2, Top RF Power, and Bottom RF Power, and two responses of interest, such as deposition rate and uniformity, are simultaneously considered employing both statistical response surface methodology (RSM) and neural networks (NNs)based genetic algorithm (GA). Statistically, two phases of experimental design was performed, and the established statistical models were optimized using performance index (PI). Artificial intelligently,NN process model with two outputs were established,and recipe synthesis was performed employing GA. Statistical RSM offers minimum numbers of experiment to build regression models and response surface models, but the analysis of the data need to satisfy underlying assumption and statistical data analysis capability. NN based-GA does not require any underlying assumption for data modeling;however, the selection of the input data for the model establishment is important for accurate model construction. Both statistical and artificial intelligent methods suggest competitive characterization and optimization results in HDP-CVD SiO2 deposition process, and the NN based-GA method showed 26%uniformity improvement with 36% less SiH4 gas usage yielding 20.8 Å/sec deposition rate.

      • KCI등재

        Statistical Qualitative Analysis on Chemical Mechanical Polishing Process and Equipment Characterization

        홍상진,Jong Ha Hwang,서동선 한국전기전자재료학회 2011 Transactions on Electrical and Electronic Material Vol.12 No.3

        Process characterization of the chemical mechanical polishing (CMP) process for undensified phosphosilicate glass (PSG) film is reported using design of experiments (DOE). DOE has been addressed to experimenters to understand the relationship between input variables and responses of interest in a simple and efficient way. It is typically beneficial for determining the adequate size of experiments with multiple process variables and making statistical inferences for the responses of interests. Equipment controllable parameters to operate the machine include the down force (DF) of the wafer carrier, pressure on the backside of the wafer, table and spindle speed (SS), slurry flow rate, and pad condition. None of them is independent; thus, the interaction between parameters also needs to be indicated to improve process characterization in CMP. In this paper, we have selected the five controllable equipment parameters,such as DF, back pressure (BP), table speed (TS), SS, and slurry flow (SF), most process engineers recommend to characterize the CMP process with respect to material removal rate (RR) and film uniformity as a percentage. The polished material is undensified PSG. PSG is widely used for the plananization in multi-layered metal interconnects. We identify the main effect of DF, BP, and TS on both RR and film uniformity, as expected, by the statistical modeling and analysis on the metrology data acquired from a series of 25-1 fractional factorial design with two center points. This revealed the film uniformity of the polished PSG film contains two and three-way interactions. Therefore, one can easily infer that the process control based on better understanding of the process is the key to success in semiconductor manufacturing, typically when the wafer size reaches 300 mm and is continuously scheduled to expand up to 450 mm in or little after 2012.

      • KCI등재

        Abnormal Detection in 3D-NAND Dielectrics Deposition Equipment Using Photo Diagnostic Sensor

        홍상진,강대원,백재근 한국반도체디스플레이기술학회 2022 반도체디스플레이기술학회지 Vol.21 No.2

        As the semiconductor industry develops, the difficulty of newly required process technology becomes difficult, and the importance of production yield and product reliability increases. As an effort to minimize yield loss in the manufacturing process, interests in the process defect process for facility diagnosis and defect identification are continuously increasing. This research observed the plasma condition changes in the multi oxide/nitride layer deposition (MOLD) process, which is one of the 3D-NAND manufacturing processes through optical emission spectroscopy (OES) and monitored the result of whether the change in plasma characteristics generated in repeated deposition of oxide film and nitride film could directly affect the film. Based on these results, it was confirmed that if a change over a certain period occurs, a change in the plasma characteristics was detected. The change may affect the quality of oxide film, such as the film thickness as well as the interfacial surface roughness when the oxide and nitride thin film deposited by plasma enhenced chemical vapor deposition (PECVD) method.

      • KCI등재

        Thin Film Characterization on Refractive Index of PECVD SiO2 Thin Films

        홍상진,공우혁,윤인천,이승재,최윤정 한국반도체디스플레이기술학회 2023 반도체디스플레이기술학회지 Vol.22 No.2

        Silicon oxide thin films have been deposited by plasma-enhanced chemical vapor deposition in SiH4 and N2O plasma along the variation of the gas flow ratio. Optical emission spectroscopy was employed to monitor the plasma and ellipsometry was employed to obtain refractive index of the deposited thin film. The atomic ratio of Si, O, and N in the film was obtained using XPS depth profiling. Fourier Transform Infrared Spectroscopy was used to analyze structures of the films. RI decreased with the increase in N2O/SiH4 gas flow ratio. We noticed the increase in the Si-O-Si bond angles as the N2O/SiH4 gas flow ratio increased, according to the analysis of the Si-O-Si stretching peak between 950 and 1,150 cm-1 in the wavenumber. We observed a correlation between the optical emission intensity ratio of (ISi+ISiH)/IO. The OES intensity ratio is also related with the measured refractive index and chemical composition ratio of the deposited thin film. Therefore, we report the added value of OES data analysis from the plasma related to the thin film characteristics in the PECVD process.

      • KCI등재

        임피던스 정합장치 내 위상센서를 이용한 RF정합 알고리즘 연구

        홍상진,김황규,양진우,강석호,최대호 한국반도체디스플레이기술학회 2022 반도체디스플레이기술학회지 Vol.21 No.2

        As semiconductors become finer, equipment must perform precise and accurate processes to achieve the desired wafer fabrication requirement. Radio frequency power delivery system in plasma system plays a critical role to generate the plasma, and the role of impedance matching unit is critical to terminate the reflected radio frequency power by modifying the impedance of the matching network in the plasma equipment. Impedance matching unit contains one fixed inductor and two variable vacuum capacitors whose positions are controlled two step motors. Controlling the amount of vacuum variable capacitor should be made as soon as possible when the mismatched impedance is detected. In this paper, we present the impedance matching algorithm using the phase sensor.

      • KCI등재

        Optical In-Situ Plasma Process Monitoring Technique for Detection of Abnormal Plasma Discharge

        홍상진,안종환,박원택,Gary S. May 한국전기전자재료학회 2013 Transactions on Electrical and Electronic Material Vol.14 No.2

        Advanced semiconductor manufacturing technology requires methods to maximize tool efficiency and improve product quality by reducing process variability. Real-time plasma process monitoring and diagnosis have become crucial for fault detection and classification (FDC) and advanced process control (APC). Additional sensors may increase the accuracy of detection of process anomalies, and optical monitoring methods are non-invasive. In this paper, we propose the use of a chromatic data acquisition system for real-time in-situ plasma process monitoring called the Plasma Eyes Chromatic System (PECS). The proposed system was initially tested in a six-inch research tool, and it was then further evaluated for its potential to detect process anomalies in an eight-inch production tool for etching blanket oxide films. Chromatic representation of the PECS output shows a clear correlation with small changes in process parameters, such as RF power, pressure, and gas flow. We also present how the PECS may be adapted as an in-situ plasma arc detector. The proposed system can provide useful indications of a faulty process in a timely and non-invasive manner for successful run-to-run (R2R) control and FDC.

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