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연관 분류 마이닝 기법을 활용한 지식기반 신체활동 평가 모델
손창식,최락현,강원석,Son, Chang-Sik,Choi, Rock-Hyun,Kang, Won-Seok 대한임베디드공학회 2018 대한임베디드공학회논문지 Vol.13 No.4
Recently, as interest of wearable devices has increased, commercially available smart wristbands and applications have been used as a tool for personal healthy management. However most previous studies have focused on evaluating the accuracy and reliability of the technical problems of wearable devices, especially step counts, walking distance, and energy consumption measured from the smart wristbands. In this study, we propose a physical activity evaluation model using classification rules, induced from the associative classification mining approach. These rules associated with five physical activities were generated by considering activities and walking times in target heart rate zones such as 'Out-of Zone', 'Fat Burn Zone', 'Cardio Zone', and 'Peak Zone'. In the experiment, we evaluated the prediction power of classification rules and verified its effectiveness by comparing classification accuracies between the proposed model and support vector machine.
A Nutrition Evaluation System Based on Hierarchical Fuzzy Approach
손창식,정구보 한국지능시스템학회 2008 INTERNATIONAL JOURNAL of FUZZY LOGIC and INTELLIGE Vol.8 No.2
In this paper, we propose a hierarchical fuzzy based nutrition evaluation system that can analyze the individuals' nutrition status through the inference results generated by each layer. Moreover, a method to minimize the uncertainty of inference in the evaluated nutrition status is discussed. To show the effect of the uncertainty in fuzzy inference, we compared the results of nutrition evaluation with/without the certainty factor of rules on 132 people over the age of 65. From the experimental results, we can see that the evaluation method with the modified certainty factor provides better reliability than that of the general evaluation method without the certainty factor.
Deposition-Temperature Dependence of ZnO/Si Grown by Pulsed Laser Deposition
손창식,김영환,Homero Castaneda LOPEZ,최인훈,Ki Hyun YOON,Sang-Mun KIM,김성일,Yong Tae KIM 한국물리학회 2004 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.45 No.3
We have investigated structural and optical properties of ZnO lms deposited on (100) Si substrates at various deposition temperatures by pulsed laser deposition. All the ZnO lms show columnar structure due to the growth behavior of ZnO; the (0001) plane has the fastest growth rate, but on increasing the deposition temperature the lm texture varies from c-axis orientation normal to substrate surface to random orientation. This tendency can be explained by the negative activation energy evaluated from growth rate as a function of inverse deposition temperature, which implies that ZnO lms are grown in a surface-kinetics-limited regime. FWHM of the UV-emission peak does not change at various deposition temperatures, and its mean value is about 115 meV. In contrast to FWHM, the intensity of UV emission drastically increases with increasing deposition temperature, due to the reduction of grain-boundary recombination effect.
Red Emission from Eu-Implanted GaN
손창식,김성일,Akihiro Wakahara,Hisao Tanoue,최인훈,Mustuo Ogura,Yong Tae Kim,김영환 한국물리학회 2004 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.45 No.3
Eu ions were implanted into GaN epilayers on sapphire substrates. Sharp visible red emission lines due to inner 4f shell transitions for Eu3+ can be observed from the photoluminescence of Eu-implanted GaN. The 5D0 !7F2 transition produces the strongest red emission line. Minor lines are observed in the given spectral range. The lines at 546, 603, 624, and 667 nm are assigned to 5D1 !7F1 and 5D0 !7F1;2;3 transitions, respectively. These emission lines are little changed with varying temperature. Eu-implanted GaN can be a suitable material for application in red emission devices.
단일 공정에 의한 고효율 단일모드 반도체 레이저 구조 제작을 위한 고밀도 양자 나노구조 형성
손창식,백종협,김성일,박용주,김용태,최훈상,최인훈,Son, Chang-Sik,Baek, Jong-Hyeob,Kim, Seong-Il,Park, Young-Ju,Kim, Yong-Tae,Choi, Hoon-Sang,Choi, In-Hoon 한국재료학회 2003 한국재료학회지 Vol.13 No.8
We have developed a new way of the constant growth technique to maintain a grating height of originally-etched V-groove of submicron gratings up to 1.5 $\mu\textrm{m}$ thickness by a low pressure metalorganic chemical vapor deposition. The constant growth technique is well performed on two kinds of submicron gratings that made by holography and electron (e)-beam lithography GaAs buffer layer grown on thermally deformed submicron gratings has an important role in recovering the deformed grating profile from sinusoidal to V-shaped by reducing mass transport effects. The thermal deformation effect on submicron gratings made by e-beam lithography is less than that on submicron gratings made by holography. The constant growth technique is an important step to realize complex optoelectronic devices such as one-step grown distributed feedback lasers and two-dimensional photonic crystals.
손창식,최인훈,박용주,Son, Chang-Sik,Choi, In-Hoon,Park, Young-Ju 한국재료학회 2003 한국재료학회지 Vol.13 No.11
One-dimensional array of InAs quantum dots (QDs) have been grown on V-grooved GaAs substrates by low-pressure metalorganic chemical vapor deposition. Atomic force microscope images show that InAs QDs are aligned in one-dimensional rows along the [011]oriented bottom of V-grooves and no QDs are formed on the sidewalls and the surface of mesa top. Capability to grow one-dimensional InAs QDs array would feasible for the single electron tunneling devices and other novel quantum-confined devices.
손창식,Son, Chang-Sik 한국재료학회 2003 한국재료학회지 Vol.13 No.11
Heavily $p^{ +}$-typed ($10^{20}$ $cm^{-3}$ ) GaAs epilayers have been grown on high-index GaAs substrates with various crystallographic orientations from (100) to (111)A by a low-pressure metalorganic chemical vapor deposition. Carbon (C) tetrabromide (CBr$_4$) was used as a C source. At moderate growth temperatures and high V/III ratios, the hole concentration of C-doped GaAs epilayers shows the crystallographic orientation dependence. The bonding strength of As sites on a growing surface plays an important role in the C incorporation into the high-index GaAs substrates.