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초고진공 전자 사이클로트론 화학 기상 증착 장치에 의한 저온 실리콘 에피 성장에 기판 DC 바이어스가 미치는 영향
태흥식(Heung-Sik Tae),황석희(Seok-Hee Hwang),박상준(Sang-June Park),윤의준(Euijoon Joon),황기웅(Ki-Woong Whang),송세안(Se Ahn Song) 한국진공학회(ASCT) 1993 Applied Science and Convergence Technology Vol.2 No.4
Langmuir probe를 사용하여 UHV-ECRCVD 장치에서 기판에 가해진 DC 바이어스에 따른 플라즈마내의 공간적 전위 분포를 측정하였다. 양의 바이어스를 기판에 가하는 경우 플라즈마내의 공간적 전위 분포는 B-field를 따라 cavity로부터 기판으로 down-stream되는 이온의 flux 및 에너지를 감소시키는 오르막의 전위 분포를 갖게 되며 음의 바이어스를 가하는 경우는 down-stream되는 이온의 flux 및 에너지를 증가시키는 내리막의 전위 분포를 갖게 된다. DC 바이어스가 저온 실리콘 에피탁시(560℃ 이하)에 미치는 영향을 in situ reflection high energy electron diffraction(RHEED), cross-section transmission electron microscopy(XTEM), plan-view TEM 및 high resolution TEM(HRTEM)으로 고찰하였다. 음의 바이어스를 가한 기판에는 다결정 실리콘이 성장되고 양의 바이어스를 가한 기판에는 단결정 실리콘이 성장되며 다결정 실리콘의 성장 속도보다 단결정 실리콘의 성장속도가 낮은 것으로 관찰되었다. 플라즈마 증착 중 DC 바이어스에 의한 이온 에너지의 조절은 UHV-ECRCVD에 의한 저온 실리콘 에피탁시에 있어서 중요한 역할을 한다. The spatial potential distribution of electron cyclotron resonance plasma is measured as a function of the substrate DC bias by Langmuir probe method. It is observed that the substrate DC bias changes the slope of the plasma potential near the substrate, resulting in changes in flux and energy of the impinging ions across plasma/substrate boundary along the magnetic field. The effect of the substrate DC bias on the low-temperature silicon homoepitaxy (below 560℃) is examined by in situ reflection high energy electron diffraction (RHEED), cross-section transmission electron microscopy (XTEM), plan-view TEM and high resolution transmission electron microscopy (HRTEM). While the polycrystalline silicon layers are grown with negative substrate biases, the single crystalline silicon layers are grown with positive subatrate biases. As the substrate bias changes from negative to positive values, the growth rate decreases. It is concluded that the control of the ion energy during plasma deposition is very important in silicon epitaxy at low temperatures below 560℃ by UHV-ECRCVD.
Control of Initial Wall Charges for Multi-Luminance of AC-Plasma Display Panel
조병권,태흥식,진성일 한국물리학회 2004 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.44 No.52
A new driving waveform is proposed to control the initial wall charges for multi-luminance duringthe reset-period. The luminance levels are measured based on the variation in the initial wall chargeunder a constant sustain pulse condition in an AC Plasma Display Panel cell. To control the initialwall charges, We applied an auxiliary address pulse during wall charge generation and redistributionparts in the reset-period. As a result, we observed that the luminance levels could be varied underthe same sustain pulse conditions within a luminance level ratio of one or two in the case of dierentinitial wall charge conditions. A new driving waveform is proposed to control the initial wall charges for multi-luminance during the reset-period. The luminance levels are measured based on the variation in the initial wall charge under a constant sustain pulse condition in an AC Plasma Display Panel cell. To control the initial wall charges, We applied an auxiliary address pulse during wall charge generation and redistribution parts in the reset-period. As a result, we observed that the luminance levels could be varied under the same sustain pulse conditions within a luminance level ratio of one or two in the case of dierent initial wall charge conditions.
Reduction of Temporal Image Sticking in AC Plasma Display Panels through the Use of High He Contents
박춘상,태흥식,Sun Ho Kim,김재현 한국정보디스플레이학회 2009 Journal of information display Vol.10 No.4
The temporal dark- and bright-image sticking phenomena were examined relative to the He contents under 11% Xe content in the 50-in HD and FHD AC-PDPs with a ternary gas mixture (Xe-He-Ne). To compare the temporal dark- and bright-image sticking phenomena under various He contents, the differences in the disappearing time, display luminance, perceived luminance, infrared emission, color coordinate, color temperature, and discharge current before and after discharge were measured under 0, 35, 50, and 70% He contents. It was found that temporal dark- and bright-image sticking were reduced in proportion to the increase in He %. Thus, a high He content contributes to the reduction of temporal dark- and bright-image sticking.
평판 유도 결합형 $CH_4/H_2/Ar$ 플라즈마를 이용한 GaN 건식 식각에서 공정변수가 저항성 접촉 형성에 미치는 영향
김문영,태흥식,이호준,이용현,이정희,백영식,Kim, Mun-Yeong,Tae, Heung-Sik,Lee, Ho-Jun,Lee, Yong-Hyeon,Lee, Jeong-Hui,Baek, Yeong-Sik 대한전기학회 2000 전기학회논문지C Vol.54 No.12
We report the effects of etch process parameters on the ohmic contact formation in the plasma etching of GaN. Planar inductively coupled plasma system with $CH_4/H_2/Ar$gas chemistry has been used as etch reactor. The contact resistance and the specific contact resistance have been investigated using transfer length method as a function of RF bias power and %Ar gas concentration in total flow rate. AES(Auger electron spectroscopy) analysis revealed that the etched GaN has nonstoichiometric Ga rich surface and was contaminated by carbon and oxygen. Especially large amount of carbon was detected at the sample etched for high bias power (or voltage) condition, where severe degradation of contact resistance was occurred. We achieved the low ohmic contact of $2.4{\times}10^{-3} {\Omega}cm^2$ specific contact resistance at the input power 400 W, RF bias power 150 W, and working pressure 10mTorr with 10 sccm $CH_4$, 15 sccm H2, 5 sccm Ar gas composition.
GaAs 기판위에 성장된 단결정 AlAs 층의 선택적 산화 및 XPS(X-ray photonelectron spectroscopy) 분석
이용수,태흥식,이석헌,이용현 한국센서학회 1996 센서학회지 Vol.5 No.5
n^+형 GaAs 기판위에 MBE로 1 ㎛ 두께의 GaAs층과 AlAs층 및 GaAs cap 단결정층을 차례로 성장시켰다. AlAs/GaAs epi층을 400℃에서 각각 2시간 및 3시간동안 N^2로 bubbled된 H_2O 水蒸氣(95℃)에서 산화시켰다. 산화시간에 따른 산화막의 XPS 분석결과, 작은 양의 As_2O_3 및 AlAs 그리고 원소형 As들이 2시간동안 산화된 시편에서 발견되었다. 그러나 3시간동안 산화시킨 후에는, 2시간동안 산화시켰을 때 산화막내에 존재하던 소량의 As 산화물과 As 원자들은 발견되지 않았다. 따라서 As-grown된 AlAs/GaAs epi층은 3시간동안 400℃의 산화온도에서 선택적으로 Al_2O_3/GaAs으로 변화되었다. 그러므로 산화온도 및 산화시간은 AlAs/GaAs 계면에서 결함이 없는 표면을 형성하고 기판쪽으로 산화가 진행되는 것을 멈추기 위해서는 매우 결정적으로 작용하는 것으로 조사되었다. A 1 ㎛ thick n-type GaAs layer with Si doping density of 1*10^17/㎤ and a 500Å thick undoped single crystalline AlAs layer were subsequently grown by molecular beam epitaxy on the n^+ GaAs substrate. The AlAs/GaAs layer was oxidized in N_2 bubbled H_2O vapor(95℃) ambient at 400℃ for 2 and 3 hours. From the result of XPS analysis, small amounts of As_2O_3, AlAs, and elemental As were found in the samples oxidized up to 2 hours. After 3 hours oxidation, however, various oxides related to As were dissolved and As atoms were diffused 3 hours the oxide surface. The as-grown AlAs/GaAs layer was selectively converted to Al_2O_3/GaAs at the oxidation temperature 400℃ for 3 hours. The oxidation temperature and time is very critical to stop the oxidation at the AlAs/GaAs interface and to form a defect-free surface layer.