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VPE 법에 의한 GaAs Epilayer 의 성장조건에 관한 연구
최인훈,이승무,서상희,장태용,송원준 고려대학교 공학기술연구소 1993 고려대학교 생산기술연구소 생기연논문집 Vol.29 No.1
The growth of an epitaxial layer on a GaAs substrate was carried out by the system of Ga/AsCl₃/H₂. To establish optimum growth parameters, thermodynamic analysis was made first and the result was compared with the experimental one. Among many parameters, the mole fraction of AsCl₃ in H₂ and the flow rate of carrier gas were variable and the other parameters, such as source and seed temperature, temperature gradient, substrate orientation, reaction time and reactor pressure, were fixed during the experiment. A little difference was found between the growth rate analized by a simple thermodynamic model and that measured from the experiment. From the results, as a flow rate of carrier gas increased, the rate-determining step was changed from mass-input-limited step to kinetic-limited step. Surface morphologies were not affected by both the flow rate and the change of mole fraction.