Analysis of Random Variations and Variation-Robust Advanced Device Structures

Nam, Hyohyun,Lee, Gyo Sub,Lee, Hyunjae,Park, In Jun,Shin, Changhwan The Institute of Electronics and Information Engin 2014 Journal of semiconductor technology and science Vol.14 No.1

In the past few decades, CMOS logic technologies and devices have been successfully developed with the steady miniaturization of the feature size. At the sub-30-nm CMOS technology nodes, one of the main hurdles for continuously and successfully scaling down CMOS devices is the parametric failure caused by random variations such as line edge roughness (LER), random dopant fluctuation (RDF), and work-function variation (WFV). The characteristics of each random variation source and its effect on advanced device structures such as multigate and ultra-thin-body devices (vs. conventional planar bulk MOSFET) are discussed in detail. Further, suggested are suppression methods for the LER-, RDF-, and WFV-induced threshold voltage (VTH) variations in advanced CMOS logic technologies including the double-patterning and double-etching (2P2E) technique and in advanced device structures including the fully depleted silicon-on-insulator (FD-SOI) MOSFET and FinFET/tri-gate MOSFET at the sub-30-nm nodes. The segmented-channel MOSFET (SegFET) and junctionless transistor (JLT) that can suppress the random variations and the SegFET-/JLT-based static random access memory (SRAM) cell that enhance the read and write margins at a time, though generally with a trade-off between the read and the write margins, are introduced.

Analysis of Random Variations and Variation-Robust Advanced Device Structures

Hyohyun Nam,Gyo Sub Lee,Hyunjae Lee,In Jun Park,Changhwan Shin 대한전자공학회 2014 Journal of semiconductor technology and science Vol.14 No.1

In the past few decades, CMOS logic technologies and devices have been successfully developed with the steady miniaturization of the feature size. At the sub-30-nm CMOS technology nodes, one of the main hurdles for continuously and successfully scaling down CMOS devices is the parametric failure caused by random variations such as line edge roughness (LER), random dopant fluctuation (RDF), and work-function variation (WFV). The characteristics of each random variation source and its effect on advanced device structures such as multigate and ultra-thin-body devices (vs. conventional planar bulk MOSFET) are discussed in detail. Further, suggested are suppression methods for the LER-, RDF-, and WFV-induced threshold voltage (VTH) variations in advanced CMOS logic technologies including the double-patterning and double-etching (2P2E) technique and in advanced device structures including the fully depleted siliconon-insulator (FD-SOI) MOSFET and FinFET/tri-gate MOSFET at the sub-30-nm nodes. The segmentedchannel MOSFET (SegFET) and junctionless transistor (JLT) that can suppress the random variations and the SegFET-/JLT-based static random access memory (SRAM) cell that enhance the read and write margins at a time, though generally with a trade-off between the read and the write margins, are introduced.

NMOS 소자의 Ta-Ti 게이트 전극 특성

강영섭,서현상,노영진,이충근,홍신남 한국항행학회 2003 韓國航行學會論文誌 Vol.7 No.2

본 논문에서는 오래 전부터 NMOS의 게이트 전극으로 사용된 폴리실리콘을 대체할 수 있는 Ta-Ti 합금의 특성에 대해 연구하였다. 실리콘 기판 위에 열적으로 성장된 SiO₂위에 Ta과 Ti의 두 타깃을 사용하여 co-sputterring 방법으로 Ta-Ti 합금을 증착하였다. 각각의 타킷의 100W 의 sputtering power 로 증착하여 시편을 제작하였다. 또한 비교 분석을 위하여 Ta를 100W의 sputtering power로 증착한 시편도 제작하였다. 제작된 Ta-Ti 합금 게이트의 열적/화학적 안정성을 검토하기 위하여 600℃에서 급속열처리를 수행한 결과 소자의 성능 저하는 나타나지 않았다. 또한 전기적 특성 분석 결과 Ta-Ti합금은 NMOS 에 적합한 일합수인 4.13eV를 산출해 낼수 있었고, 면저항 역시 폴리실리콘에 비해 낮은 값을 얻을 수 있었다. In this paper, characteristics of Ta-Ti alloy was studied as a gate electrode for NMOS devices to replace the widely used polysilicon. Ta-Ti alloy was deposited directly on SIO_2 by a co-sputtering method using two of Ta and Ti targets. The sputtering power of each metal target was 100W. To compare with Ta-Ti, Ta deposited with a 100W sputtering power was fabricated as well. In order to investigate the thermal/chemical stability of the Ta-Ti alloy gate, the alloy was annealed at 600℃ with rapid thermal annealer. No appreciable degradation of the device was observed. Also the results of electircal analysis showed that the work function of Ta-Ti metal alloy was about 4.1eV which was suitable for NMOS devices and sheet resistance of alloy was lower than that of polysilicon.

메틸메타크릴레이트와 스티렌의 라디칼 공중합 속도에 관한 연구

설수덕,김남석,나상도,신봉섭 東亞大學校 大學院 1995 大學院論文集 Vol.20 No.-

일부 직업인의 건강증진생활양식에 영향을 미치는 요인 연구

이은경,안병상,유택수,김성천,정재열,박용신,장두섭,송용선,이기남,Lee Eun-Kyoung,An Byung-Sang,Yu Taek-Su,Kim Seoung-Cheon,Jeung Jea-Yeal,Park Young-Shin,Jahng Doo-Sub,Song Yung-Sun,Lee Ki-Nam 대한예방한의학회 2000 대한예방한의학회지 Vol.4 No.2

The current industrial health service is shifting to health improvement business with 1st primary prevention-focused service from secondary and tertiary prevention-focused business, and Oriental medicine can provide such primary prevention-focused service due to the characteristics of its science. In particular, the advanced concept of health improvement can match the science of health care of Oriental medicine. Notably, what is most important in health improvement is our lifestyle, This does not underestimate the socio-environmental factors, which have lessened their importance due to modernism. The approach of Oriental medicine weighs more individuals' lifestyle and health care through self-cultivation. This matches the new model of advanced health business. Oriental medicine is less systemized than Western medicine, but it can provide ample contents that enhance health. If we conceive health-improvement program based on the advantages provided by these two medical systems, this will influence workers to the benefit of their health. Also, health Program needs to define factors that determine individual lives, and to provide information and technologies essential to our lives. The Oriental medicine approach puts more stress on a subject's capabilities than it does on the effect his surrounding environment can have. This needs to be supported theoretically by not only defining the relations between an individual's health state and his lifestyle, but also identifying the degree to which an individual in the industrial work place practices health improvement lifestyle . This is the first step toward initiating health-improvement business . In order to do this, this researcher conducted a survey by taking random samplings from workers, and can draw the following conclusions from it. 1 The sampled group is categorized into', by sender, female 6.6%, and male 93.4%, with males dominant; by marriage status , unmarried 43.9% and married 55.6%, with both similar percentage, and, by age, below 30, 48.4%, between 30 and 39, 27.4%, between 40 and 49, 18.2%, and over 50, 6.0%. The group further is categorized into; by education, middle school or under 1.7%, high school 30.5%, and junior college or higher 65.8% with high school and higher dominant: and by income, below 1.7 million won 24.2%, below 2.4 million won 14.8%, and above 2.4 million 6.3% Still, the group by job is categorized into collegians with 23.9%, office worker with 10.3%, and professionals with 65.8% , and this group does not include workers engaged in production that are needed for this research, but mostly office workers . 2. The subjects selected for this survey show their degree of practicing health-improvement lifestyle at an average of 2.63, health management pattern at 2.64, and health-related awareness at 2.62 The sub-divisions of health-improvement lifestyle show social emotion (2.87), food (2.66). favorite food (2.59), and leisure activities (2.52), in this order for higher points. It further shows health awareness (2.47) and safety awareness (2.40), lower points than those in health management pattern . 3. In the area of using leisure time for health-improvement, males, older people, married, and people with higher income earn higher marks. And, in the area of food management, the older and married earn higher marks . In the area of favorite food management, females, lower-income bracket, and lower-educated show higher degree of practice , while in the area of social emotion management, the older. married, and higher-income bracket show higher marks. In addition, in the area of health awareness, the older, married, and people with higher-income show higher degree of practice. 4. To look at correlation by overall and divisional health-improvement practice degree , this researcher has analyzed the data using Person's correlation coefficient. The lifestyle shows significant correlation with its six sub-divisions, and use of leisure time, food, and health awareness al

Highly Efficient and Selective Formation of Hydrogencarbonate in CO₂ Absorption Process Using Piperidine and Piperazine Derivatives

Shin, Man Sub,Park, Yoon Kook,Nam, Sung Chan,Hwang, Kwang-Jin The Chemical Society of Japan 2012 Chemistry letters Vol.41 No.2

<P>This investigation demonstrated that bicarbonate ions were selectively formed over carbamate in a CO<SUB>2</SUB> absorption process using piperidine and piperazine derivatives based on <SUP>13</SUP>C NMR. Piperidines with methyl or hydroxymethyl substituent at 2 position (PiP-Me and PiP-MeOH) and 2,5-dimethylpiperazine (DM-PiZ) generated the bicarbonate ions as main adducts in reaction with CO<SUB>2</SUB>. The absorptions of CO<SUB>2</SUB> by those aqueous amines (PiP-Me and DM-PiZ) were faster than those of MEA (2-aminoethanol).</P>

ZrO₂ 게이트 절연막 위에 증착된 Mo 게이트 전극의 특성

강영섭,안재홍,김재영,홍신남,Kang, Young-Sub,An, Jea-Hong,Kim, Jae-Young,Hong, Shin-Nam 한국전기전자재료학회 2005 전기전자재료학회논문지 Vol.18 No.2

In this work, MOS capacitors were used to study the electrical properties of Mo gate electrode deposited on ZrO$_2$. The workfunctions of Mo gate extracted from C-V curves were appropriate for PMOS. Thermal stability of Mo metal was investigated by analyzing the variations of workfunction and EOT(effective oxide thickness) after 600, 700, and 800 $^{\circ}C$ RTA(rapid thermal annealing). It was found that Mo gate was stable up to 800 $^{\circ}C$ with underlying ZrO$_2$. The resistivities of Mo were 35$\mu$Ω$.$cm∼ 75$\mu$Ω$.$cm. These values are lower than those of heavily doped polysilicon. Based on these measurements, it can be concluded that Mo metal gate with ZrO$_2$ gate insulator is an excellent gate material for PMOS.

NMOS 소자에 대한 Ru₁Zr₁ 합금 게이트 전극의 특성

이충근,강영섭,홍신남,Lee, Chung-Keun,Kang, Young-Sub,Hong, Shin-Nam 한국전기전자재료학회 2004 전기전자재료학회논문지 Vol.17 No.6

This paper describes the characteristics of Ru-Zr alloy gate electrodes deposited by co-sputtering. The various atomic composition was made possible by controlling sputtering power of Ru and Zr. Thermal stability was examined through 600 and 700 $^{\circ}C$ RTA annealing. Variation of oxide thickness and X-ray diffraction(XRD) pattern after annealing were employed to determine the reaction at interface. Low and relatively stable sheet resistances were observed for Ru-Zr alloy after annealing. Electrical properties of alloy film were measured from MOS capacitor and specific atomic composition of Zr and Ru was found to yield compatible work function for nMOS. Ru-Zr alloy was stable up to $700^{\circ}C$ while maintaining appropriate work function and oxide thickness.

RNA-Seq for Gene Expression Profiling of Human Necrotizing Enterocolitis: a Pilot Study

Jung, Kyuwhan,Koh, InSong,Kim, Jeong-Hyun,Cheong, Hyun Sub,Park, Taejin,Nam, So Hyun,Jung, Soo-Min,Sio, Cherry Ann,Kim, Su Yeong,Jung, Euiseok,Lee, Byoungkook,Kim, Hye-Rim,Shin, Eun,Jung, Sung-Eun,Cho The Korean Academy of Medical Sciences 2017 JOURNAL OF KOREAN MEDICAL SCIENCE Vol.32 No.5

<P>Necrotizing enterocolitis (NEC) characterized by inflammatory intestinal necrosis is a major cause of mortality and morbidity in newborns. Deep RNA sequencing (RNA-Seq) has recently emerged as a powerful technology enabling better quantification of gene expression than microarrays with a lower background signal. A total of 10 transcriptomes from 5 pairs of NEC lesions and adjacent normal tissues obtained from preterm infants with NEC were analyzed. As a result, a total of 65 genes (57 down-regulated and 8 up-regulated) revealed significantly different expression levels in the NEC lesion compared to the adjacent normal region, based on a significance at fold change ≥ 1.5 and <I>P</I> ≤ 0.05. The most significant gene, <I>DPF3</I> (<I>P</I> < 0.001), has recently been reported to have differential expressions in colon segments. Our gene ontology analysis between NEC lesion and adjacent normal tissues showed that down-regulated genes were included in nervous system development with the most significance (<I>P</I> = 9.3 × 10<SUP>−7</SUP>; <I>P<SUB>corr</SUB></I> = 0.0003). In further pathway analysis using Pathway Express based on the Kyoto Encyclopedia of Genes and Genomes (KEGG) database, genes involved in thyroid cancer and axon guidance were predicted to be associated with different expression (<I>P<SUB>corr</SUB></I> = 0.008 and 0.020, respectively). Although further replications using a larger sample size and functional evaluations are needed, our results suggest that altered gene expression and the genes' involved functional pathways and categories may provide insight into NEC development and aid in future research.</P>

G2A Protects Mice against Sepsis by Modulating Kupffer Cell Activation: Cooperativity with Adenosine Receptor 2b

Li, Hong-Mei,Jang, Ji Hye,Jung, Jun-Sub,Shin, Jiseon,Park, Chul O.,Kim, Yeon-Ja,Ahn, Won-Gyun,Nam, Ju-Suk,Hong, Chang-Won,Lee, Jongho,Jung, Yu-Jin,Chen, Jiang-Fan,Ravid, Katya,Lee, H. Thomas,Huh, Won- American Association of Immunologists 2019 Journal of Immunology Vol. No.

<P>G2A is a GPCR abundantly expressed in immune cells. G2A<SUP>−/−</SUP> mice showed higher lethality, higher plasma cytokines, and an impaired bacterial clearance in response to a murine model of sepsis (cecal ligation and puncture), which were blocked by GdCl<SUB>3</SUB>, an inhibitor of Kupffer cells. Anti–IL-10 Ab reversed the impaired bacterial clearance in G2A<SUP>−/−</SUP> mice. Indomethacin effectively blocked both the increased i.p. IL-10 levels and the impaired bacterial clearance, indicating that disturbed PG system is the proximal cause of these phenomena. Stimulation with LPS/C5a induced an increase in <I>Escherichia coli</I> phagocytosis and intracellular cAMP levels in G2A<SUP>+/+</SUP> peritoneal macrophages but not G2A<SUP>−/−</SUP> cells, which showed more PGE<SUB>2</SUB>/nitrite release and intracellular reactive oxygen species levels. Heterologous coexpression of G2A and adenosine receptor type 2b (A2bAR) induced a synergistic increase in cAMP signaling in a ligand-independent manner, with the evidence of physical interaction of G2A with A2bAR. BAY 60-6583, a specific agonist for A2bAR, increased intracellular cAMP levels in Kupffer cells from G2A<SUP>+/+</SUP> but not from G2A<SUP>−/−</SUP> mice. Both G2A and A2bAR were required for antiseptic action of lysophosphatidylcholine. These results show inappropriate activation of G2A<SUP>−/−</SUP> Kupffer cells to septic insults due to an impaired cAMP signaling possibly by lack of interaction with A2bAR.</P>