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2P-453 Fabrication of CZTSSe thin film solar cells
손대호,심준형,김영일,김승현,양기정,강진규,김대환 한국공업화학회 2017 한국공업화학회 연구논문 초록집 Vol.2017 No.1
CZTSSe thin films and devices have been prepared by a wide variety of techniques. Additionally, many methods have been employed with use of either metal or sulfur compound precursors. In nearly all cases a high-temperature process is used to react the precursors to form CZTSSe and improve crystalline quality of the films. However, there exists the possibility for loss of volatile components such as metallic Zn and Sn-Se at high-temperature annealing process of selenization. It is important to sufficiently anneal the thin films for high crystalline quality grains, but also to limit the detrimental effects of elemental loss. This study presents a detailed insight into the phase formation processes of CZTSe during the selenization of metal precursor. We also investigate the influence of annealing and precursor condition on CZTSSe film properties. <sup>**</sup>This work was supported by by the DGIST R&D Program of the Ministry of Science and ICT (17-BD-05).
텍스트마이닝 기법을 활용한 장애유아 통합교육에 관한 토픽 분석
손대호 인문사회 21 2023 인문사회 21 Vol.14 No.3
The purpose of this study is to use text mining techniques to explore keywords and topics related to inclusive education for children with disabilities. To achieve this goal, data was collected from Textom and keyword analysis and topic modeling analysis were conducted. The results of the study show that education, disability, children, teachers, special education, and education were identified as major keywords through keyword analysis. Next, through topic modeling analysis, education, purpose, subject, program, qualification, individualization, welfare, treatment, research, and training were identified as major topics. Through these results, we aim to broaden the understanding of inclusive education for children with disabilities and provide implications for future policies and systems by analyzing related policies from various perspectives.
SnS 및 ZnS 화합물 전구체를 이용한 CZTSSe 박막 태양전지 제작과 특성 연구
손대호,김승현,김영일,양기정,김대환,강진규 한국공업화학회 2019 한국공업화학회 연구논문 초록집 Vol.2019 No.1
최근 화합물 박막 태양전지 연구가 활발히 일어나고 있으며, 다양한 박막 물질이 개발되고 있다. 여러 물질 중 Cu<sub>2</sub>ZnSn(S,Se)<sub>4</sub> (CZTSSe) 박막은 높은 광흡수율의 특성과 풍부한 매장량으로 각광받고 있는 물질 중 하나이다. 본 연구에서는 순수 금속 Cu와 황 화합물 SnS, ZnS 물질을 전구체로 사용하여 CZTSSe 박막과 태양전지 소자를 제작하였다. 또한 열처리 공정시 SeS<sub>2</sub>/Se 양에 따라 CZTSSe 박막내의 S/Se 성분비 조절을 하였으며, 이에 따라 제작한 박막과 소자 특성을 확인하였다. <sup>**</sup> This work is supported by the DGIST R&D Programs of the Ministry of Science, ICT & Future Planning of Korea (19-BD-05)
손대호,김영일,김대환,심준형,김정식,박시내,양기정,강진규 한국공업화학회 2014 한국공업화학회 연구논문 초록집 Vol.2014 No.1
The technological advance of CZTS via evaporation process and Cu<sub>2</sub>ZnSnSe<sub>4</sub> (CZTSe) solar cells have reached efficiencies up to 8.4% and 10.1%, respectively. Cu<sub>2</sub>ZnSn(S,Se)<sub>4</sub> (CZTSSe), also commonly referred to as kesterites, is of particular interest due to the achievement of 11.1% efficiency using a non-vacuum, hydrazine based deposition process. These research results demonstrate CZTS based solar cells are currently the most promising materials to replace the Cu(InGa)Se<sub>2</sub> absorbers in photovoltaic devices. Almost all of the aforementioned deposition techniques involve two steps. First, metal containing precursors with or without chalcogen addition are deposited, and second, the precursors are annealed under optimized conditions in a sulfur/selenium containing atmosphere to yield the final kesterite phase. In this respect, the knowledge of the formation and conversion reactions that occur during the annealing step is essential for obtaining phase-pure CZTS(Se) absorbers with targeted metal ratios. The reaction paths during selenization depend on annealing conditions and on the initial precursor, which can be either a stack of Cu, Zn, and Sn containing layers or a homogeneous mixture of all metals with or without chalcogen elements. This study presents a detailed insight into the phase formation processes of CZTSSe during the selenization of metal compound precursors. Several complementary characterization techniques are employed to identify intermediate phases. We also investigate the influence of annealing condition on CZTSSe film properties and solar cell performance, keeping the selenization process the same for all samples
황화 화합물 전구체를 이용한 CZTSSe 박막 태양전지 제작과 특성 연구
손대호,김승현,김영일,양기정,김대환,강진규 한국공업화학회 2020 한국공업화학회 연구논문 초록집 Vol.2020 No.-
최근 CZTS 계 화합물 박막 태양전지 연구가 활발히 일어나고 있으며, 다양한 공정 방법을 이용하여 제작되고 있다. CZTS 계 광흡수층 박막은 높은 광흡수율의 특성과 저가 및 무독성의 원소로 구성되어 차세대 박막 태양전지 물질로 각광받고 있다. 본 연구에서는 순수 금속 Cu와 황화 화합물 ZnS 및 SnS를 전구체로 이용하여 CZTSSe 박막과 태양전지 소자를 제작하였다. 순수 셀렌화 공정과 황-셀렌화 공정 조건에 따라 CZTSSe 박막을 제작하였으며, 공정 조건 변수를 변화 시켜 최적의 광흡수층을 제작하고 그 특성을 확인하였다. 또한 칼코젠 원소에 따라 변화되는 전기적 특성을 확인하였으며, 이를 통하여 9%대의 효율을 확보하였다.
쇼트키 장벽 관통 트랜지스터 구조를 적용한 실리콘 나노점 부유 게이트 비휘발성 메모리 특성
손대호,김은겸,김정호,이경수,임태경,안승만,원성환,석중현,홍완식,김태엽,장문규,박경완,Son, Dae-Ho,Kim, Eun-Kyeom,Kim, Jeong-Ho,Lee, Kyung-Su,Yim, Tae-Kyung,An, Seung-Man,Won, Sung-Hwan,Sok, Jung-Hyun,Hong, Wan-Shick,Kim, Tae-You,Jang, Moo 한국진공학회 2009 Applied Science and Convergence Technology Vol.18 No.4
쇼트키 장벽 관통 트랜지스터에 실리콘 나노점을 부유 게이트로 사용하는 비휘발성 메모리 소자를 제작하였다. 소스/드레인 영역에 어븀 실리사이드를 형성하여 쇼트키 장벽을 생성하였으며, 디지털 가스 주입의 저압 화학 기상 증착법으로 실리콘 나노점을 형성하여 부유 게이트로 이용하였다. 쇼트키 장벽 관통 트랜지스터의 동작 상태를 확인하였으며, 게이트 전압의 크기 및 걸어준 시간에 따른 트랜지스터의 문턱전압의 이동을 관찰함으로써 비휘발성 메모리 특성을 측정하였다. 초기 ${\pm}20\;V$의 쓰기/지우기 동작에 따른 메모리 창의 크기는 ${\sim}5\;V$ 이었으며, 나노점에 충분한 전하 충전을 위한 동작 시간은 10/50 msec 이었다. 그러나 메모리 창의 크기는 일정 시간이 지난 후에 0.4 V로 감소하였다. 이러한 메모리 창의 감소 원인을 어븀 확산에 따른 결과로 설명하였다. 본 메모리 소자는 비교적 안정한 쓰기/지우기 내구성을 보여주었으나, 지속적인 쓰기/지우기 동작에 따라 수 V의 문턱전압 이동과 메모리 창의 감소를 보여주었다. 본 실험 결과를 가지고 실리콘 나노점 부유게이트가 쇼트키 장벽 트랜지스터 구조에 접목 가능하여 초미세 비휘발성 메모리 소자로 개발 가능함을 확인하였다. We fabricated a Si nano floating gate memory with Schottky barrier tunneling transistor structure. The device was consisted of Schottky barriers of Er-silicide at source/drain and Si nanoclusters in the gate stack formed by LPCVD-digital gas feeding method. Transistor operations due to the Schottky barrier tunneling were observed under small gate bias < 2V. The nonvolatile memory properties were investigated by measuring the threshold voltage shift along the gate bias voltage and time. We obtained the 10/50 mseconds for write/erase times and the memory window of $\sim5V$ under ${\pm}20\;V$ write/erase voltages. However, the memory window decreased to 0.4V after 104seconds, which was attributed to the Er-related defects in the tunneling oxide layer. Good write/erase endurance was maintained until $10^3$ write/erase times. However, the threshold voltages moved upward, and the memory window became small after more write/erase operations. Defects in the LPCVD control oxide were discussed for the endurance results. The experimental results point to the possibility of a Si nano floating gate memory with Schottky barrier tunneling transistor structure for Si nanoscale nonvolatile memory device.
Fabrication of the high efficiency CZTSSe solar cell from pure metal precursor
손대호,김영일,양기정,김승현,김대환,강진규 한국공업화학회 2018 한국공업화학회 연구논문 초록집 Vol.2018 No.0
Kesterite Cu<sub>2</sub>ZnSn(S,Se)<sub>4</sub> (CZTSSe) photovoltaics have received considerable attention in recent years. The CZTSSe thin films are grown by different techniques such as sputtering and solution process. More or less similar techniques are employed to grow CZTSSe thin films. All the grown metal or compound stacks are sulfurized or selenizied under S or Se atmosphere to obtain high quality thin films for solar cell application. In this research, solar cells with a metal and a chalcogenide stack structure as a light absorbing precursor layer of CZTSSe were studied. The prepared materials are characterized using SEM, XRD, Raman and solar simulator. The optimum annealing temperature using metal precursor is lower than that using chalcogenide precursor due to the different reaction mechanism. <sup>**</sup> This work is supported by by the DGIST R & D Programs of the Ministry of Science, ICT & Future Planning of Korea (18-BD-05).