과잉농산물의 이론적 고찰

이종훈 中央大學校經營大學 1959 經營論集 Vol.10 No.-

Dependence of the Diode Characteristics of n-ZnO/p-Si (111) on the Si Substrate Doping

이종훈,J. Y. Lee,J. J. Kim,김홍승,장낙원,W. J. Lee,조채용 한국물리학회 2010 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.56 No.1

We report on the dependence of the diode characteristics of n-ZnO on p-type Si (111) on the dopant concentration in the Si (111) substrate. Silicon substrates were used with a high resistivity (p) (~1 −Ω 20·cm) and a low resistivity (p+) ~0.004 − 0.0055 Ω·cm). Zinc-oxide films were deposited using a radio-frequency sputtering system on the p and p+-Si (111) substrates at room temperature. The films were subsequently annealed at 800 ℃ in air and in N2 in a horizontal thermal furnace to change the electron carrier concentration. By investigating the current and the voltage characteristics of the diodes, we discovered that the diode characteristics depended on the carrier concentration. We discuss the relationship between the carrier concentration and the emission properties of n-ZnO/p-Si diodes. The devices exhibited excellent rectification behavior and diode characteristics, having a turn-on voltage of about 2.3 − 2.7 V and a series resistance between 215 and 330 Ω . The diode characteristics were modified by thermal annealing in an ambient, and n-ZnO/p+-Si (111) heterojunction diodes emitted yellowish light at voltages over 10 V.

Diode-pumped Nd:YAG Rod Laser with Single-side Pumping Geometry

이종훈,김영중,이강인,이재철,조준용,전용근 한국물리학회 2010 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.57 No.21

A pumping chamber for a diode-pumped Nd:YAG rod laser was developed. The pumping beam from a linear diode laser was incident on the rod from a single side. A planar-concave window was installed in front of the diode laser to expand the divergence angle of the emitted beam. The Nd:YAG rod was cooled by using a circulating coolant that flowed through the cooling tube. Due to the planar-concave window, even with a single-side pumping geometry, the uniformity of the pump beam’s distribution in the Nd:YAG rod was improved.

후속 열처리를 통한 n-ZnO/p-Si(111) 이종 접합 구조 다이오드 특성 연구

이종훈,김홍승,김준제,오현성,이주영,장낙원 한국물리학회 2008 새물리 Vol.56 No.3

Zinc-oxide films were deposited on p-type Si (111) substrates by using a radio-frequency (RF) sputtering system at room temperature and were annealed at 800 $^\circ$C in N$_{2}$ and an air ambient for 1 hr. An n-ZnO/p-Si heterojunction diode was fabricated by using a photolithograph method. The effects of the annealing ambient on the electrical and the diode characteristics were investigated by using Hall measurements and current - voltage measurements (HP 4145). In addition, the variation of the light emission with the applied voltage was examined by using a laser diode tester. The electrical characteristics were definitely affected by the annealing ambient, and the n-ZnO/p-Si diodes annealed in N$_{2}$ exhibited yellow light at 13-15 V. p형 Si(111) 기판 위에 RF-스퍼터링 방법으로 ZnO 박막을 상온에서 증착 한 후 열산화로 장비를 이용하여 대기 분위기와 질소 분위기에서 각각 800 $^\circ$C의 온도로 열처리를 하였다. 열처리된 ZnO 박막은 포토리소그래피 공정을 통하여 n-ZnO/p-Si(111) 이종 접합 구조 다이오드로 제작 하였다. 열처리 분위기에 따른 전기적 특성 및 다이오드의 특성을 알아 보기 위하여 홀 측정과 HP (4145B) 계측기를 이용하여 I-V 측정을 하였다. 또한 빛 방출 검출기를 이용하여 전압인가시에 빛 방출 여부를 조사 하였다. 열처리된 ZnO 박막은 열처리 분위기에 따라 다른 전기적 특성이 보였으며, n-ZnO/p-Si(111) 이종 접합 구조 다이오드는 약 13 $\sim$ 15 V 전압 인가 시 약한 황색 빛을 방출 하였다.

경사진 처프된 광섬유격자쌍에 기반을 둔 투과형 분산보상기

이종훈 대한전자공학회 2007 電子工學會論文誌-SD (Semiconductor and devices) Vol.44 No.4

This paper presents a transmissive dispersion compensator based on tilted chirped fiber Bragg grating pairs which happen mode coupling between core mode and cladding mode. And, as a result of simulation, the phase matching condition and optimum tilted angle to maximize the mode-coupling in the dispersion compensator are shown and the dispersion slope and bandwidth in the proposed dispersion compensator is respectively 3,068ps/nm and 0.45nm. 본 논문에서는 서로 반대방향으로 진행하는 코어모드와 클래딩모드사이에서 모드결합이 일어나는 경사진 선형처프된 광섬유격자쌍을 이용한 새로운 투과형 분산보상기을 제안하였다. 제안된 투과형 분산보상기에서 모드결합이 최대로 일어나기 위한 위상정합조건과 최적의 경사각을 제시하였으며, 시뮬레이션을 통해서 제안된 투과형 분산보상기의 분산기울기와 분산보상 가능한 대역폭은 각각 3,068ps/nm와 0.45nm이고, 투과형 분산보상기로 동작함을 보여주었다.

토양과 공기 중 석면함량의 상관분석을 위한 현장시험장치 개발 및 적용

이종훈,김선준,박성숙,오미혜 한국자원공학회 2013 한국자원공학회지 Vol.50 No.6

The objective of this study is to analyze the correlation of asbestos contents in soil with in air using field trial device in field scale experiment. Various wind velocities, 8 m/s, 11 m/s, 15 m/s and 18 m/s, respectively, were applied to evaluate releasable characteristics of the field trial device. Collected soil samples were analyzed by polarized light microscopy and SEM-EDS. Each air sample was examined by phase contrast microscopy. As a result, the field trial device was operable and its use was with ease. The correlation of asbestos contents in air with wind velocities represented positive, while the correlation of soil humidity with in air showed negative. In the case of 3∼6% asbestos contents in soil, it exceeded the acceptable risk range for exposure depending on soil humidity and wind velocity. It is suggested that remediation priority should be given to the site of >3% asbestos contents in soil. 본 연구는 현장규모에서 자체 제작된 현장시험장치를 이용하여 토양과 공기 중 석면함량의 상관관계를 분석하고자 하였다. 현장에서 8 m/s, 11 m/s, 15 m/s 및 18 m/s의 다양한 풍속에 의한 석면의 비산 정도를 측정하였다. 토양시료는 편광현미경법과 주사전자현미경법 및 X-선분광분석을 하였으며, 대기 시료는 위상차현미경법을 이용하였다. 실험결과, 현장시험장치의 작동성 및 편의성이 입증되었으며, 풍속이 증가할수록 비산되는 공기 중 석면 농도가 증가하는 뚜렷한 양의 상관관계가 나타난 반면, 토양 습도가 증가할수록 비산되는 공기 중 석면농도는 감소하는 음의 상관관계가 나타났다. 특히 토양의 석면함량이 3∼6%인 경우, 토양습도와 풍속의 조건에 따라 실내 공기질 권고 기준을 초과하는 경우가 나타났다. 따라서, 토양 내 석면의 함량이 약 3% 이상인 곳을 우선적으로 복원해야 할 것으로 판단된다.

목정맥경유간속문맥전신순환연결술 후 이상좌위정맥에 의한 위정맥류 재출혈: 증례 보고

이종훈,김영환,강웅래,이영환 대한영상의학회 2014 대한영상의학회지 Vol.70 No.3

The aberrant left gastric vein can be a rare cause of gastric variceal bleeding in portal hypertensive patients. Careful examination of vascular anatomy on CT scan and simultaneous embolization of the aberrant left gastric vein during the tranjugular intrahepatic portosystemic shunt are necessary to prevent gastric variceal rebleeding. Herein, we report a case of gastric variceal rebleeding by the aberrant left gastric vein after transjugular intrahepatic portosystemic shunt, which was retrospectively diagnosed by CT scan and portogram, and successfully treated by coil embolization. 문맥압 고혈압 환자의 위정맥류 출혈에서 이상좌위정맥이 매우 드물게 원인이 될 수 있으므로 목정맥경유간속문맥전신순환연결술 시에 전산화단층촬영을 통해 혈관을 주의 깊게 관찰하여 이상좌위정맥 색전술을 동시에 시행하여야 위정맥류의 재출혈을 예방할 수 있다. 저자들은 목정맥경유간속문맥전신순환연결술 후 위정맥류 재출혈을 보인 환자에서 전산화단층촬영과 문맥조영술을 역행적으로 분석하여 이상좌위정맥에 의한 재출혈을 진단하였으며 코일을 이용한 색전술을 통해 성공적으로 재출혈을 치료한 1예를 경험하였기에 이를 보고하고자 한다.

Microstructural properties of GaN grown on a Si(110) substrate by gassource molecular beam epitaxy: Dependence on the ammonia flux

이종훈,류현,안상중,노영균,오재응,김영헌 한국물리학회 2015 Current Applied Physics Vol.15 No.3

The microstructural properties of a GaN thin film grown on a Si(110) substrate under various ammonia (NH3)-flux conditions were observed to study growth mode and defect evolution. The surface flatness of GaN thin films was improved with the increase of the NH3 flux while the thickness was decreased by increasing the NH3 flux. In addition, the crystalline quality of the GaN film grown under the lower NH3 flux (100 sccm) was better than that of the film under the higher NH3 flux (400 sccm). The different dislocation behaviors depending on NH3 fluxes were observed; the low density of dislocations was measured and most of dislocations penetrating the thin film was mixed- and edge-type dislocations when GaN was grown under the low NH3 flux condition while the high density of dislocation and many mixed- and screw-type dislocations penetrating the film were observed in the GaN film grown under the high NH3 flux. These phenomena are demonstrated by using a kinetic model related to the role of NH3.

Characterization of magnesium oxide gate insulators grown using RF sputtering for ZnO thin-film transistors

이종훈,김홍승,김상현,장낙원,윤영 한국물리학회 2014 Current Applied Physics Vol.14 No.5

A ZnO thin-film transistor (TFT) with an MgO insulator was fabricated on a silicon (100) substrate using a radiofrequency magnetron sputtering system. The MgO insulator was deposited using the same deposition system; the total pressure during the deposition process was maintained at 5 mTorr, and the oxygen percentage of O2/(Ar þ O2) was set at 30%, 50%, or 70%. The process temperature was maintained at below 300 C. The dielectric constant of the MgO thin layer was approximately 11.35 with an oxygen percentage of 70%. This ZnO TFT displayed enhanced transistor properties, with a field-effect mobility of 0.0235 cm2 V1 s1, an ION/IOFF ratio of w105, and an SS value of 1.18 V decade1; these properties were superior to those measured for the MgO insulators synthesized using oxygen percentages of 30% and 50%.

A study of electrical enhancement of polycrystalline MgZnO/ZnO bilayer thin film transistors dependence on the thickness of ZnO layer

이종훈,장낙원,윤영,김창연,이지현,김진규,김홍승 한국물리학회 2015 Current Applied Physics Vol.15 No.9

the MgZnO/ZnO bi-layer TFTs were fabricated on the thermally oxidized silicon substrate. The performances with varying the thickness of ZnO layer were investigated. In this result, the MgZnO/ZnO bi-layer TFTs which the content of Mg is about 2.5 at % have shown the enhancement characteristics of high mobility (6.77-7.56 cm2 V-1 s-1) and low sub-threshold swing (0.57-0.69 V decade-1) compare of the ZnO single layer TFT (μFE = 5.38 cm2 V-1 s-1; S.S. = 0.86 V decade-1). Moreover, in the results of the positive bias stress, the ΔVon shift (4.8 V) of MgZnO/ZnO bi-layer is the 2 V lower than ZnO single layer TFT (ΔVon = 6.1 V). It reveals that the stability of the MgZnO/ZnO bi-layer TFT enhanced compared to that of the ZnO single layer TFT.