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Trichlorosilane 의 환원에 의한 고순도 Silicon 제조
이종화,주웅길,고경신 대한금속재료학회(대한금속학회) 1976 대한금속·재료학회지 Vol.14 No.1
Among the several known processes of semiconductor-grade silicon production, the hydrogen reduction of trichlosilane (TCS) is found to be the most convenient and economical method. In this study of high purity silicon production, the open tube flow process is used to reduce TCS with hydrogen. 99.9% pure TCS, manufactured by Ventron, is distilled for the starting material in the reduction. The distilled TCS is vaporized by bubbling at 0℃ with small quantity of hydrogen in a quartz tube. The resultant yield is compared with the theoretical one calculated thermodynamically. The yield of silicon is 60-70% at the optimum condition of 1100℃ reaction temperature and 60-100 mole ratio of hydrogen to TCS. Surface of the deposited silicon, a polycrystalline dense mass of lustrous appearance, is treated with hydrofluoric acid. By the emission spectroscopy the purity of silicon product is determined to be higher than 99.999%.
Periodic Lateralized Epileptilform Discharges의 임상적 의의와 뇌영상검사와의 상관성에 관한 연구
이종화,박은영,김남수,설인준 대한소아청소년과학회 2000 Clinical and Experimental Pediatrics (CEP) Vol.43 No.3
목 적 : Periodic lateralized epileptiform discharges (PLEDs)는 주기적인 혹은 반주기적인 형태로 나타나는 편측 또는 국소성의 중등도나 고전위의 극서파복합으로 1964년 Chatrian 등에 의해 처음 기술되었다. 이에 저자들은 소아에서 PLEDs가 가지는 임상적 의의와 뇌영상검사와의 상관성을 알아보기 위해 본 연구를 시행하였다.방 법 : 한양대학교병원 소아과에 입원하여 시행한 뇌파검사상 PLEDs를 보인 환아들중 후향적 연구가 가능하였던 2일에서 14세까지의 환아 20명(남아 10명, 여아 10명)을 대상으로 내원시 주소, 의식상태, 경련의 과거력, 초기진단, 뇌파검사상 PLEDs의 위치, 뇌영상검사 소견과의 상관성, 최종 진단 및 후유증에 대해 후향적 연구를 시행하였다. Purpose : Periodic lateralized epileptiform discharges(PLEDs), initially described by Chatrian et al in 1964, are an EEG phenomenon characterized by lateralized or focal spike-and-wave complexes with moderate to high voltage which occur in a periodic or semiperiodic pattern. This study was performed to assess the clinical significance of PLEDs and its relation to an imaging study of the brain. Methods : Twenty children(10 males and 10 females), from 2 days to 14 years of age, who had been hospitalized at Hanyang University Hospital were studied retrospectively. Their medical records, EEG results and brain imaging study were reviewed. Results : Of the 20 patients studied, 15 patients showed unilateral PLEDs and 5 had bilateral PLEDs in EEG. Brain imaging studies were done for 18 of the patients, revealing abnormalities in 15 patients in this order of frequency : intracranial hemorrhage, diffuse cerebral atrophy, leukomalacia, cerebral infarctions, cerebral edema and hydrocephalus. PLED sites were not significantly correlated with the results of the imaging study. Finally, 3 patients died and 17 patients survived, and among the surviving 17 patients, 5 had recurrent seizures, 1 had recurrent seizures with mental regression, 3 had neurologic sequelae without seizures and 8 had no neurologic sequelae. Conclusion : We conclude that children who show PLEDs in EEG are more commonly associated with acute cerebral lesions and there is a high incidence of subsequent seizures and/or other neurological sequelae in surviving children with PLEDs.
이종화,신윤권 대한전자공학회 1998 電子工學會論文誌, D Vol.d35 No.4
A program was developed to analyze the electrical characteristics and harmonic distrotion in a two-dimensional silicon BJT. The finite difference equations of the small signal and its second and thired harmonics for basic semiconductor equations are formulated treating the nonlinearity and time dependence with Volterra series and Taylor series. The soluations for three sets of simultaneous equations were obtained sequantially by a decoupled iteration method and each set was solved by a modified Stone's algorithm. Distortion magins and ac parameters such as input impedance and current gains are calculated with frequency and load resistance as parameters. The distortion margin vs. load resistancecurves show cancellation minima when the pahse of output voltage shifts. It is shown that the distortionof small signal characteristics can be reduced by reducing the base width, increasing the emitter stripe length and reducing the collector epitaxial layer doping concentration in the silicon BJT structure. The simulation program called TRADAP can be used for the design and optimization of transistors and circuits as well as for the calculation of small signal and distortion solutions.