승온시 Si₂H?가스 주입을 이용한 고상에피택시에 의해 제조된 Si에피택시막에 관한 연구

金東玄,申東勳,金世埈,金亨駿 弘益大學校 科學技術硏究所 1997 科學技術硏究論文集 Vol.8 No.-

In this study, a novel technique to realize a selectively grown Si epitaxy layer onto source/drain regions has been developed. This technique consists of deposition of amorphous Si with oxide-free Si surface, selective solid phase epitaxial(SPE) growth on Si windows. The amorphous Si layer serves as the channeling prevention layer during the ion implantation. Usually, amorphously deposited Si films by CVD are crystallized to poly-Si due to a formation of SiO₂layer at amorphous Si/Si substrate interface. Formation of SiO₂layer on si surface can be effectively prevented by flowing Si₂H?? gas during the heating-up procedure fro amorphous Si depositions. In this way, amorphously deposited Si layer onto (100) Si substrates was grown epitaxially during the post-deposition heat treatments. Employing Si₂H?? flowing and solid phase epitaxial growth, high-quality epitaxial Si layer was obtained at low temperatures below 600℃ without conventional high temperature cleaning procedures.

간경화를 가진 환자의 척추 수술 후 발생한 급성 간부전 : 증례보고 A case report

김형남,최준석,박천희,이철승,김원태 全南大醫大 2001 전남의대학술지 Vol.37 No.4

고상 에피텍시 성장을 이용한 elevated source/drain 공정연구

金湘薰,崔在植,崔圭鎭,金亨駿 弘益大學校 科學基術硏究所 1999 科學技術硏究論文集 Vol.10 No.2

Recently, semiconductor devices require the ultrashallow junctions and low leakage current. Self-implantation to make preamorphization prevents channeling and minimizes junction depth. But in this way, implantation with high energy makes defects like dislocation loop in depletion region and interface between amorphous silicon and silicon wafer. But solid phase epitaxy using low pressure chemical vapor deposition prevents channeling, allows the easy control of junction depth by amorphous layer thickness, and improves the conventional processes. Amorphous silicon films in source and drain by LPCVD are elevated from the Si substrate. This structure is called "elevated source/drain". The elevated source/drain process improves metal contact and simplify the fabrication process. Usually, the amorphously-deposited Si films by chemical vapor deposition are crystallized to polycrystalline films due to a formation of SiO₂layer at the amorphous Si/Si substrates interfaces. Formation of SiO₂layer on Si surface can be effectively prevented by flowing the Si₂H?? gas during the heating-up procedure for amorphous Si depositions. In this way, amorphously deposited Si layer onto (100) Si substrates was grown epitaxially during the post-deposition heat treatments. The suppression of surface SiO₂can be explained in terms of adsorption of SiHx adspecies, instead of oxygen from residual gases in the reactors, to Si surfaces after desorption of hydrogen from H-passivated Si surfaces. Employing Si₂H?? flowing and solid phase epitaxial growth, high-quality epitaxial Si layer was obtained at low temperatures below 500℃ without conventional high temperature cleaning procedures. Amorphous Si films on Si substrate are epitaxially grown and amorphous Si films on SiO₂layer remain as amorphous with proper heat treatments. Uncrystallized amorphous Si films on SiO₂layer can be selectively etched using the HNO₃/HF/HNO₃/CH₃COOH solution with proper mixing ratio and elevated source/drain regions were formed.

커뮤니티 개념을 적용한 도시하천 수변공간 정비방안에 관한 연구

김형태,이윤남,장준호 안양대학교 산업기술연구소 2002 自然科學硏究 Vol.9 No.-

급속한 도시화의 과정에서 기존의 도시하천정비는 공공의 논리로 이수, 치수목적에 큰 비중을 두었다. 그 결과 도시하천의 생태계 파괴는 물론, 획일적인 개발형태로 인하여 경관에 많은 문제점을 지니게 되었고, 특히 대도시 내에서의 하천은 그 경향이 심각하게 나타나게 됨에 따라 도시민에게 외면당하고 있는 실정이다. 따라서 본 연구에서는 이러한 문제점 해결방안으로 커뮤니티 개념을 적용한 접근 방법을 시도함으로써 새로운 문화와 상징을 창출하고 해당지역 주민에게 정비사업에의 참여를 통한 지역애와 지역공동체성을 함양시킬 수 있는 새로운 방안을 모색해보고자 한다. During the rapid urbanizing period, consolidating the urban waterfront system was likely to be regarded to leave the water or to regulate waterfront by the public logic. According to this research as a result, we have a lot of problems not only about the destruction of ecosystem but also about their appearance by the exact same development forms. As the problem is being more serious in the metropolitan areas, the residents don't care any more. So here, we are trying to solve this problem by approaching the concept of the community planning, so that we can creat the new cultural symbol and also we can make the fascinating space that people can feel their place more like home and give them comfortable through citizen participation.

승온시 Si₂H가스 주입을 이용한 저온 Si 에피택시에 관한 연구

金亨駿,申東勳,崔圭鎭,金東玄 弘益大學校 科學技術硏究所 1998 科學技術硏究論文集 Vol.9 No.2

In this study, we studied on the low temperature Si epitaxy growth for Si epitaxial growth temperature below 650。C. Usually, the Si epitaxy films by chemical vapor deposition are crystallized to polycrystalline films due to a formation of SiO₂layer at the epitaxial Si/Si substrates interfaces. Formation of SiO₂layer on Si surface can be effectively prevented by flowing the Si₂H?? gas during the heating-up procedure for Si deposition. In this way, Si epitaxial layer onto (100) Si substrates was grown epitaxial layer during the post-deposition heat treatments. The suppression of surface BIO₂can be explained in terms of adsorption of SiH?? adspecies, instead of oxygen from residual gases in the reactors, to Si surfaces after desorption of hydrogen from H-passivated Si surfaces. Employing Si₂H?? flowing and epitaxial growth, high-quality epitaxial Si layer was the low temperature below 650。C without conventional high temperature cleaning procedures. And the crystallinity of epitaxial layer measured as deposition conditions using ultraviolet reflectance. AS this results, we could be aquaired process temperature region for high-quality low temperature Si epitaxial growth.

일개 제빵회사 근로자의 제빵공 천식 유병률

김정민,권영준,주영수,임형준,이태경,강혜련,백도명 大韓産業醫學會 2008 대한직업환경의학회지 Vol.20 No.3

목적: 일개 제빵회사에서 제빵공 천식 유병률을 조사하여 제빵공 천식으로 인한 국내 질병부담을 파악하는데 기초자료를 제공하고자 하였다. 방법: 일개 제빵회사의 생산관련 근로자 596명에서 수습기간(3개월) 중이거나 참여를 거부한 216명을 제외하고,380명을 연구대상으로 하였다. 밀가루분진 노출형태에 따라 직접노출군과 간접노출군으로 직무 카테고리를 분류하고,설문조사는 ISAAC 설문항목에 직업력 등을 추가한 설문지를 사용하였다. 설문조사에서 천식이나 알레르기병과 관련된 증상이나 병력이 전혀 없는 간접노출군은 임상검사대상에서 제외하였다. 임상검사대상 233명에게 피부단자검사,혈청 특이 IgE 항체검사,산업의학 전문의와의 면담을 시행하였고,면담에서 천식이나 알레르기비염과 관련된 증상이나 병력이 확인된 31명을 연속적 PEFR 측정대상으로 하였다. PEFR 변동률로써 메타콜린 기관지유발검사대상을 선정하였고,메타콜린 기관 지유발검사에서 기관지과민성이 확인된 경우에 특이 기관지유발검사를 시행하였다. 제빵공 천식은 특이 기관지유 발검사에서 천식반응이 확인된 경우로 정의하였다. 결과: 연구대상의 밀가루 민감화율은 21.0%(직접노출군 25.9%,간접노출군 13.3%), 제빵공 천식 유병률은 3.2%(직접노출군 5.1%,간접노출군 1.8%)였다. 직접 노출군이 간접노출군에 비해 밀가루에 민감화될 위험이 높았으며(OR 2.15,95% CI=1.03∼4.51), 제빵공 천식에 이환될 위험은 통계적으로 유의하지 않았다(PR 2.52,95% CI=O.78∼8.18). 밀가루에 민감화된 군이 그렇지 않은 군에 비해 제빵공 천식에 이환될 위험이 매우 높았다(PR 38.63, 95% CI=6.14∼243.22). 결론: 이번 연구결과는 직업적으로 밀가루에 노출되는 국내 근로자에서 제빵공 천식이 적지 않을 것임을 시사하고 있다. 향후 제빵공 천식으로 인한 질병부담을 보다 정확히 파악하기 위해서는 국내에서 연구된 바 없는 밀가루 취급 사업장(제분회사 등)에 대한 연구가 필요하며,근로자의 건강과 사회경제적 위치를 보호하기 위한 체계적인 연구도 요구된다. Objectives: To determine the prevalence of baker's asthma due to flour dust in an industrial bakery in Korea. Methods: Of the 596 active workers, 380 were allocated to a category of either direct exposure (DE) or indirect exposure (IE) to flour dust and completed a modified ISAAC questionnaire. Of the 380 participants, 233 were screened by an occupational physician interview, a skin prick test, and an ELISA for serum-specific IgE antibodies to wheat flour extracts. Selected workers received serial monitoring of peak expiratory flow rate (PEFR), and positive PEFR respondents received a methacholine challenge test. The diagnosis of baker's asthma was confirmed by a specific inhalation challenge with wheat flour extracts. Results: The prevalence of sensitization to wheat flour and baker's asthma was 21.0% (25.9% DE, 13.3% IE) and 3.2% (5.1 % DE, 1.8% IE), respectively. DE had an increased risk of sensitization to wheat flour (OR 2.15, 95% CI = 1.03∼4.51). Sensitization to wheat flour and the prevalence of baker's asthma correlated significantly (PR 38.63, 95% CI = 6.14∼243.22). Conclusions: These findings indicate a considerable prevalence of baker's asthma among flour-exposed workers in Korea. Future studies will be required to survey the situation in flour mill companies and seek ways to protect the health and socioeconomic position of flour industry workers.

GaAs반도체의 오믹접합에 관한 연구

김영중,김형준 弘益大學校 科學技術硏究所 1994 科學技術硏究論文集 Vol.5 No.-

Diamond-Like Carbon 코팅을 이용한 금속 장식 용구의 칼라링 및 디자인연구

변건호,김형준,최형우,권도현 한국공예학회 2001 조형디자인연구 Vol.4 No.2

The usual methods of coloring metal ornaments include surface anodizing, plating and painting. However, the anodizing method can apply to AL materials only and the plating method has been causing a severe environmental problem because of the toxicity of materials used. For these methods, surface deteriorations such as decoloration, scratch and corrosion also occur after long-time use. Therefore, a better surface treatment method is needed. This study was conducted to improve corrosion resistance and wear resistance of metal ornaments, and increase their added value by means of the DLC(Diamond-Like-Carbon) coating method, and to expand the range of its application. This study examined the characteristics of the DLC for coloring metal ornaments and the ornamental design for practical application. Coating metal ornaments could be considered as one of promising fields for application of DLC DLC film is very suitable as a coating material because it is an amorphous carbon material based on covalent bond and therefore has excellent hardness, wear resistance, lubricative property, chemical stability and light transmittance. DLC coating film was formed by the PECVD method using 13.56MHz rf plasma and CH4 gas as a material gas. At this time RF power, working pressure, transmittance according to kind and amount of auxiliary gas, and changes in optical band gap were observed. It was shown that the higher the RF power and working pressure, the lower the optical bang gap. This could be demonstrated by observing the amount of carbon-hydrogen bond by means of FT-IR. It was shown that addition of hydrogen and nitrogen would the optical band gap because they serves to break the carbon-hydrogen bond at the time of vapor deposition. The direction of design was set up in the manner that the DLC coating film could be effectively deposited on the surface of an ornament. Design was based on geometric figures and minimalism with plane elements accentuated. Accentuated, partial coating or simple, whole coating was induced by combining quadrangles, triangles and circles basically.

DNA 수준에서 한국인 HLA-Class Ⅰ 대립유전자형 및 일배체형 분포 : the Molecular Basis

최희백,김형재,김태규,김창규,정태준,한훈 대한조혈모세포이식학회 1997 대한조혈모세포이식학회지 Vol.2 No.1

The products of the human leukocyte antigen (HLA) have been detected by the serological or cellular methods. With the evailability of DNA sequences for alleles of the HLA system, and with the development of molecular biological techniques it has been possible to define the genotypes in HLA genes. And the amplification of DNA using sequence-specific primers has been proved as a reliable and rapid method for typing of HLA class II genes. We studied the distribution of the HLA-A, -B, C genotypes on 114 unrelated individuals by amplification refractory mutation system-polymerase chain reaction (ARMs-PCR). 13, 24 and 14 alleles in HLA-A, B and C genes were detected in normal Korean. The genotypes showing frequencies more than 18 percent were A*02(65.8%), A*24(02, 03) (41.2%), A*33(01, 02) (21.1%), A*11(01, 02) (20.2%), B*15(01, 02, 03, 04, 05)/B52(011, 012) (21.9%), B815(01, 04, 05, 06, 07, 12, 19, 20) (19.3%), B*40(02, 04, 05, 06) (18.4%), Cw*08(01, 02, 03) (28.9%), Cw*0303(27.2%), Cw*0304(26.3%) and Cw*01(01, 02) (24.6%). And most common 2-loci hyplotypes with frequencies larger than 0.04 were A*02-B*15(02, 08, 11, 15) (HF: 0.045), A*24(02, 03)-B*51(01, 02, 03, 04, 05)/*52(011, 012)(HF:0.044), B*51(01, 02, 03, 04, 05)/*52 (011, 012)-Cw14(01, 02) (HF: 0.069). These results suggest that the DNA typing of HLA class I may be an efficient typing method compared with the conventional method.

산재지정병원 이용 후 산재요양환자에 대한 만족도 조사

이화평,임형준,주영수,권영준,강희태,김정민,조성식,이태경,윤종완 대한산업의학회 2007 대한직업환경의학회지 Vol.19 No.3