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유전체 멤브레인에 의해 열차단된 비냉각 초전형 박막 $(Ba,Sr)TiO_3$적외선 검지기
고성용,장철영,김동전,김진섭,이재신,이정희,한석용,이용현,Go, Seong-Yong,Jang, Cheol-Yeong,Kim, Dong-Jeon,Kim, Jin-Seop,Lee, Jae-Sin,Lee, Jeong-Hui,Han, Seok-Yong,Lee, Yong-Hyeon 대한전자공학회 2001 電子工學會論文誌-SD (Semiconductor and devices) Vol.38 No.3
Si₃N₄/SiO₂/Si₃N₄ 멤브레인에 의해 실리콘 기판으로부터 열차단된 비냉각 초전형 박막 (Ba,Sr)TiO₃ 적외선 검지기를 제작하고, 적외선 검지기의 특성을 논의하였다. 25℃의 공기중에서 쵸핑주파수가 1 ㎐일 때 적외선 검지기는 약 168.8 V/W의 비교적 높은 전압 감응도를 나타내었으나, 매우 작은 신호대잡음비 때문에 약 2.6×10⁴㎝·㎐/sup 1/2//W의 낮은 비검지도를 나타내었다. 또한 출력파형의 쵸핑주파수 및 온도 의존성에 대한 정성적인 해석으로부터 적외선 검지기의 열잡음전압 및 열시정수가 모두 상당히 크다는 것을 알 수 있었다. Uncooled pyroelectric thin-film (Ba,Sr)TiO$_3$ infrared detectors thermally isolated from Si-substrate by Si$_3$N$_4$/SiO$_2$/Si$_3$N$_4$-membrane have been fabricated, and figures of merit for detectors were examined. The detector at $25^{\circ}C$ in air showed relatively high voltage responsivity of about 168.8 V/W and low specific detectivity of about 2.6$\times$10$^4$cm.Hz$^{1}$2//W at 1 Hz-chopping frequency because of very small signal-to-noise voltage ratio. It could be found that both thermal noise voltage and thermal time constant of the detector were very large by analyzing dependences of output waveforms on chopping frequency and temperature.
RF Magnetron Sputter 를 이용하여 증착한 AIN 박막의 특성
이용현,고성용,장철영,조인호 경북대학교 전자기술연구소 2001 電子技術硏究誌 Vol.22 No.2
Aluminum nitride(A1N) thin films were deposited on silicon substrates by RF magnetron sputtering at various deposition conditions. The characteristic of AIN thin film were investigated by XRD, AES, HP-4145B semiconductor parameter analyzes, and HP-4280 C-V measurement and so on. There are measured for XRD patterns as deposition temperatures, and for AES depth profile to study the analysis of the compositions. In I-V measurements, leakage currents per unit area were in the range from a few pA to several tens μA, and in C-V measurements, C_(max) and C_(min) were 275 pF and 18 pF, respectively. There were 100 W of RF power, 200℃ of substrate temperature and 15 mTorr of working pressure of the deposition conditions for the good c-axis orientation.