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강영섭,서현상,노영진,이충근,홍신남 한국항행학회 2003 韓國航行學會論文誌 Vol.7 No.2
본 논문에서는 오래 전부터 NMOS의 게이트 전극으로 사용된 폴리실리콘을 대체할 수 있는 Ta-Ti 합금의 특성에 대해 연구하였다. 실리콘 기판 위에 열적으로 성장된 SiO₂위에 Ta과 Ti의 두 타깃을 사용하여 co-sputterring 방법으로 Ta-Ti 합금을 증착하였다. 각각의 타킷의 100W 의 sputtering power 로 증착하여 시편을 제작하였다. 또한 비교 분석을 위하여 Ta를 100W의 sputtering power로 증착한 시편도 제작하였다. 제작된 Ta-Ti 합금 게이트의 열적/화학적 안정성을 검토하기 위하여 600℃에서 급속열처리를 수행한 결과 소자의 성능 저하는 나타나지 않았다. 또한 전기적 특성 분석 결과 Ta-Ti합금은 NMOS 에 적합한 일합수인 4.13eV를 산출해 낼수 있었고, 면저항 역시 폴리실리콘에 비해 낮은 값을 얻을 수 있었다. In this paper, characteristics of Ta-Ti alloy was studied as a gate electrode for NMOS devices to replace the widely used polysilicon. Ta-Ti alloy was deposited directly on SIO_2 by a co-sputtering method using two of Ta and Ti targets. The sputtering power of each metal target was 100W. To compare with Ta-Ti, Ta deposited with a 100W sputtering power was fabricated as well. In order to investigate the thermal/chemical stability of the Ta-Ti alloy gate, the alloy was annealed at 600℃ with rapid thermal annealer. No appreciable degradation of the device was observed. Also the results of electircal analysis showed that the work function of Ta-Ti metal alloy was about 4.1eV which was suitable for NMOS devices and sheet resistance of alloy was lower than that of polysilicon.
ZrO<sub>2</sub> 게이트 절연막 위에 증착된 Mo 게이트 전극의 특성
강영섭,안재홍,김재영,홍신남,Kang, Young-Sub,An, Jea-Hong,Kim, Jae-Young,Hong, Shin-Nam 한국전기전자재료학회 2005 전기전자재료학회논문지 Vol.18 No.2
In this work, MOS capacitors were used to study the electrical properties of Mo gate electrode deposited on ZrO$_2$. The workfunctions of Mo gate extracted from C-V curves were appropriate for PMOS. Thermal stability of Mo metal was investigated by analyzing the variations of workfunction and EOT(effective oxide thickness) after 600, 700, and 800 $^{\circ}C$ RTA(rapid thermal annealing). It was found that Mo gate was stable up to 800 $^{\circ}C$ with underlying ZrO$_2$. The resistivities of Mo were 35$\mu$Ω$.$cm∼ 75$\mu$Ω$.$cm. These values are lower than those of heavily doped polysilicon. Based on these measurements, it can be concluded that Mo metal gate with ZrO$_2$ gate insulator is an excellent gate material for PMOS.
암세포 Bcl-2 family 유전자 군의 DNA 메틸화 연구
강영섭 ( Young Suep Kang ),이선영 ( Sun Young Lee ),정상근 ( Sang Gun Jung ),한지유 ( Ji You Han ),고정재 ( Jeong Jae Ko ),배지현 ( Jee Hyeon Bae ),나영정 ( Young Junh Na ),이찬 ( Chan Lee ),목정은 ( Jung Un Mock ),김승조 ( Sung 대한산부인과학회 2007 Obstetrics & Gynecology Science Vol.50 No.7
목적: 본 연구는 암세포주와 난소암 조직에서 세포예정사의 핵심 조절 단백질인 Bcl-2 family 유전자의 DNA 메틸화 여부를 암과의 관련성을 밝히는데 그 목적이 있다. 연구 방법: 자궁경부암 세포주인 HeLa, CaSki 그리고 만성골수성 혈액암 세포주인 K562 세포에서 genomic DNA를 추출하여 sodium bisulfite를 통한 cytosine 염기를 uracil로 치환하였다. 치환된 염기서열은 methylation과 unmethylation을 특이적으로 확인할 수 있는 primer를 이용하여 MSP (Methylation Specific PCR)을 수행한 후 암세포에서 Bcl-2 family 유전자의 DNA 메틸화 여부를 판별하였다. 결과: 각각의 세포주에서 antiapoptotic Bcl-2 family 유전자 군인 Mcl-1과 Bcl-2 유전자는 DNA 메틸화가 이루어지지 않은 것으로 관찰되었으며, proapoptotic Bcl-2 family 구성원인 Harakiri 유전자는 DNA 메틸화가 이루어진 것을 확인하였다. 반면, 다른 proapoptotic Bcl-2 family 유전자인 Noxa 유전자는 DNA 메틸화가 이루어지지 않은 것으로 관찰되었다. 또한 난소암 조직에서의 DNA 메틸화 여부를 살펴본 결과 Mcl-1과 Noxa는 세포주에서와 같은 결과를 보였고, Harakiri 유전자의 경우 hypomethylation으로 관찰되었다. 결론: 본 연구는 암세포주와 난소암 조직에서 proapoptotic Bcl-2 family 유전자인 Harakiri와 Noxa의 경우, 유전자 특이적인 DNA의 메틸화가 나타났으며 antiapoptotic 유전자는 DNA의 메틸화가 나타나지 않았다. 이로써 Bcl-2 유전자군과 암세포의 세포사멸을 억제하는 기작을 DNA의 메틸화를 통한 특이 유전자 발현 억제에 의해서 이루어질 수 있다고 사료된다. Objective: Promoter methylation of Bcl-2 family genes in cancer cells were studied to verify possible correlation between DNA methylation pattern of Bcl-2 family members and cancer. Methods: The genomic DNAs were extracted from different cancer cell lines, HeLa, CaSki and K562, and ovarian cancer tissue from patients. The cytosine residues were converted to uracil by sodium bisulfite treatment. MSP (methylation specific PCR) was performed to determine the methylation status of Bcl-2, Mcl-1, Noxa, and Harakiri promoters. Using primers that distinguish methylated DNA from unmethylated DNA after bisulfite modification of DNA, MSP was conducted to observe the methylation pattern of Bcl-2 family genes in different cancer cells. Results: The promoter regions of Bcl-2 family genes including Mcl-1, Bcl-2, and Noxa were not methylated in cancer cells, whereas the proapoptotic Bcl-2 family gene Harakiri was detected as methylated in the cancer cell lines and hypomethylated in the ovarian cancer tissue. Conclusion: The present study demonstrated the differential methylation profiles of Bcl-2 family genes in cancerous cells, which suggests a possible connection between the methylation pattern of some of Bcl-2 family genes and ovarian cancer.
NMOS 소자에 대한 Ru<sub>1</sub>Zr<sub>1</sub> 합금 게이트 전극의 특성
이충근,강영섭,홍신남,Lee, Chung-Keun,Kang, Young-Sub,Hong, Shin-Nam 한국전기전자재료학회 2004 전기전자재료학회논문지 Vol.17 No.6
This paper describes the characteristics of Ru-Zr alloy gate electrodes deposited by co-sputtering. The various atomic composition was made possible by controlling sputtering power of Ru and Zr. Thermal stability was examined through 600 and 700 $^{\circ}C$ RTA annealing. Variation of oxide thickness and X-ray diffraction(XRD) pattern after annealing were employed to determine the reaction at interface. Low and relatively stable sheet resistances were observed for Ru-Zr alloy after annealing. Electrical properties of alloy film were measured from MOS capacitor and specific atomic composition of Zr and Ru was found to yield compatible work function for nMOS. Ru-Zr alloy was stable up to $700^{\circ}C$ while maintaining appropriate work function and oxide thickness.
MOS Characteristics of Ta-Mo Alloy Electrodes on a ZrO2 Gate Dielectric
홍신남,손기민,안재홍,강영섭 한국물리학회 2008 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.53 No.2
Metal-oxide-semiconductor (MOS) capacitors were fabricated to reveal the electrical and the chemical properties of Ta-Mo alloy gate electrodes on ZrO2. The work function of the alloy varied between 4.1 eV and 4.7 eV as the co-sputtering powers of Ta and Mo were changed. Good thermal stability up to 800 ℃ was observed for the alloy with a 90.2 % Ta atomic composition and the extracted work function was 4.1 eV, which is compatible with NMOS applications, but the pure Ta gate electrode exhibited very poor thermal stability; the equivalent oxide thickness (EOT) of the tantalum-gated MOS capacitor decreased drastically after 600 ℃ annealing. The barrier heights between the alloy electrode and the gate dielectric were calculated using a Fowler-Nordheim analysis. Based on the experimental results, the metal alloy with about 90 % Ta and 10 % Mo may be an excellent gate electrode on ZrO2 for NMOS devices.