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An Efficient Machine Learning Model for Clinical Support to Predict Heart Disease
Rao, B.Vara Prasada,Reddy, B.Satyanarayana,Padmaja, I. Naga,Kumar, K. Ashok International Journal of Computer ScienceNetwork S 2022 International journal of computer science and netw Vol.22 No.6
Early detection can help prevent heart disease, which is one of the most common reasons for death. This paper provides a clinical support model for predicting cardiac disease. The model is built using two publicly available data sets. The admissibility and application of the the model are justified by a sequence of tests. Implementation of the model and testing are also discussed
Analysis of electrical characteristics of Er/p-InP Schottky diode at high temperature range
Ashok Kumar, A.,Dasaradha Rao, L.,Rajagopal Reddy, V.,Choi, C.J. Elsevier 2013 Current Applied Physics Vol.13 No.6
We report on the temperature-dependent electrical characteristics of Er/p-InP Schottky barrier diodes. The current-voltage (I-V) and capacitance-voltage (C-V) measurements have been carried out in the temperature range of 300-400 K. Using thermionic emission (TE) theory, the zero-bias barrier height (Φ<SUB>bo</SUB>) and ideality factor (n) are estimated from I-V characteristics. It is observed that there is a decrease in n and an increase in the Φ<SUB>bo</SUB> with an increase in temperature. The barrier height inhomogenity at the metal/semiconductor (MS) interface resulted in Gaussian distribution of Φ<SUB>bo</SUB> and n. The laterally homogeneous Schottky barrier height value of approximately 1.008 eV for the Er/p-InP Schottky barrier diodes is extracted from the linear relationship between the experimental zero-bias barrier heights and ideality factors. The series resistance (R<SUB>s</SUB>) is calculated by Chenug's method and it is found that it increases with the decrease in temperature. The reverse-bias leakage current mechanism of Er/p-InP Schottky diode is investigated. Both Poole-Frenkel and Schottky emissions are described and discussed. Furthermore, capacitance-voltage (C-V) measurements of the Er/p-InP Schottky contacts are also carried out at room temperature in dark at different frequencies of 10, 100 and 1000 kHz. Using Terman's method, the interface state density is calculated for Er/p-InP Schottky diode at different temperatures.
Rao, S. Nagaraja,Kumar, D.V. Ashok,Babu, Ch. Sai The Korean Institute of Electrical Engineers 2018 Journal of Electrical Engineering & Technology Vol.13 No.4
In this paper, configuration of $1-{\phi}$ seven-level boost DC-link cascade based reversing voltage multilevel inverter (BDCLCRV MLI) is proposed for uninterrupted power supply (UPS) applications. It consists of three level boost converter, level generation unit and full bridge circuit for polarity generation. When compared with conventional boost cascaded H-bridge MLI configurations, the proposed system results in reduction of DC sources, reduced power switches and gate drive requirements. Inverter switching is accomplished by providing appropriate switching angles that is generated by any optimization switching angle techniques. Here, round modulation control (RMC) method is taken as the optimization method and switching angles are derived and the same is compared with various switching angles methods i.e., equal-phase (EP) method, and half-equal-phase (HEP) method which results in improved quality of obtained AC power with lowest total harmonic distortion (THD). Reduction in DC sources and switch count makes the system more cost effective. A simulation and prototype model of $1-{\phi}$ seven-level BDCLCRV MLI system is developed and its performance is analyzed for various operating conditions.
Low Pull-in-Voltage RF-MEMS Shunt Switch for 5G Millimeter Wave Applications
P. Ashok Kumar,K. Srinivasa Rao,B. Balaji,M. Aditya,N. P. Maity,Reshmi Maity,Santanu Maity,Ameen El Sinawi,Koushik Guha,K. Girija Sravani 한국전기전자재료학회 2021 Transactions on Electrical and Electronic Material Vol.22 No.6
RF MEMS switches have been employed in many commercial and defense applications due to their high potentiality at microwave and millimeter wave frequencies. In this paper, an RF MEMS shunt switch is designed with perforations and without perforations and simulated using iterative meanders for millimeter wave 5G applications. The proposed iterative meander offers a low spring-constant of 0.68 N/m and reduces the pull-in-voltage upto 1.8 V. The proposed perforated switch design is more reliable which operates with less transition time of 11.2 μs with a quality factor of 1.69. The switch possesses high capacitance ratio of 63. During ON condition, the switch shows low insertion loss of − 0.24 dB at 41 GHz and high isolation of − 46.7 dB at 38 GHz. The performance of the switch is analyzed by simulating it using COMSOL Multiphysics 5.2v (FEM tool). The obtained simulation results shows close approximation with the theoretical results and the switch is efficiently used for 5G millimeter wave applications.
Stress Management and its Impact
Katta Ashok Kumar,Bala Nageswara Rao 동아시아경상학회 2014 The East Asian Journal of Business Economics Vol.2 No.2
T In this paper we will observe the critical impact of the changing lifestyles and advancements in various fields of life. Terms like stress, anxiety, hyper tensions are now a days are being commonly associated with today s living patterns. Stress levels are demonstrating a very positive trend across all the demographic profiles of India. Youth is the soft target of this fatal movement. Indian youth is unable to face the challenges of demanding lives and is falling easy prey to the circumstances. There is a steep rise in youth suicide cases all across India.
Analysis of electrical characteristics of Er/p-InP Schottky diode at high temperature range
A. Ashok Kumar,L. Dasaradha Rao,V. Rajagopal Reddy,최철종 한국물리학회 2013 Current Applied Physics Vol.13 No.6
We report on the temperature-dependent electrical characteristics of Er/p-InP Schottky barrier diodes. The currentevoltage (IeV) and capacitanceevoltage (CeV) measurements have been carried out in the temperature range of 300e400 K. Using thermionic emission (TE) theory, the zero-bias barrier height (Fbo) and ideality factor (n) are estimated from IeV characteristics. It is observed that there is a decrease in n and an increase in the Fbo with an increase in temperature. The barrier height inhomogenity at the metal/semiconductor (MS) interface resulted in Gaussian distribution of Fbo and n. The laterally homogeneous Schottky barrier height value of approximately 1.008 eV for the Er/p-InP Schottky barrier diodes is extracted from the linear relationship between the experimental zero-bias barrier heights and ideality factors. The series resistance (Rs) is calculated by Chenug’s method and it is found that it increases with the decrease in temperature. The reverse-bias leakage current mechanism of Er/p-InP Schottky diode is investigated. Both PooleeFrenkel and Schottky emissions are described and discussed. Furthermore, capacitanceevoltage (C eV) measurements of the Er/p-InP Schottky contacts are also carried out at room temperature in dark at different frequencies of 10, 100 and 1000 kHz. Using Terman’s method, the interface state density is calculated for Er/p-InP Schottky diode at different temperatures.
Design and Analysis of MEMS Electrospray Thruster Device
K. Srinivasa Rao,Shaik Shoukat Vali,P. Ashok Kumar,K. Girija Sravani 한국전기전자재료학회 2021 Transactions on Electrical and Electronic Material Vol.22 No.2
This paper reports on MEMS based Electrospray Thruster for high output velocities, low volume, and high throughput. The best possible dimensions of thruster is fix after doing more experimental analysis i.e. cone half angle, propellant radius, propellant height, and cone height. The maximum output velocity is uptrain, propellant at > 300 μm and propellant radius is changed from 60 to 150 μm. Tip angle with 46°, operating voltage varied between 2.5 and 3.5 kV. The Electrospray Thruster design on COMSOL Multiphysics tool in laminar fl ow environment. Propellant inside emitter carry ionic liquid, almost EMI-BF4 is used as propellant. Output velocity of Electrospray Thruster is observed varying input voltages 2–3.5 kV, accompanying diff erent parameters like half angle and height of cone, propellant radius and height. Optimized outcome will be produced at cone angle of 46.5° with height 130 μm and con bottom radius 125 μm along with propellant radius 125 μm propellant height of 125 μm. The output velocities of thrusters are order of 10 6 .
S. Nagaraja Rao,D. V. Ashok Kumar,Ch. Sai Babu 대한전기학회 2018 Journal of Electrical Engineering & Technology Vol.13 No.4
In this paper, configuration of 1-ø seven-level boost DC-link cascade based reversing voltage multilevel inverter (BDCLCRV MLI) is proposed for uninterrupted power supply (UPS) applications. It consists of three level boost converter, level generation unit and full bridge circuit for polarity generation. When compared with conventional boost cascaded H-bridge MLI configurations, the proposed system results in reduction of DC sources, reduced power switches and gate drive requirements. Inverter switching is accomplished by providing appropriate switching angles that is generated by any optimization switching angle techniques. Here, round modulation control (RMC) method is taken as the optimization method and switching angles are derived and the same is compared with various switching angles methods i.e., equal-phase (EP) method, and half-equal-phase (HEP) method which results in improved quality of obtained AC power with lowest total harmonic distortion (THD). Reduction in DC sources and switch count makes the system more cost effective. A simulation and prototype model of 1-ø seven-level BDCLCRV MLI system is developed and its performance is analyzed for various operating conditions.