한국의 4M DRAM 공동연구개발 사례연구(상(上))

주대영,Joo, Dae-Young 한국반도체디스플레이기술학회 2019 반도체디스플레이기술학회지 Vol.18 No.1

4M D램 공동연구 개발사업(1986.10~89.03)은 당시 미 일의 강력한 기술보호주의를 극복하기 위한 자구책으로 시작되었다. 국내 반도체업계는 선진국의 높은 기술장벽 및 기술보호주의를 극복하고, 강력한 경쟁력확보 및 기술축적을 위해 정부에 건의하였다. 이에 정부는 적극적인 자금지원을 통해 4M D램 개발 및 주변기술 개발을 목표로 초고집적반도체기술공동개발사업을 수행하게 되었다. 본 공동R&D사업은 ETRI의 주관으로 당시 금성반도체, 삼성전자, 현대전자산업 등의 반도체 업체와 학계가 참여하였고, 1986년 10월부터 1989년 3월까지 3단계에 걸쳐 수행되었다. 공동연구의 목적은 설계, 공정, 조립, 검사 등 4M D램 제조와 관련되는 기본기술개발과 함께 $0.8{\mu}m$ 선폭의 4M D램을 개발하는 것이며, 이를 위해 단계별 목표를 설정하고 관민연의 혼연일치로 추진되었다. 1차년에는 중요 핵심기술개발, 2차년에는 $0.8{\mu}m$ 4M D램 Working-die개발, 3차년에는 수율 20%의 $0.8{\mu}m$ 4M D램 양산시 제품을 목표대로 완료하였다. 각 연구단계별로 주요 핵심기술에 대한 연구평가가 실시되었으며, 관련기술에 대한 중복투자 방지를 위해 2차년도부터 분담연구가 수행되었고, 상호 기술공유를 위한 기술교류회가 활발히 이루어졌다. 또한 R&D수행을 통해 4M D램 Working-die를 2차년도 중반에 개발완료하였으며, 3차년도에는 4M D램의 20% 수율확보와 공정기술의 최적화 및 DB 구축을 수행했다. 공동R&D 방식에서도 기업간 경쟁체제 도입에 입각하여 동기유발 형태로 진행되었다. 정부는 자금적 지원으로 기업간의 경쟁 심리를 자극하는 전략을 추진했다. 선두기업인 삼성에게는 선행적 개발 지위에 비례하여 더 많은 지원을 부여하는 대신에, 삼성의 기술성과를 다른 기업에게로 확산시킴으로써 반도체 3사 전체의 기술능력을 향상시키는 전략을 추진했다. 본 사업이 성공적으로 수행되어 반도체 제품의 세계시장 점유율제고, 국제수지 개선, 반도체 핵심기술 조기확보뿐만 아니라 16M D램급 이상 차세대 반도체기술 개발의 교도보가 되었다.

플라즈마 디스플레이의 기술과 현황

강정원,김영섭 한국반도체디스플레이기술학회 2004 반도체디스플레이기술학회지 Vol.3 No.4

21세기에 접어들면서 Digital시험방송의 시작과 다양한 Contents의 유입으로 평판디스플레이 (Flat Panel Display)에 관한 관심과 수요가 증가하고 있다. 이 중 PDP는 90년대 후반부터 양산 및 개발을 시작하여 현재는 40 inch에서 60 inch 화면 크기의 제품을 시장에서 구입할 수 있으며, 03년도에는 80 inch 크기의 Proto-type Model을 공개한 바 있다. PDP는 40 inch 이상의 대면적 구현이 용이하다는 점, CRT와 동등 수준의 화상 구현이 가능하다는 점, 제조공법이 간단하고 제조원가가 저렴하다는 점 등을 특징으로 시장을 확대하고 있으나, 좀 더 대중적인 디스플레이가 되기 위해서는 고휘도 및 고효율화, 화질개선 그리고 저가격화 등과 같은 과제를 해결하여야 한다. 본 논문에서는 PDP의 개발역사 및 시장현황, 구조 및 구동 방법 그리고 해결과제 및 전망에 대해서 포괄적으로 살펴보기로 한다.

3-aminopropyltrimethoxysilane(APTMOS)을 코팅한 PET 필름의 산소차단성 연구

이성구,김현준,Lee, Sung-Koo,Kim, Hyun-Joon 한국반도체디스플레이기술학회 2009 반도체디스플레이기술학회지 Vol.8 No.2

The oxygen barrier films were formed on poly(ethylene terephthalate) (PET) substrate by a sol-gel process using 3-aminoproprytrimethoxysilane (APTMOS). The effects of solvent type, coating times and incorporation of fumed silica on oxygen permeability coefficient were investigated. The APTMOS coating film prepared from methanol as a solvent exhibited higher oxygen barrier properties than that using THF. The oxygen permeability coefficient of coated film with APTMOS/methanol by coating 7 times was measured to be $2.28{\times}10^{-6}$, while that of PET film was $1.16{\times}10^{-4}$ GPU. The addition of fumed silica does not affect the oxygen barrier properties. It may be explained that silica particles disrupt chain packing, which leads to an increase in free volume for permeation.

Impedance Matching Characteristic Research Utilizing L-type Matching Network

전대식,하준규,김보근 한국반도체디스플레이기술학회 2023 반도체디스플레이기술학회지 Vol.22 No.2

If an impedance mismatch occurs between the source and load in a Radio Frequency transmission system, reflected power is generated. This results in incomplete power transmission and the generation of Reflected Power, which returns to the Radio Frequency generator. To minimize this Reflected Power, Impedance matching is performed. Fast and efficient Impedance matching, along with converging reflected power towards zero, is advantageous for achieving desired plasma characteristics in semiconductor processes. This paper explores Impedance matching by adjusting the Vacuum Variable Capacitor of an L-type Matching Module based on the trends observed in the voltage of the Phase Sensor and Electromotive Force voltage. After assessing the impedance matching characteristics, the findings are described.

화학-기계적 연마 공정의 물질제거 메커니즘 해석 Part II: 동적 시뮬레이션

석종원,오승희,Seok, Jong-Won,Oh, Seung-Hee 한국반도체디스플레이기술학회 2007 반도체디스플레이기술학회지 Vol.6 No.3

The integrated thermal-chemical-mechanical (TCM) material removal model presented in the companion paper is dynamically simulated in this work. The model is applied to a Cu CMP process for the simulation and the results of the three individual ingredients composing the model are presented separately first. These results are then incorporated to calculate the total material removal rate (MRR) of the Cu CMP. It is shown that the non-linear trend of MRR with respect to the applied mechanical power (i.e., non-Prestonian behavior), which is not well explained with the models established in principle on conventional contact mechanics, may be due to the chemical reaction(s) varying non-linearly with the temperature in the wafer.

Structural, morphological and electrical properties of TiO2 thin films deposited by ALD method

정범석,오승연,신재민,나경훈,권민석 한국반도체디스플레이기술학회 2023 반도체디스플레이기술학회지 Vol.22 No.2

TiO2 thin films were grown using the Atomic Layer Deposition (ALD) and their structural and electrical properties were investigated. The crystal structure, dielectric constant, and surface roughness of the TiO2 thin films grown by the ALD deposition method were studied. The grown TiO2 thin films showed an anatase crystal structure, and their properties varied with temperature. In particular, the properties of the TiO2 thin films were confirmed by changing the process temperature. The electrical properties of Metal-Insulator-Silicon (MIS) capacitor structures were analyzed using a probe station. The performance improvement of capacitors using TiO2 as a dielectric was confirmed by measuring capacitance through Capacitance-Voltage (C-V) curves.

Thin Film Characterization on Refractive Index of PECVD SiO2 Thin Films

홍상진,공우혁,윤인천,이승재,최윤정 한국반도체디스플레이기술학회 2023 반도체디스플레이기술학회지 Vol.22 No.2

Silicon oxide thin films have been deposited by plasma-enhanced chemical vapor deposition in SiH4 and N2O plasma along the variation of the gas flow ratio. Optical emission spectroscopy was employed to monitor the plasma and ellipsometry was employed to obtain refractive index of the deposited thin film. The atomic ratio of Si, O, and N in the film was obtained using XPS depth profiling. Fourier Transform Infrared Spectroscopy was used to analyze structures of the films. RI decreased with the increase in N2O/SiH4 gas flow ratio. We noticed the increase in the Si-O-Si bond angles as the N2O/SiH4 gas flow ratio increased, according to the analysis of the Si-O-Si stretching peak between 950 and 1,150 cm-1 in the wavenumber. We observed a correlation between the optical emission intensity ratio of (ISi+ISiH)/IO. The OES intensity ratio is also related with the measured refractive index and chemical composition ratio of the deposited thin film. Therefore, we report the added value of OES data analysis from the plasma related to the thin film characteristics in the PECVD process.

TRIZ를 활용한 유아 및 노약자를 위한 안전감지시스템 개발에 관한 연구

이국환,이경원,Lee, Kook-Hwan,Lee, Kyeong-Won 한국반도체디스플레이기술학회 2008 반도체디스플레이기술학회지 Vol.7 No.1

There are no products, systems to manage health and detect security for infant, the old and the weak in Korea. Recently, the concerns of parents are increasing more about all of children(baby, infant, etc) because rate of birth is decreasing gradually. Also, the average span of human life is on an increasing trend according to well-being and evolution of medical treatment. Therefore, this treatise analyzed problems in managing and following-up infant, the old and the weak at present. By using TRIZ to solve problems, we devised new conceptional ideas, detail designs to manage health, detect security, cope with correspondences for them and developed the prototype and tested it. Excellent performances are proved through various field test.

Image processing and deep learning-based defect detection theory for Sapphire Epi-Wafer in Green LED manufacturing

김가람,고석주,김지우,우지수,홍상진 한국반도체디스플레이기술학회 2023 반도체디스플레이기술학회지 Vol.22 No.2

Recently, there has been an increased demand for light-emitting diode (LED) due to the growing emphasis on environmental protection. However, the use of GaN-based sapphire in LED manufacturing leads to the generation of defects, such as dislocations caused by lattice mismatch, which ultimately reduces the luminous efficiency of LEDs. Moreover, most inspections for LED semiconductors focus on evaluating the luminous efficiency after packaging. To address these challenges, this paper aims to detect defects at the wafer stage, which could potentially improve the manufacturing process and reduce costs. To achieve this, image processing and deep learning-based defect detection techniques for Sapphire Epi-Wafer used in Green LED manufacturing were developed and compared. Through performance evaluation of each algorithm, it was found that the deep learning approach outperformed the image processing approach in terms of detection accuracy and efficiency.

Stretched-Exponential 형태의 문턱전압 이동 모델의 SPICE구현

정태호,Jung, Taeho 한국반도체디스플레이기술학회 2020 반도체디스플레이기술학회지 Vol.19 No.1

Threshold voltage shift occurring during operation is implemented in a SPICE simulation tool. Among the shift models the stretched-exponential function model, which is frequently observed from both single-crystal silicon and thin-film transistors regardless of the nature of causes, is selected, adapted to transient simulation, and added to BSIM4 developed by BSIM Research Group at the University of California, Berkeley. The adaptation method used in this research is to select degradation and recovery models based on the comparison between the gate and threshold voltages. The threshold voltage shift is extracted from SPICE transient simulation and shows the stretched-exponential time dependence for both degradation and recovery situations. The implementation method developed in this research is not limited to the stretched-exponential function model and BSIM model. The proposed method enables to perform transient simulation with threshold voltage shift in situ and will help to verify the reliability of a circuit.