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RISS 인기검색어
- 검색키워드
- 저자 : Yong-Lai Park (검색결과 54 건)
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Seon Min Park,Eun Young Kim,Yong Lai Park,Chan Heun Park 한국유방암학회 2022 Journal of Breast Disease Vol.10 No.1
Purpose: This study investigated the correlation between non-mass-like enhancement (NME) observed on preoperative breast magnetic resonance imaging (MRI) and the actual pathological size of breast cancer. We further examined the effect of NME on the positive resection margins during partial mastectomy. Methods: We retrospectively collected data from breast cancer patients who underwent surgery between January 2018 and September 2020. Patients were divided into two groups based on their MRI findings: NME and no-NME (mass-like lesion only) groups. The medical records, including MRI findings and clinicopathological information of patients, were collected retrospectively, and correlations with pathologic results were analyzed. Propensity score matching was applied to develop comparable cohorts of the NME group and no-NME group. Results: This study included a total of 317 patients, with 66 and 251 patients in the NME and no-NME groups, respectively. The mean pathologic size of invasive lesion was significantly smaller than the mean lesion size in the NME group (1.55±1.39 cm vs. 3.45±1.81 cm, p<0.001). The mean pathologic size of ductal carcinoma in situ (DCIS) lesions was larger than that in the NME group but without statistical significance (3.91±2.67 cm vs. 3.50±1.79 cm, p=0.326). In the NME group, NME estimated DCIS size to within 1 cm in 20 patients (30.3%) and overestimated invasive lesion size by more than 1 cm in 31 patients (46.9%). NME (vs. no-NME; odds ratio [OR], 2.967; 95% confidence interval [CI], 0.878-10.025) showed a tendency to predict positive resection margins, but this was not statistically significant (p=0.080). Conclusion: NME findings on MRI showed a similar extent of DCIS lesions. NME findings on preoperative MRI should be considered an important factor for measuring the extent of tumors, especially in DCIS patients.
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Lai, Shen,Byeon, Seongjae,Jang, Sung Kyu,Lee, Juho,Lee, Byoung Hun,Park, Jin-Hong,Kim, Yong-Hoon,Lee, Sungjoo The Royal Society of Chemistry 2018 Nanoscale Vol.10 No.39
<P>While preparing uniform dielectric layers on two-dimensional (2D) materials is a key device architecture requirement to achieve next-generation 2D devices, conventional deposition or transfer approaches have been so far limited by their high cost, fabrication complexity, and especially poor dielectric/2D material interface quality. Here, we demonstrate that HfO2, a high-K dielectric, can be prepared on the top surface of 2D HfS2 through plasma oxidation, which results in a heterostructure composed of a 2D van der Waals semiconductor and its insulating native oxide. A highly uniform dielectric layer with a controlled thickness can be prepared; the possibility of unlimited layer-by-layer oxidation further differentiates our work from previous attempts on other 2D semiconducting materials, which exhibit self-limited oxidation up to only a few layers. High resolution transmission electron microscopy was used to show that the converted HfO2/HfS2 hybrid structure is of high quality with an atomically abrupt, impurity- and defect-free interface. Density functional theory calculations show that the unlimited layer-by-layer oxidation occurs because oxygen atoms can barrierlessly penetrate into the HfS2 surface and the extracted sulfur atoms are absorbed into the oxygen vacancy sites within HfO2 under O-rich conditions. A top-gated field-effect transistor fabricated with the converted HfO2/HfS2 hybrid structure was found to exhibit a low interface trap density <I>D</I>it of 6 × 10<SUP>11</SUP> cm<SUP>−2</SUP> eV<SUP>−1</SUP> between the HfS2 channel and the converted HfO2 dielectric, and a high on/off current ratio above 10<SUP>7</SUP>. Our approach provides a low cost, simple, and ultraclean manufacturing technique for integrating 2D material into device applications.</P>
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Won Park, Jong,Hyeok Jeong, Jin,Yoon, Wang Lai,Kim, Chang Soo,Lee, Deuk Ki,Park, Yong-Ki,Rhee, Young Woo Elsevier 2005 International journal of hydrogen energy Vol.30 No.2
<P><B>Abstract</B></P><P>Cu–Ce/<I>γ</I>-Al<SUB>2</SUB>O<SUB>3</SUB> catalysts promoted with Co were tested for the low temperature selective oxidation of CO in excess hydrogen. The effects of Cu–Ce composition, Co as a dopant, stoichiometric ratio (<I>λ</I>=2O<SUB>2</SUB>/CO), water vapor and CO<SUB>2</SUB> on the selective oxidation of CO to CO<SUB>2</SUB>, O<SUB>2</SUB> consumption and selectivity of O<SUB>2</SUB> to CO oxidation as a function of temperature are presented. Also, the catalytic properties of the catalysts were investigated by using X-ray diffraction, CO-/H<SUB>2</SUB>-temperature programmed reduction, temperature programmed oxidation, CO-/CO<SUB>2</SUB>-/H<SUB>2</SUB>O-temperature programmed desorption (TPD). Small addition (0.2wt) of Co onto the Cu–Ce/<I>γ</I>-Al<SUB>2</SUB>O<SUB>3</SUB> brought large increase in selective CO oxidation activity. In the presence of either CO<SUB>2</SUB> (13 vol%) or H<SUB>2</SUB>O (10 vol%) in the reformed gas feed, both Cu–Ce/<I>γ</I>-Al<SUB>2</SUB>O<SUB>3</SUB> and Cu–Ce-Co/<I>γ</I>-Al<SUB>2</SUB>O<SUB>3</SUB> showed decreased activity in CO oxidation at low temperatures, especially, under 200°C. Compared with the Cu–Ce/<I>γ</I>-Al<SUB>2</SUB>O<SUB>3</SUB>, however, the Cu–Ce-Co/<I>γ</I>-Al<SUB>2</SUB>O<SUB>3</SUB> gives higher resistivity for the CO<SUB>2</SUB> and H<SUB>2</SUB>O. From the CO<SUB>2</SUB>/H<SUB>2</SUB>O-TPD results, it could be explained that the main cause for the decrease in catalytic activity with CO<SUB>2</SUB> and H<SUB>2</SUB>O in the feed may be attributed to the competitive adsorption of CO and CO<SUB>2</SUB> as well as the blockage of the active sites by water vapor at low reaction temperatures.</P>
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