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Characterization of Ultra-Thin HfO2 Gate Oxide Prepared by Using Atomic Layer Deposition
TaehoLee,안진호,JaeminOh,YangdoKim,Young-BaeKim,Duck-KyunChoi,JaehakJung 한국물리학회 2003 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.42 No.III
Ultra-thin hafnium-oxide lms were deposited by using atomic layer deposition. The impurity distribution and the lm properties were studied in the deposition temperature range between 200 C and 400 C. Suppressed crystallization with eective Cl impurity reduction was obtained at medium temperature (300 C), which resulted in a hafnium-oxide lm with a low leakage current (2.06*10-7A/cm2 at -2.0 MV/cm) and a small equivalent oxide thickness value (23.9 A) at the same time.
Soo‑Bae Kim,Young‑Hee Cho,Jae‑Gil Jung,Woon‑Ha Yoon,Young‑Kook Lee,Jung‑Moo Lee 대한금속·재료학회 2018 METALS AND MATERIALS International Vol.24 No.6
Ultrasonic melt treatment (UST) was applied to an A390 hypereutectic Al–Si alloy in a temperature range of 750–800 °Cand its influence on the solidification structure and the consequent increase in strength was investigated. UST at such a hightemperature, which is about 100 °C above the liquidus temperature, had little effect on the grain refinement but enhanced thehomogeneity of the microstructure with the uniform distribution of constituent phases (e.g. primary Si, α-Al and intermetallics)significantly refined. With the microstructural homogeneity, quantitative analysis confirmed that UST was found tosuppress the formation of Cu-bearing phases, i.e., Q-Al5Cu2Mg8Si6, Al2Cuphases that form in the final stage of solidificationwhile notably increasing the average Cu contents in the matrix from 1.29 to 2.06 wt%. A tensile test exhibits an increasein the yield strength of the as-cast alloy from 185 to 208 MPa, which is mainly associated with the solute increment withinthe matrix. The important role of UST in the microstructure evolution during solidification is discussed and the mechanismcovering the microstructure-strengthening interrelationship of the ultrasonically treated A390 alloy is proposed.