매립형 InGaAsP/InP 레이저 다이오드 제작을 위한 질량 이동 현상에 관한 연구

최인훈,이종민,신동석,Choi, In-Hoon,Lee, Jong-Min,Sin, Dong-Suk,Singer, K.E. 한국재료학회 1998 한국재료학회지 Vol.8 No.5

매립형 InGaAnP/InP 레이저 다이오드 제작을 위한 질량 이동 현상의 최적화에 대한 연구를 수행하였다. Double heterostructure 레이저 다이오드 구조의 1차 성장은 액상 에피 성장 장치를 이용하였으며, 메사 에칭하였다. 활성층을 [110] 방향으로 선택적으로 에칭 한 후, 액상 에피 성장 장치를 이용하여 질량 이동 현상을 발생시켜 매립형 구조를 형성시켰다. 질량 이동 현상의 임계온도는 40분간 유지시켰을 때 $670^{\circ}C$로 나타났으며 재현성 있게 질량 이동 현상이 발생하였다. 질량 이동 현상에 의해 성장된 층의 폭은 온도증가에 따라 약간 증가하였다. The conditions for optimizing mass transport for making buried heterostructure (BH) InGaAsP/lnP lasers are discussed. The double heterostructure InGaAsP/lnP laser structures were grown by Liquid Phase Epitaxy (LPE) and etched into mesas. The active layer was selectively etched along [llO] and the mass transport was carried out in the LPE reactor to cover the sides of the active layer and form a BH structure. The threshold temperature for the appreciable mass transport is measured to be 670$670^{\circ}C$ when the holding time is set to 40 min. The width of the region re¬filled by mass transport is observed to increase as the temperature increases.

V 홈 바닥에 형성된 일차원 InAs 양자점

손창식,최인훈,박용주,Son, Chang-Sik,Choi, In-Hoon,Park, Young-Ju 한국재료학회 2003 한국재료학회지 Vol.13 No.11

One-dimensional array of InAs quantum dots (QDs) have been grown on V-grooved GaAs substrates by low-pressure metalorganic chemical vapor deposition. Atomic force microscope images show that InAs QDs are aligned in one-dimensional rows along the [011]oriented bottom of V-grooves and no QDs are formed on the sidewalls and the surface of mesa top. Capability to grow one-dimensional InAs QDs array would feasible for the single electron tunneling devices and other novel quantum-confined devices.

투명전도성 Tin Oxide Film의 특성

지창섭,문탁진,최인훈,이덕열,Chang Sup Ji,Tak Jin Moon,In Hoon Choi,Dok Yol Lee 대한화학회 1987 대한화학회지 Vol.31 No.1

Some characteristics of $SnO_2$ film which was deposited on a slide glass substrate, using dibutyl tin diacetate and oxygen, by the chemical vapor deposition were observed. The optimum condition for the preparation of the film was found to be at 420$^{\circ}C$ of substrate temperature for 20 min of deposition. Important optical, electrical, and structural features of the film were examined. It was found that the typical $SnO_2$ film on the untreated substrate was 4000${\AA}$ in thickness, transmitted 90% of the visible liglit, and provided 5800 ohms/${\square}$ of the sheet resistance. It was also found that the surface treatments of the slide glass by acid leaching were beneficial. The film structure was found to be a mixture of polycrystalline tetragonal stannic oxide confirmed by the X-ray diffraction and to be spherical fine grains concluded by the scanning electron microscopy. 화학증착방법에 의해 dibutyl tin diacetate를 산소와 반응시켜 $SnO_2$박막을 slide glass에 증착시켜 각 조건에 형성된 $SnO_2$박막의 특성을 조사하였다. 본 연구에서 최적증착조건은 기판온도 420$^{\circ}C$, 증착시간 20분으로 나타났으며 증착속도는 증착시간이 증가함에 따라 증가하며 증착시간 25분이후에는 일정해졌으며 판저항의 값도 증착초기에는 감소하나 증착시간 20분이 지나면서 증가하였다. 증착온도 420$^{\circ}C$, 증착시간 20분에 형성된 박막은 두께 4000${\AA}$이며 가시광선 투과율이 90%이며 5800 ohms/${\square}$의 판저항을 가졌다. 그리고 산세척방법에 의해 표면처리한 기판과 반응기체중 수증기의 첨가는 더 좋은 특성의 투명전도성 $SnO_2$박막을 제조하는데 도움이됨을 알았다. 또한 증착막은 작은 구형의 입자들로 이루어져 있다는 것을 주사전자현미경으로 확인하였으며 X-선 회절 실험에 의해 rutile structure(tetragonal)를 갖는다는 것을 알 수 있었다.

연구논문 : 반도체 재료의 결정성 분석

서상희,송원준,금동화,임성욱,최인훈 ( Sang Hee Suh,Won Joon Sohng,Dong Hwa Kum,Sung Wook Lim,In Hoon Choi ) 대한금속재료학회 ( 구 대한금속학회 ) 1991 재료.물성 심포지엄 Vol.- No.-

RF Sputtering을 이용한 $Sr_2$$({Ta_{1-x}},{Nb_x})_2$)$O_7$ 박막의 성장 및 전기적 특성

인승진,최훈상,이관,최인훈,In, Seung-Jin,Choi, Hoon-Sang,Lee, Kwan,Choi, In-Hoon 한국재료학회 2001 한국재료학회지 Vol.11 No.5

RF magnetron sputtering 법으로 T $a_2$ $O_{5}$ 세라믹 타겟과 S $r_2$N $b_2$ $O_{7}$ 세라믹 타겟을 동시 sputtering하여 저유전율 S $r_2$(T $a_{1-x}$ , N $b_{x}$)$_2$ $O_{7}$(STNO) 박막을 p-type Si (100) 기판 위에 증착하여 NDRO 강유전체 메모리 (Non-destructive read out ferro-electric random access memory)에 사용되는 Pt/STNO/Si (MFS) 구조의 응용 가능성을 확인하였다. Sr$_2$Nb$_2$ $O_{7} (SN O)$ 타겟과 T $a_2$ $O_{5}$ 타겟의 출력의 비를 100w/100w, 70w/100w, 그리고 50w/100w로 조절하면서 x 값을 달리하여 조성을 변화시켰다. 성장된 박막을 8$50^{\circ}C$, 90$0^{\circ}C$, 그리고 9$50^{\circ}C$에서 1시간 동안 산소 분위기에서 열처리하였다. 조성과 열처리 온도에 따른 구조적 특징을 XRD에 의해 관찰하였으며 표면특성은 FE-SBM에 의해 관찰하였고, C-V 측정과 I-V 측정으로 박막의 전기적 특성을 조사하였다. SNO 타겟과 T $a_2$ $O_{5}$ 타켓의 출력비에 따른 STNO 박막의 성장 결과 70W/170W의 출력비에서 성장된 STNO박막에서 Ta의 양이 상대적 맡은 x=0.4였으며 가장 우수한 C-V 특성 및 누설 전류 특성을 보였다. 이 조성에서 성장된 STNO박막은 3-9V외 인가전압에서 메모리 윈도우 갑이 0.5-8.3V였고 누설전류밀도는 -6V의 인가전압에서 7.9$\times$10$_{-8}$A /$\textrm{cm}^2$였다. In this paper, theS $r_2$(T $a_{1-x}$ , N $b_{x}$)$_2$ $O_{7}$(STNO) films among ferroelectric materials having a low dielectric constant for metal-ferroelectric-semiconductor field effect transistor(MFS-FET) were discussed. The STNO thin films were deposited on p-type Si(100) at room temperature by co-sputtering with S $r_2$N $b_2$ $O_{7(SNO)}$ ceramic target and T $a_2$ $O_{5}$ ceramic target. The composition of STNO thin films was varied by adjusting the power ratios of SNO target and T $a_2$ $O_{5}$ target. The STNO films were annealed at 8$50^{\circ}C$, 90$0^{\circ}C$ and 9$50^{\circ}C$ temperature in oxygen ambient for 1 hour. The value of x has significantly influenced the structure and electrical properties of the STNO films. In the case of x= 0.4, the crystallinity of the STNO films annealed at 9$50^{\circ}C$ was observed well and the memory windows of the Pt/STNO/Si structure were 0.5-8.3 V at applied voltage of 3-9 V and leakage current density was 7.9$\times$10$_{08}$A/$\textrm{cm}^2$ at applied voltage of -5V.of -5V.V.V.

RF 마그네트론 스퍼터링법에 의해 증착된 SrBi$_2$$Nb_2$>$O_9$ 박막의 전기적 특성에 관한 연구

조금석,최훈상,이관,최인훈,Zhao, Jin-Shi,Choi, Hoon-Sang,Lee, Kwan,Choi, In-Hoon 한국재료학회 2001 한국재료학회지 Vol.11 No.4

세라믹 타겟인 Sr$_2$Nb$_2$O$_{7}$ (SNO)과 Bi$_2$O$_3$을 장착한 RF-마그네트론 스퍼터링을 이용하여 SrBi$_2$Nb$_2$O$_{9}$ (SBN) 박막을 p-type Si(100) 기판 위에 증착하였다. 증착시 두 타겟의 파워비를 조절하여 조성의 변화에 따른 SBN 박막의 구조적 및 전기적 특성을 조사하였다. 증착된 SBN 박막은 $700^{\circ}C$의 산소분위기에서 1시간 동안 열처리를 하였으며 상부전극으로 Pt를 증착한 후 산소분위기에서 30분 동안 $700^{\circ}C$에서 전극 후열처리를 실시하였다. 증착된 SBN 박막은 $700^{\circ}C$ 열터리 후에 페로브스카이트 상을 나타냈으며 SNO 타겟과 Bi$_2$O$_3$타겟의 파워가 120 W/100 W 일 때 가장 좋은 전기적 특성을 나타내었다. 이때의 조성은 EPMA(Electron Probe X-ray Micro Analyzer) 분석을 통하여 확인하였으며 Sr:Bi:Nb의 비가 약 1:3:2임을 나타내었다. 이러한 과잉의 Bi조성을 가진 SBN 박막은 3-9 V의 인가전압에서 1.8 V-6.3 V의 우수한 메모리 윈도우 값을 나타내었으며 누설전류 값은 인가전압 5 V에서 1.54$\times$$10^{-7}$ A/$\textrm{cm}^2$였다. The SrBi$_2$Nb$_2$O$_{9}$ (SBN) thin films were deposited on p-type(100) Si substrates by rf magnetron sputtering to confirm the Possibility of Pt/SBN/Si structure for the application of nondestructive read out ferroelectric random access memory (NDRO- FRAM). The SBN thin films were deposited by co-sputtering method with Sr$_2$Nb$_2$O$_{7}$ (SNO) and Bi$_2$O$_3$ ceramic targets. The SBN thin films deposited at room temperature were annealed at $700^{\circ}C$ for 1hr in $O_2$ ambient. The structural and electrical properties of SBN with different power ratios of targets were measured by x-ray diffraction(XRD), scanning electron microscopy(SEM), capacitance-voltage(C-V), and current-voltage(I-V). The C-V curves of the SBN films showed hysteresis curves of a clockwise rotation showing ferroelectricity. When the Power ratio of the SNO/Bi$_2$O$_3$ targets was 120 W/100 W, the SBN thin films had excellent electrical properties. The memory window of SBN thin film was 1.8 V-6.3 V at applied voltage of 3 V-9 V and the leakage current density was 1.5 $\times$ 10$^{-7}$ A/$\textrm{cm}^2$ at applied voltage of 5 V The composition of SBN thin films was analysed by electron probe X-ray micro analyzer(EPMA) and the atomic ratio of Sr:Bi:Nb with pawer ratio of 120 W/100 W was 1:3:2.

새로운 저온 열처리 공정으로 제조된 SrBi₂Ta₂O₉ 박막의 결정성 및 전기적 특성

이관,최훈상,장유민,최인훈,Lee, Kwan,Choi, Hoon-Sang,Jang, Yu-Min,Choi, In-Hoon 한국재료학회 2002 한국재료학회지 Vol.12 No.5

We studied growth and characterization of $SrBi_2Ta_2O_9$ (SBT) thin films fabricated by low temperature process under vacuum and/or oxygen ambient. A metal organic decomposition (MOD) method based on a spin-on technique and annealing process using a rapid thermal annealing (RTA) method was used to prepare the SBT films. The crystallinity of a ferroelectric phase of SBT thin films is related to the oxygen partial pressure during RTA process. Under an oxygen partial pressure higher than 30 Torr, the crystallization temperature inducing the ferroelectric SBT phase can be lowered to $650^{\circ}C$. Those films annealed at $650^{\circ}C$ in vacuum and oxygen ambient showed good ferroelectric properties, that is, the memory window of 0.5~0.9 V at applied voltage of 3~7 V and the leakage current density of 1.80{\times}10^{-8}$ A/$\textrm{cm}^2$ at an applied voltage of 5V. In comparison with the SBT thin films prepared at 80$0^{\circ}C$ in $O_2$ ambient by furnace annealing process, the SBT thin films prepared at $650^{\circ}C$ in vacuum and oxygen ambient using the RTA process showed a good crystallization and electrical properties which would be able to apply to the virtul device fabrication precess.

재료공학 ; 동시 스퍼터링법에 의한 Pb ( Fe0.5Nb0.5 ) O3 박막의 제조 및 특성 평가에 대한 연구

신동석(Dong Suk Shin),최인훈(In Hoon Choi),이상욱(Sang Uk Lee) 고려대학교 공학기술연구소 1997 공학논문집 Vol.35 No.1

N/A N/A

RF마그네트론 스퍼터링 법에 의해 증착된 SrBi₂Nb₂O₉ 박막의 Bi 량의 조절에 따른 특성분석

이종한,최훈상,성현주,임근식,권영석,최인훈,손창식,Lee, Jong-Han,Choi, Hoon-Sang,Sung, Hyun-Ju,Lim, Geun-Sik,Kwon, Young-Suk,Choi, In-Hoon,Son, Chang-Sik 한국재료학회 2002 한국재료학회지 Vol.12 No.12

The $SrBi_2$$Nb_2$$O_{9}$ (SBN) thin films were deposited with $SrNb_2$$O_{6}$ / (SNO) and $Bi_2$$O_3$ targets by co-sputtering method. For the growth of SBN thin films, we adopted the various power ratios of two targets; the power ratios of the SNO target to $Bi_2$$O_3$ target were 100 W : 20 W, 100 W : 25 W, and 100 W : 30 W during sputtering the SBN films. We found that the electrical properties of SBN films were greatly dependent on Bi content in films. The $Bi_2$Pt and $Bi_2$$O_3$ phase as second phases occurred at the films with excess Bi content greater than 2.4, resulting in poor ferroelectric properties. The best growth condition of the SBN films was obtained at the power ratio of 100 W : 25 W for the two targets. At this condition, the crystallinity and electrical properties of the films were improved at even low annealing temperature as $700^{\circ}C$ for 1h in oxygen ambient and the Sr, Bi and Nb component in the SBN films were about 0.9, 2.4, and 1.8 respectively. From the P-E and I-V curves for the specimen, the remnant polarization value ($2P_{r}$) of the SBN films was obtained about 6 $\mu$C/c $m^2$ at 250 kV/cm and the leakage current density of this thin film was $2.45$\times$10^{-7}$ $A/cm^2$ at an applied voltage of 3 V.V.

단일 공정에 의한 고효율 단일모드 반도체 레이저 구조 제작을 위한 고밀도 양자 나노구조 형성

손창식,백종협,김성일,박용주,김용태,최훈상,최인훈,Son, Chang-Sik,Baek, Jong-Hyeob,Kim, Seong-Il,Park, Young-Ju,Kim, Yong-Tae,Choi, Hoon-Sang,Choi, In-Hoon 한국재료학회 2003 한국재료학회지 Vol.13 No.8

We have developed a new way of the constant growth technique to maintain a grating height of originally-etched V-groove of submicron gratings up to 1.5 $\mu\textrm{m}$ thickness by a low pressure metalorganic chemical vapor deposition. The constant growth technique is well performed on two kinds of submicron gratings that made by holography and electron (e)-beam lithography GaAs buffer layer grown on thermally deformed submicron gratings has an important role in recovering the deformed grating profile from sinusoidal to V-shaped by reducing mass transport effects. The thermal deformation effect on submicron gratings made by e-beam lithography is less than that on submicron gratings made by holography. The constant growth technique is an important step to realize complex optoelectronic devices such as one-step grown distributed feedback lasers and two-dimensional photonic crystals.