http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
FN-tunneling-current Modeling in a Recessed-channel Structure
Kim, Young Kwon,Park, Taesik,Lee, Jin Sung,Kim, Geon,Kim, Hui Jung,Cho, Young Pyo,Park, Young June,Lee, Myoung Jin The Institute of Electronics and Information Engin 2017 Journal of semiconductor technology and science Vol.17 No.5
The FN-tunneling gate-current model for the three-dimensional recessed-channel structure including a geometrical effect is obtained. Further, the measurement results in the fabricated 60-nm DRAM chip are well fitted using our modeled simulation results in consideration of the cylindrical coordinate and the poly-depletion effect. As the recessed structure was scaled down to sub-50-nm technology with a very thin oxide thickness and a small radius, for which the reliability issues were considered, the geometrical effect seriously affected the memory-sensing margin. Our model presents a sound solution for the attainment of a fast and accurate FN-tunneling gate current to resolve the reliability issues of memory-cell transistors.
FN-tunneling-current Modeling in a Recessed-channel Structure
김영권,박태식,이진성,김건,김희정,조영표,박영준,이명진 대한전자공학회 2017 Journal of semiconductor technology and science Vol.17 No.5
The FN-tunneling gate-current model for the three-dimensional recessed-channel structure including a geometrical effect is obtained. Further, the measurement results in the fabricated 60-nm DRAM chip are well fitted using our modeled simulation results in consideration of the cylindrical coordinate and the poly-depletion effect. As the recessed structure was scaled down to sub-50-nm technology with a very thin oxide thickness and a small radius, for which the reliability issues were considered, the geometrical effect seriously affected the memory-sensing margin. Our model presents a sound solution for the attainment of a fast and accurate FN-tunneling gate current to resolve the reliability issues of memory-cell transistors.
FN-tunneling-current Modeling in a Recessed-channel Structure
Young Kwon Kim,Taesik Park,Jin Sung Lee,Geon Kim,Hui Jung Kim,Young Pyo Cho,Young June Park,Myoung Jin Lee 대한전자공학회 2017 Journal of semiconductor technology and science Vol.17 No.5
The FN-tunneling gate-current model for the three-dimensional recessed-channel structure including a geometrical effect is obtained. Further, the measurement results in the fabricated 60-nm DRAM chip are well fitted using our modeled simulation results in consideration of the cylindrical coordinate and the poly-depletion effect. As the recessed structure was scaled down to sub-50-nm technology with a very thin oxide thickness and a small radius, for which the reliability issues were considered, the geometrical effect seriously affected the memory-sensing margin. Our model presents a sound solution for the attainment of a fast and accurate FN-tunneling gate current to resolve the reliability issues of memory-cell transistors.
Sayan Bayan,Dambarudhar Mohanta 한국물리학회 2013 Current Applied Physics Vol.13 No.4
We demonstrate significant FowlereNordheim (FN) tunneling across Al/Al2O3/ZnO metaleinsulator esemiconductor (MIS) and Ag/ZnO metalesemiconductor (MS) nanojunctions. The transport properties of ZnOnanostructures in the form of urchins and randomly distributed nanorods were investigated in terms of various conduction mechanism. The minimum voltage necessary for triggering FowlereNordheim (FN)tunneling, under forward biasing,wasw1.2 V andw3.4 V; respectively, below which only direct tunneling and thermionic emission events were evident. Mediated through Al2O3 layer, the FN tunneling was more prominent across MIS junction than MS one. The weak FN tunneling across MS junction was owing to interfacial charge transfer process through the atomic scale gapping between adjacent nanostructures. The extent of such type of tunneling is found to be nanostructure morphology dependent and largely rely on the free electrons donated by the native donor defects in the crystal structure of ZnO. The significant FN tunneling across the MIS and MS junctions has a direct relevance in designing nanoscale field emission devices/components working at low voltage with high throughputs.
단일층 다결정 실리콘 플래시 메모리 소자의 FN 터너링 프로그램 및 소거 특성 분석
이재봉 충북대학교 컴퓨터정보통신연구소 2008 컴퓨터정보통신연구 Vol.16 No.1
In this paper, the results of the analysis of the FN(Folwer-Nordheim) tunneling program and erase of a new single-polycrystalline-silicon flash EEPROM have been discussed. The measured program and erase characteristics are found to be excellent, where the program and erase times are 1mS and 0.3 mS, respectively. In addition, no program or no erase disturb has been found. Furthermore. it has been found that the device has excellent endurance characteristics up to 1,000 cycles and super data retention characteristics for 100 hours at 200℃. Therefore, it is believed that the possibility of its use as a good embedded memory in the future is clearly confirmed.
Reverse Bias Leakage Current Mechanism of AlGaN/InGaN/GaN Heterostructure
Apurba Chakraborty,Saptarsi Ghosh,Partha Mukhopadhyay,Sanjay K. Jana,Syed Mukulika Dinara,Ankush Bag,Mihir K. Mahata,Rahul Kumar,Subhashis Das,Palash Das,Dhrubes Biswas 대한금속·재료학회 2016 ELECTRONIC MATERIALS LETTERS Vol.12 No.2
The reverse bias leakage current mechanism of AlGaN/InGaN/GaNheterostructure is investigated by current-voltage measurement intemperature range from 298 K to 423 K. The Higher electric field acrossthe AlGaN barrier layer of AlGaN/InGaN/GaN double heterostructuredue to higher polarization charge is found to be responsible for strongFowler-Nordheim (FN) tunnelling in the electric field higher than3.66 MV/cm. For electric field less than 3.56 MV/cm, the reverse biasleakage current is also found to follow the trap assisted Frenkel-Poole(FP) emission in low negative bias region. Analysis of reverse FPemission yielded the barrier height of trap energy level of 0.34 eV withrespect to Fermi level.
A Study on the Leakage Current Voltage of Hybrid Type Thin Films Using a Dilute OTS Solution
Kim Hong-Bae,Oh Teresa The Korean Society Of Semiconductor Display Techno 2006 반도체디스플레이기술학회지 Vol.5 No.1
To improve the performance of organic thin film transistor, we investigated the properties of gate insulator's surface according to the leakage current by I-V measurement. The surface was treated by the dilute n-octadecyltrichlorosilane solution. The alkyl group of n-octadecyltrichlorosilane induced the electron tunneling and the electron tunneling current caused the breakdown at high electric field, consequently shifting the breakdown voltage. The 0.5% sample with an electron-rich group was found to have a large leakage current and a low barrier height because of the effect of an energy barrier lowered by, thermionic current, which is called the Schottky contact. The surface properties of the insulator were analyzed by I-V measurement using the effect of Poole-Frankel emission.
K. Pramod,R.B. Gangineni 한국물리학회 2017 Current Applied Physics Vol.17 No.11
The electron transport through b phase dominant Polyvinylidene fluoride (PVDF) thin films in its intrinsic form is investigated and reports the stable rectification up to ±30 V in Ag/PVDF/Au capacitor structures. A practical resistance ratio of ~40 between 1 V and 1 V and a maximum ratio of ~77 at 24 V and 24 V exhibits its potential usage in selector devices. Furthermore, the nonpolar electronic transport is analysed with Schottky, Space Charge Limited Current (SCLC), Poole-Frenkel (PF) and Fowler-Nordheim (FN) tunneling mechanisms with respect to electrode, thickness and temperature variations.
Evidence for the changes in hole injection mechanism with a CoPc hole injection layer
신동근,이재현,이현복,이혜인,이연진 한국물리학회 2014 Current Applied Physics Vol.14 No.5
The hole injection in hole-only devices with the structures of Al/N,N0-bis(1-naphthyle)-N,N0-diphenyl- 1,10-biphenyl-4,40-diamine (NPB)/ITO and Al/NPB/cobalt phthalocyanine (CoPc)/ITO were analyzed. With the combined analysis of current densityevoltage and impedance measurement, the charge injection mechanism based on the injection limited current model was investigated. The NPB single layer device shows RichardsoneSchottky type thermionic emission in the entire applied bias range. On the other hand, the device with the CoPc hole injection layer shows thermionic emission until the applied bias reaches 3.7 V. Increasing the bias further, FowlereNordheim tunneling dominates the charge injection. The changes of hole injection mechanism were discussed by evaluating the energy level changes with internal field distributions.